Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
Authors:
Róbert Németh,
Vatsal K. Bandaru,
Pedro Alves,
Merritt P. Losert,
Emma Brann,
Owen M. Eskandari,
Hudaiba Soomro,
Avani Vivrekar,
M. A. Eriksson,
Mark Friesen
Abstract:
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter regions of low conduction-band valley energy splittings, due to the presence of random-alloy disorder in Si/SiGe quantum wells. Here, we theoretically explore tw…
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Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter regions of low conduction-band valley energy splittings, due to the presence of random-alloy disorder in Si/SiGe quantum wells. Here, we theoretically explore two schemes for avoiding valley-state excitations at these valley-splitting minima, by allowing the electrons to detour around them. A multichannel shuttling scheme allows electrons to tunnel between parallel channels, while a two-dimensional (2D) shuttler provides full omnidirectional control. Using simulations, we estimate shuttling fidelities in these two schemes, obtaining a clear preference for the 2D shuttler. Based on such encouraging results, we propose a full qubit architecture based on 2D shuttling, which enables all-to-all connectivity within qubit plaquettes and high-fidelity communication between different plaquettes.
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Submitted 10 May, 2025; v1 submitted 12 December, 2024;
originally announced December 2024.
