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A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
Authors:
Wee Han Lim,
Tuomo Tanttu,
Tony Youn,
Jonathan Yue Huang,
Santiago Serrano,
Alexandra Dickie,
Steve Yianni,
Fay E. Hudson,
Christopher C. Escott,
Chih Hwan Yang,
Arne Laucht,
Andre Saraiva,
Kok Wai Chan,
Jesús D. Cifuentes,
Andrew S. Dzurak
Abstract:
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial fabrication challenges, particularly because enabling control of nearest-neighbor entanglement requires the incorporation of interstitial exchange gates between…
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Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial fabrication challenges, particularly because enabling control of nearest-neighbor entanglement requires the incorporation of interstitial exchange gates between quantum dots in the qubit architecture. In this work, we present a 2D array of silicon metal-oxide-semiconductor (MOS) quantum dots with tunable interdot coupling between all adjacent dots. The device is characterized at 4.2 K, where we demonstrate the formation and isolation of double-dot and triple-dot configurations. We show control of all nearest-neighbor tunnel couplings spanning up to 30 decades per volt through the interstitial exchange gates and use advanced modeling tools to estimate the exchange interactions that could be realized among qubits in this architecture. These results represent a significant step towards the development of 2D MOS quantum processors compatible with foundry manufacturing techniques.
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Submitted 10 December, 2024; v1 submitted 21 November, 2024;
originally announced November 2024.
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A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Authors:
Paul Steinacker,
Nard Dumoulin Stuyck,
Wee Han Lim,
Tuomo Tanttu,
MengKe Feng,
Andreas Nickl,
Santiago Serrano,
Marco Candido,
Jesus D. Cifuentes,
Fay E. Hudson,
Kok Wai Chan,
Stefan Kubicek,
Julien Jussot,
Yann Canvel,
Sofie Beyne,
Yosuke Shimura,
Roger Loo,
Clement Godfrin,
Bart Raes,
Sylvain Baudot,
Danny Wan,
Arne Laucht,
Chih Hwan Yang,
Andre Saraiva,
Christopher C. Escott
, et al. (2 additional authors not shown)
Abstract:
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including si…
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Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including single- and two-qubit control fidelities exceed 99% and state preparation and measurement fidelity exceeds 99.9%, as evidenced by gate set tomography (GST). We report coherence and lifetimes up to $T_\mathrm{2}^{\mathrm{*}} = 30.4$ $μ$s, $T_\mathrm{2}^{\mathrm{Hahn}} = 803$ $μ$s, and $T_1 = 6.3$ s. Crucially, the dominant operational errors originate from residual nuclear spin carrying isotopes, solvable with further isotopic purification, rather than charge noise arising from the dielectric environment. Our results answer the longstanding question whether the favourable properties including high-fidelity operation and long coherence times can be preserved when transitioning from a tailored academic to an industrial semiconductor fabrication technology.
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Submitted 25 October, 2024; v1 submitted 20 October, 2024;
originally announced October 2024.
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CMOS compatibility of semiconductor spin qubits
Authors:
Nard Dumoulin Stuyck,
Andre Saraiva,
Will Gilbert,
Jesus Cifuentes Pardo,
Ruoyu Li,
Christopher C. Escott,
Kristiaan De Greve,
Sorin Voinigescu,
David J. Reilly,
Andrew S. Dzurak
Abstract:
Several domains of society will be disrupted once millions of high-quality qubits can be brought together to perform fault-tolerant quantum computing (FTQC). All quantum computing hardware available today is many orders of magnitude removed from the requirements for FTQC. The intimidating challenges associated with integrating such complex systems have already been addressed by the semiconductor i…
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Several domains of society will be disrupted once millions of high-quality qubits can be brought together to perform fault-tolerant quantum computing (FTQC). All quantum computing hardware available today is many orders of magnitude removed from the requirements for FTQC. The intimidating challenges associated with integrating such complex systems have already been addressed by the semiconductor industry -hence many qubit makers have retrofitted their technology to be CMOS-compatible. This compatibility, however, can have varying degrees ranging from the mere ability to fabricate qubits using a silicon wafer as a substrate, all the way to the co-integration of qubits with high-yield, low-power advanced electronics to control these qubits. Extrapolating the evolution of quantum processors to future systems, semiconductor spin qubits have unique advantages in this respect, making them one of the most serious contenders for large-scale FTQC. In this review, we focus on the overlap between state-of-the-art semiconductor spin qubit systems and CMOS industry Very Large-Scale Integration (VLSI) principles. We identify the main differences in spin qubit operation, material, and system requirements compared to well-established CMOS industry practices. As key players in the field are looking to collaborate with CMOS industry partners, this review serves to accelerate R&D towards the industrial scale production of FTQC processors.
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Submitted 5 September, 2024;
originally announced September 2024.
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Violating Bell's inequality in gate-defined quantum dots
Authors:
Paul Steinacker,
Tuomo Tanttu,
Wee Han Lim,
Nard Dumoulin Stuyck,
MengKe Feng,
Santiago Serrano,
Ensar Vahapoglu,
Rocky Y. Su,
Jonathan Y. Huang,
Cameron Jones,
Kohei M. Itoh,
Fay E. Hudson,
Christopher C. Escott,
Andrea Morello,
Andre Saraiva,
Chih Hwan Yang,
Andrew S. Dzurak,
Arne Laucht
Abstract:
Superior computational power promised by quantum computers utilises the fundamental quantum mechanical principle of entanglement. However, achieving entanglement and verifying that the generated state does not follow the principle of local causality has proven difficult for spin qubits in gate-defined quantum dots, as it requires simultaneously high concurrence values and readout fidelities to bre…
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Superior computational power promised by quantum computers utilises the fundamental quantum mechanical principle of entanglement. However, achieving entanglement and verifying that the generated state does not follow the principle of local causality has proven difficult for spin qubits in gate-defined quantum dots, as it requires simultaneously high concurrence values and readout fidelities to break the classical bound imposed by Bell's inequality. Here we employ heralded initialization and calibration via gate set tomography (GST), to reduce all relevant errors and push the fidelities of the full 2-qubit gate set above 99 %, including state preparation and measurement (SPAM). We demonstrate a 97.17 % Bell state fidelity without correcting for readout errors and violate Bell's inequality with a Bell signal of S = 2.731 close to the theoretical maximum of $2\sqrt{2}$. Our measurements exceed the classical limit even at elevated temperatures of 1.1 K or entanglement lifetimes of 100 $μs$.
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Submitted 16 August, 2024; v1 submitted 22 July, 2024;
originally announced July 2024.
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Spin Qubits with Scalable milli-kelvin CMOS Control
Authors:
Samuel K. Bartee,
Will Gilbert,
Kun Zuo,
Kushal Das,
Tuomo Tanttu,
Chih Hwan Yang,
Nard Dumoulin Stuyck,
Sebastian J. Pauka,
Rocky Y. Su,
Wee Han Lim,
Santiago Serrano,
Christopher C. Escott,
Fay E. Hudson,
Kohei M. Itoh,
Arne Laucht,
Andrew S. Dzurak,
David J. Reilly
Abstract:
A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control lines however, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware.…
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A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control lines however, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware. A promising solution is to co-locate the control system proximal to the qubit platform at milli-kelvin temperatures, wired-up via miniaturized interconnects. Even so, heat and crosstalk from closely integrated control have potential to degrade qubit performance, particularly for two-qubit entangling gates based on exchange coupling that are sensitive to electrical noise. Here, we benchmark silicon MOS-style electron spin qubits controlled via heterogeneously-integrated cryo-CMOS circuits with a low enough power density to enable scale-up. Demonstrating that cryo-CMOS can efficiently enable universal logic operations for spin qubits, we go on to show that mill-kelvin control has little impact on the performance of single- and two-qubit gates. Given the complexity of our milli-kelvin CMOS platform, with some 100-thousand transistors, these results open the prospect of scalable control based on the tight packaging of spin qubits with a chiplet style control architecture.
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Submitted 21 July, 2024;
originally announced July 2024.
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Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
Authors:
Jesus D. Cifuentes,
Tuomo Tanttu,
Paul Steinacker,
Santiago Serrano,
Ingvild Hansen,
James P. Slack-Smith,
Will Gilbert,
Jonathan Y. Huang,
Ensar Vahapoglu,
Ross C. C. Leon,
Nard Dumoulin Stuyck,
Kohei Itoh,
Nikolay Abrosimov,
Hans-Joachim Pohl,
Michael Thewalt,
Arne Laucht,
Chih Hwan Yang,
Christopher C. Escott,
Fay E. Hudson,
Wee Han Lim,
Rajib Rahman,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electros…
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Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology.
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Submitted 4 September, 2023;
originally announced September 2023.
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High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
Authors:
Jonathan Y. Huang,
Rocky Y. Su,
Wee Han Lim,
MengKe Feng,
Barnaby van Straaten,
Brandon Severin,
Will Gilbert,
Nard Dumoulin Stuyck,
Tuomo Tanttu,
Santiago Serrano,
Jesus D. Cifuentes,
Ingvild Hansen,
Amanda E. Seedhouse,
Ensar Vahapoglu,
Nikolay V. Abrosimov,
Hans-Joachim Pohl,
Michael L. W. Thewalt,
Fay E. Hudson,
Christopher C. Escott,
Natalia Ares,
Stephen D. Bartlett,
Andrea Morello,
Andre Saraiva,
Arne Laucht,
Andrew S. Dzurak
, et al. (1 additional authors not shown)
Abstract:
The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures…
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The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 kelvin, where the cooling power is orders of magnitude higher. Here, we tune up and operate spin qubits in silicon above 1 kelvin, with fidelities in the range required for fault-tolerant operation at such temperatures. We design an algorithmic initialisation protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies, and incorporate radio-frequency readout to achieve fidelities up to 99.34 per cent for both readout and initialisation. Importantly, we demonstrate a single-qubit Clifford gate fidelity of 99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for high-fidelity operation to be possible, surmounting a major obstacle in the pathway to scalable and fault-tolerant quantum computation.
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Submitted 18 August, 2023; v1 submitted 3 August, 2023;
originally announced August 2023.
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Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations
Authors:
Santiago Serrano,
MengKe Feng,
Wee Han Lim,
Amanda E. Seedhouse,
Tuomo Tanttu,
Will Gilbert,
Christopher C. Escott,
Nikolay V. Abrosimov,
Hans-Joachim Pohl,
Michael L. W. Thewalt,
Fay E. Hudson,
Andre Saraiva,
Andrew S. Dzurak,
Arne Laucht
Abstract:
High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we pr…
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High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits.
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Submitted 15 July, 2023;
originally announced July 2023.
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Path integral simulation of exchange interactions in CMOS spin qubits
Authors:
Jesús D. Cifuentes,
Philip Y. Mai,
Frédéric Schlattner,
H. Ekmel Ercan,
MengKe Feng,
Christopher C. Escott,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interaction…
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The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interactions of three-dimensional electrically defined quantum dots. We apply this model to silicon metal-oxide-semiconductor (MOS) devices and we benchmark our method against well-tested full configuration interaction (FCI) simulations. As an application, we study the impact of a single charge trap on two exchanging dots, opening the possibility of using this code to test the tolerance to disorder of CMOS devices. This algorithm provides an accurate description of this system, setting up an initial step to integrate PIMC algorithms into development of semiconductor quantum computers.
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Submitted 3 August, 2023; v1 submitted 7 July, 2023;
originally announced July 2023.
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Bounds to electron spin qubit variability for scalable CMOS architectures
Authors:
Jesús D. Cifuentes,
Tuomo Tanttu,
Will Gilbert,
Jonathan Y. Huang,
Ensar Vahapoglu,
Ross C. C. Leon,
Santiago Serrano,
Dennis Otter,
Daniel Dunmore,
Philip Y. Mai,
Frédéric Schlattner,
MengKe Feng,
Kohei Itoh,
Nikolay Abrosimov,
Hans-Joachim Pohl,
Michael Thewalt,
Arne Laucht,
Chih Hwan Yang,
Christopher C. Escott,
Wee Han Lim,
Fay E. Hudson,
Rajib Rahman,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, co…
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Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and developing theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.
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Submitted 5 July, 2024; v1 submitted 26 March, 2023;
originally announced March 2023.
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Assessment of error variation in high-fidelity two-qubit gates in silicon
Authors:
Tuomo Tanttu,
Wee Han Lim,
Jonathan Y. Huang,
Nard Dumoulin Stuyck,
Will Gilbert,
Rocky Y. Su,
MengKe Feng,
Jesus D. Cifuentes,
Amanda E. Seedhouse,
Stefan K. Seritan,
Corey I. Ostrove,
Kenneth M. Rudinger,
Ross C. C. Leon,
Wister Huang,
Christopher C. Escott,
Kohei M. Itoh,
Nikolay V. Abrosimov,
Hans-Joachim Pohl,
Michael L. W. Thewalt,
Fay E. Hudson,
Robin Blume-Kohout,
Stephen D. Bartlett,
Andrea Morello,
Arne Laucht,
Chih Hwan Yang
, et al. (2 additional authors not shown)
Abstract:
Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit pro…
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Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors.
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Submitted 15 March, 2024; v1 submitted 7 March, 2023;
originally announced March 2023.
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Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry
Authors:
Zeheng Wang,
MengKe Feng,
Santiago Serrano,
William Gilbert,
Ross C. C. Leon,
Tuomo Tanttu,
Philip Mai,
Dylan Liang,
Jonathan Y. Huang,
Yue Su,
Wee Han Lim,
Fay E. Hudson,
Christopher C. Escott,
Andrea Morello,
Chih Hwan Yang,
Andrew S. Dzurak,
Andre Saraiva,
Arne Laucht
Abstract:
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transpor…
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The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transported across the chip via shuttling, or coupled via mediating quantum systems over short-to-intermediate distances. This paper investigates the charge and spin characteristics of an elongated quantum dot -- a so-called jellybean quantum dot -- for the prospects of acting as a qubit-qubit coupler. Charge transport, charge sensing and magneto-spectroscopy measurements are performed on a SiMOS quantum dot device at mK temperature, and compared to Hartree-Fock multi-electron simulations. At low electron occupancies where disorder effects and strong electron-electron interaction dominate over the electrostatic confinement potential, the data reveals the formation of three coupled dots, akin to a tunable, artificial molecule. One dot is formed centrally under the gate and two are formed at the edges. At high electron occupancies, these dots merge into one large dot with well-defined spin states, verifying that jellybean dots have the potential to be used as qubit couplers in future quantum computing architectures.
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Submitted 8 August, 2022;
originally announced August 2022.
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On-demand electrical control of spin qubits
Authors:
Will Gilbert,
Tuomo Tanttu,
Wee Han Lim,
MengKe Feng,
Jonathan Y. Huang,
Jesus D. Cifuentes,
Santiago Serrano,
Philip Y. Mai,
Ross C. C. Leon,
Christopher C. Escott,
Kohei M. Itoh,
Nikolay V. Abrosimov,
Hans-Joachim Pohl,
Michael L. W. Thewalt,
Fay E. Hudson,
Andrea Morello,
Arne Laucht,
Chih Hwan Yang,
Andre Saraiva,
Andrew S. Dzurak
Abstract:
Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet…
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Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors.
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Submitted 18 March, 2022; v1 submitted 17 January, 2022;
originally announced January 2022.
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Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits
Authors:
Andre Saraiva,
Wee Han Lim,
Chih Hwan Yang,
Christopher C. Escott,
Arne Laucht,
Andrew S. Dzurak
Abstract:
Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how…
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Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. We review here some key properties of the materials that have a direct impact on qubit performance and variability.
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Submitted 29 July, 2021; v1 submitted 28 July, 2021;
originally announced July 2021.
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A high-sensitivity charge sensor for silicon qubits above one kelvin
Authors:
Jonathan Y. Huang,
Wee Han Lim,
Ross C. C. Leon,
Chih Hwan Yang,
Fay E. Hudson,
Christopher C. Escott,
Andre Saraiva,
Andrew S. Dzurak,
Arne Laucht
Abstract:
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservo…
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Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservoirs. Here we exploit the tunneling between two quantised states in a double-island SET (DISET) to demonstrate a charge sensor with an improvement in signal-to-noise by an order of magnitude compared to a standard SISET, and a single-shot charge readout fidelity above 99 % up to 8 K at a bandwidth > 100 kHz. These improvements are consistent with our theoretical modelling of the temperature-dependent current transport for both types of SETs. With minor additional hardware overheads, these sensors can be integrated into existing qubit architectures for high fidelity charge readout at few-kelvin temperatures.
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Submitted 8 June, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Single-shot readout of an electron spin in silicon
Authors:
Andrea Morello,
Jarryd J. Pla,
Floris A. Zwanenburg,
Kok W. Chan,
Hans Huebl,
Mikko Mottonen,
Christopher D. Nugroho,
Changyi Yang,
Jessica A. van Donkelaar,
Andrew D. C. Alves,
David N. Jamieson,
Christopher C. Escott,
Lloyd C. L. Hollenberg,
Robert G. Clark,
Andrew S. Dzurak
Abstract:
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit…
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The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.
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Submitted 24 May, 2010; v1 submitted 13 March, 2010;
originally announced March 2010.
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Modeling Single Electron Transfer in Si:P Double Quantum Dots
Authors:
K. H. Lee,
A. D. Greentree,
J. P. Dinale,
C. C. Escott,
A. S. Dzurak,
R. G. Clark
Abstract:
Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within su…
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Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within such DQD devices and understanding the impact of fabrication parameters on this process. We show that misalignment between the buried dots and surface gates affects the charge transfer behavior and identify some of the challenges posed by reducing the size of the metallic dot to the few donor regime.
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Submitted 13 September, 2004;
originally announced September 2004.
