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Robust Parallel Laser Driving of Quantum Dots for Multiplexing of Quantum Light Sources
Authors:
Ajan Ramachandran,
Grant R. Wilbur,
Reuble Mathew,
Allister Mason,
Sabine ONeal,
Dennis G. Deppe,
Kimberley C. Hall
Abstract:
Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms hav…
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Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms have large dipole moments and a quantum confined energy level structure, enabling the realization of single photon sources with high repetition rates and high single photon purity. Quantum dots may also be triggered using a laser pulse for on-demand operation. The naturally-occurring size variations in ensembles of quantum dots offers the potential to increase the bandwidth of quantum communication systems through wavelength-division multiplexing, but conventional laser triggering schemes based on Rabi rotations are ineffective when applied to inequivalent emitters. Here we report the demonstration of the simultaneous triggering of >10 quantum dots using adiabatic rapid passage. We show that high-fidelity quantum state inversion is possible in a system of quantum dots with a 15~meV range of optical transition energies using a single broadband, chirped laser pulse, laying the foundation for high-bandwidth, multiplexed quantum networks.
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Submitted 28 November, 2023;
originally announced November 2023.
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Spectrally-modified frequency-swept pulses for optically-driven quantum light sources
Authors:
G. R. Wilbur,
A. Binai-Motlagh,
A. Clarke,
A. Ramachandran,
N. Milson,
J. P. Healey,
S. O'Neal,
D. G. Deppe,
K. C. Hall
Abstract:
We present a driving scheme for solid-state quantum emitters using frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. Our scheme enables high-fidelity state inversion, exhibits robustness to variations in the laser pulse parameters and is immune to phonon-mediated excitation-induced dephasing, benefits that derive from the the insensitivity of th…
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We present a driving scheme for solid-state quantum emitters using frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. Our scheme enables high-fidelity state inversion, exhibits robustness to variations in the laser pulse parameters and is immune to phonon-mediated excitation-induced dephasing, benefits that derive from the the insensitivity of the adiabaticity condition to variations in the experimental parameters. Our resonant driving approach could be combined with spectral filtering of the scattered pump light and photonic devices for enhanced collection efficiency to realize simultaneous high indistinguishability and brightness in single photon source applications.
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Submitted 2 March, 2022;
originally announced March 2022.
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Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors
Authors:
G. Zhao,
Y. Zhang,
D. G. Deppe,
K. Konthasinghe,
A. Muller
Abstract:
We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain mediu…
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We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at $T$ = 40 K) lasing was obtained with an incident optical power as low as $P_{\rm th}$ = 10 mW ($λ_{\rm p}$ = 808 nm). The laser linewidth was found to be $\approx$3 GHz at $P_{\rm p}\approx$ 5 $P_{\rm th}$.
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Submitted 25 August, 2012;
originally announced August 2012.
