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Atomic-scale imaging and charge state manipulation of NV centers by scanning tunneling microscopy
Authors:
Arjun Raghavan,
Seokjin Bae,
Nazar Delegan,
F. Joseph Heremans,
Vidya Madhavan
Abstract:
Nitrogen-vacancy (NV) centers in diamond are among the most promising solid-state qubit candidates, owing to their exceptionally long spin coherence times, efficient spin-photon coupling, room-temperature operation, and steadily advancing fabrication and integration techniques. Despite significant progress in the field, atomic-scale characterization and control of individual NV centers have remain…
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Nitrogen-vacancy (NV) centers in diamond are among the most promising solid-state qubit candidates, owing to their exceptionally long spin coherence times, efficient spin-photon coupling, room-temperature operation, and steadily advancing fabrication and integration techniques. Despite significant progress in the field, atomic-scale characterization and control of individual NV centers have remained elusive. In this work, we present a novel approach utilizing a conductive graphene capping layer to enable direct imaging and manipulation of $NV^{-}$ defects via scanning tunneling microscopy (STM). By investigating over 40 individual $NV^{-}$ centers, we identify their spectroscopic signatures and spatial configurations. Our dI/dV conductance spectra reveal the ground state approximately 300 meV below the Fermi level. Additionally, density-of-states mapping uncovers a two-lobed wavefunction aligned along the [111] crystallographic direction. Remarkably, we demonstrate the ability to manipulate the charge state of the NV centers from $NV^{-}$ to $NV^{0}$ through STM tip-induced gating. This work represents a significant advancement in the atomic-scale understanding and engineering of NV centers, paving the way for future quantum device development.
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Submitted 17 April, 2025;
originally announced April 2025.
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Engineering Dark Spin-Free Diamond Interfaces
Authors:
Xiaofei Yu,
Evan J. Villafranca,
Stella Wang,
Jessica C. Jones,
Mouzhe Xie,
Jonah Nagura,
Ignacio Chi-Durán,
Nazar Delegan,
Alex B. F. Martinson,
Michael E. Flatté,
Denis R. Candido,
Giulia Galli,
Peter C. Maurer
Abstract:
Nitrogen-vacancy (NV) centers in diamond are extensively utilized as quantum sensors for imaging fields at the nanoscale. The ultra-high sensitivity of NV magnetometers has enabled the detection and spectroscopy of individual electron spins, with potentially far-reaching applications in condensed matter physics, spintronics, and molecular biology. However, the surfaces of these diamond sensors nat…
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Nitrogen-vacancy (NV) centers in diamond are extensively utilized as quantum sensors for imaging fields at the nanoscale. The ultra-high sensitivity of NV magnetometers has enabled the detection and spectroscopy of individual electron spins, with potentially far-reaching applications in condensed matter physics, spintronics, and molecular biology. However, the surfaces of these diamond sensors naturally contain electron spins, which create a background signal that can be hard to differentiate from the signal of the target spins. In this study, we develop a surface modification approach that eliminates the unwanted signal of these so-called dark electron spins. Our surface passivation technique, based on coating diamond surfaces with a thin titanium oxide (TiO2) layer, reduces the dark spin density. The observed reduction in dark spin density aligns with our findings on the electronic structure of the diamond-TiO2 interface. The reduction, from a typical value of $2,000$~$μ$m$^{-2}$ to a value below that set by the detection limit of our NV sensors ($200$~$μ$m$^{-2}$), results in a two-fold increase in spin echo coherence time of near surface NV centers. Furthermore, we derive a comprehensive spin model that connects dark spin depolarization with NV coherence, providing additional insights into the mechanisms behind the observed spin dynamics. Our findings are directly transferable to other quantum platforms, including nanoscale solid state qubits and superconducting qubits.
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Submitted 3 May, 2025; v1 submitted 11 April, 2025;
originally announced April 2025.
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Purcell-enhanced emissions from diamond color centers in slow light photonic crystal waveguides
Authors:
Sophie W. Ding,
Chang Jin,
Kazuhiro Kuruma,
Xinghan Guo,
Michael Haas,
Boris Korzh,
Andrew Beyer,
Matt Shaw,
Neil Sinclair,
David D. Awschalom,
F. Joseph Heremans,
Nazar Delegan,
Alexander A. High,
Marko Loncar
Abstract:
Quantum memories based on emitters with optically addressable spins rely on efficient photonic interfaces, often implemented as nanophotonic cavities with ideally narrow spectral linewidths and small mode volumes. However, these approaches require nearly perfect spectral and spatial overlap between the cavity mode and quantum emitter, which can be challenging. This is especially true in the case o…
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Quantum memories based on emitters with optically addressable spins rely on efficient photonic interfaces, often implemented as nanophotonic cavities with ideally narrow spectral linewidths and small mode volumes. However, these approaches require nearly perfect spectral and spatial overlap between the cavity mode and quantum emitter, which can be challenging. This is especially true in the case of solid-state quantum emitters that are often randomly positioned and can suffer from significant inhomogeneous broadening. An alternative approach to mitigate these challenges is to use slow-light waveguides that can enhance light-matter interaction across large optical bandwidths and large areas. Here, we demonstrate diamond slow light photonic crystal (PhC) waveguides that enable broadband optical coupling to embedded silicon-vacancy (SiV) color centers. We take advantage of the recently demonstrated thin-film diamond photonic platform to fabricate fully suspended two-dimensional PhC waveguides. Using this approach, we demonstrate waveguide modes with high group indices up to 70 and observe Purcell-enhanced emissions of the SiVs coupled to the waveguide mode. Our approach represents a practical diamond platform for robust spin-photon interfaces with color centers.
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Submitted 2 March, 2025;
originally announced March 2025.
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High-Q Cavity Interface for Color Centers in Thin Film Diamond
Authors:
Sophie W. Ding,
Michael Haas,
Xinghan Guo,
Kazuhiro Kuruma,
Chang Jin,
Zixi Li,
David D. Awschalom,
Nazar Delegan,
F. Joseph Heremans,
Alex High,
Marko Loncar
Abstract:
Quantum information technology offers the potential to realize unprecedented computational resources via secure channels capable of distributing entanglement between quantum computers. Diamond, as a host to atom-like defects with optically-accessible spin qubits, is a leading platform to realize quantum memory nodes needed to extend the reach of quantum links. Photonic crystal (PhC) cavities enhan…
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Quantum information technology offers the potential to realize unprecedented computational resources via secure channels capable of distributing entanglement between quantum computers. Diamond, as a host to atom-like defects with optically-accessible spin qubits, is a leading platform to realize quantum memory nodes needed to extend the reach of quantum links. Photonic crystal (PhC) cavities enhance light-matter interaction and are essential ingredients of an efficient interface between spins and photons that are used to store and communicate quantum information respectively. Despite great effort, however, the realization of visible PhC cavities with high quality factor (Q) and design flexibility is challenging in diamond. Here, we demonstrate one- and two-dimensional PhC cavities fabricated in recently developed thin-film diamonds, featuring Q-factors of 1.8x10$^5$ and 1.6x10$^5$, respectively, the highest Qs for visible PhC cavities realized in any material. Importantly, our fabrication process is simple and high-yield, based on conventional planar fabrication techniques, in contrast to previous approaches that rely on complex undercut methods. We also demonstrate fiber-coupled 1D PhC cavities with high photon extraction efficiency, and optical coupling between a single SiV center and such a cavity at 4K achieving a Purcell factor of 13. The demonstrated diamond thin-film photonic platform will improve the performance and scalability of quantum nodes and expand the range of quantum technologies.
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Submitted 8 February, 2024;
originally announced February 2024.
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Quantum spin probe of single charge dynamics
Authors:
Jonathan C. Marcks,
Mykyta Onizhuk,
Yu-Xin Wang,
Yizhi Zhu,
Yu Jin,
Benjamin S. Soloway,
Masaya Fukami,
Nazar Delegan,
F. Joseph Heremans,
Aashish A. Clerk,
Giulia Galli,
David D. Awschalom
Abstract:
Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. A method for probing optically inactive spin defects would reve…
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Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. A method for probing optically inactive spin defects would reveal semiconductor physics at the atomic scale and advance the study of new quantum systems. We exploit the intrinsic correlation between the charge and spin states of defect centers to measure defect charge populations and dynamics through the steady-state spin population, read-out at the single-defect level with a nearby optically active qubit. We directly measure ionization and charge relaxation of single dark defects in diamond, effects we do not have access to with traditional coherence-based quantum sensing. These spin resonance-based methods generalize to other solid state defect systems in relevant materials.
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Submitted 5 December, 2023;
originally announced December 2023.
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Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect
Authors:
Paul Kairys,
Jonathan C. Marcks,
Nazar Delegan,
Jiefei Zhang,
David D. Awschalom,
F. Joseph Heremans
Abstract:
Solid-state electron spin qubits, like the nitrogen-vacancy center in diamond, rely on control sequences of population inversion to enhance sensitivity and improve device coherence. But even for this paradigmatic system, the fundamental limits of population inversion and potential impacts on applications like quantum sensing have not been assessed quantitatively. Here, we perform high accuracy sim…
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Solid-state electron spin qubits, like the nitrogen-vacancy center in diamond, rely on control sequences of population inversion to enhance sensitivity and improve device coherence. But even for this paradigmatic system, the fundamental limits of population inversion and potential impacts on applications like quantum sensing have not been assessed quantitatively. Here, we perform high accuracy simulations beyond the rotating wave approximation, including explicit unitary simulation of neighboring nuclear spins. Using quantum optimal control, we identify analytical pulses for the control of a qubit subspace within the spin-1 ground state and quantify the relationship between pulse complexity, control duration, and fidelity. We find exponentially increasing amplitude and bandwidth requirements with reduced control duration and further quantify the emergence of non-Markovian effects for multipulse sequences using sub-nanosecond population inversion. From this, we determine that the reduced fidelity and non-Markovianity is due to coherent interactions of the electron spin with the nuclear spin environment. Ultimately, we identify a potentially realizable regime of nanosecond control duration for high-fidelity multipulse sequences. These results provide key insights into the fundamental limits of quantum information processing using electron spin defects in diamond.
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Submitted 24 September, 2024; v1 submitted 6 September, 2023;
originally announced September 2023.
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Magnon-mediated qubit coupling determined via dissipation measurements
Authors:
Masaya Fukami,
Jonathan C. Marcks,
Denis R. Candido,
Leah R. Weiss,
Benjamin Soloway,
Sean E. Sullivan,
Nazar Delegan,
F. Joseph Heremans,
Michael E. Flatté,
David D. Awschalom
Abstract:
Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention,…
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Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention, especially for interconnecting isolated spin qubits at length-scales far beyond those set by the dipolar coupling. However, despite extensive theoretical efforts, there is a lack of experimental characterization of the magnon-mediated interaction between NV centers, which is necessary to develop such hybrid quantum architectures. Here, we experimentally determine the magnon-mediated NV-NV coupling from the magnon-induced self-energy of NV centers. Our results are quantitatively consistent with a model in which the NV center is coupled to magnons by dipolar interactions. This work provides a versatile tool to characterize HQSs in the absence of strong coupling, informing future efforts to engineer entangled solid-state systems.
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Submitted 22 August, 2023;
originally announced August 2023.
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Guiding Diamond Spin Qubit Growth with Computational Methods
Authors:
Jonathan C. Marcks,
Mykyta Onizhuk,
Nazar Delegan,
Yu-Xin Wang,
Masaya Fukami,
Maya Watts,
Aashish A. Clerk,
F. Joseph Heremans,
Giulia Galli,
David D. Awschalom
Abstract:
The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as s…
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The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as sources of decoherence. However, current synthesis approaches result in stochastic defect spin positions, reducing the technology's potential for deterministic control and yield of NV-spin bath systems, as well as scalability and integration with other technologies. Here, we demonstrate the use of theoretical calculations of electronic central spin decoherence as an integral part of an NV-spin bath synthesis workflow, providing a path forward for the quantitative design of NV center-based quantum sensing systems. We use computationally generated coherence data to characterize the properties of single NV center qubits across relevant growth parameters to find general trends in coherence time distributions dependent on spin bath dimensionality and density. We then build a maximum likelihood estimator with our theoretical model, enabling the characterization of a test sample through NV T2* measurements. Finally, we explore the impact of dimensionality on the yield of strongly coupled electron spin systems. The methods presented herein are general and applicable to other qubit platforms that can be appropriately simulated.
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Submitted 17 August, 2023;
originally announced August 2023.
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Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure
Authors:
Xinghan Guo,
Alexander M. Stramma,
Zixi Li,
William G. Roth,
Benchen Huang,
Yu Jin,
Ryan A. Parker,
Jesús Arjona Martínez,
Noah Shofer,
Cathryn P. Michaels,
Carola P. Purser,
Martin H. Appel,
Evgeny M. Alexeev,
Tianle Liu,
Andrea C. Ferrari,
David D. Awschalom,
Nazar Delegan,
Benjamin Pingault,
Giulia Galli,
F. Joseph Heremans,
Mete Atatüre,
Alexander A. High
Abstract:
Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and…
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Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. However, the SnV spin lacks efficient microwave control and its spin coherence degrades with higher temperature. In this work, we introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9) % gate fidelity and spin coherence protection beyond a millisecond. Moreover, the presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223(10) $μ$s at 4 K, a widely accessible temperature in common cryogenic systems. Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths. Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies.
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Submitted 6 October, 2023; v1 submitted 21 July, 2023;
originally announced July 2023.
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Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies
Authors:
Xinghan Guo,
Mouzhe Xie,
Anchita Addhya,
Avery Linder,
Uri Zvi,
Stella Wang,
Xiaofei Yu,
Tanvi D. Deshmukh,
Yuzi Liu,
Ian N. Hammock,
Zixi Li,
Clayton T. DeVault,
Amy Butcher,
Aaron P. Esser-Kahn,
David D. Awschalom,
Nazar Delegan,
Peter C. Maurer,
F. Joseph Heremans,
Alexander A. High
Abstract:
Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium…
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Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate. Our bonding process combines customized membrane synthesis, transfer, and dry surface functionalization, allowing for minimal contamination while providing pathways for near unity yield and scalability. We generate bonded crystalline membranes with thickness as low as 10 nm, sub-nm interfacial regions, and nanometer-scale thickness variability over 200 by 200 $μm^2$ areas. We measure spin coherence times $T_2$ for nitrogen-vacancy centers in bonded membranes of up to 623(21) $μ$s, suitable for advanced quantum applications. We demonstrate multiple methods for integrating high quality factor nanophotonic cavities with the diamond heterostructures, highlighting the platform versatility in quantum photonic applications. Furthermore, we show that our ultra-thin diamond membranes are compatible with total internal reflection fluorescence (TIRF) microscopy, which enables interfacing coherent diamond quantum sensors with living cells while rejecting unwanted background luminescence. The processes demonstrated herein provide a full toolkit to synthesize heterogeneous diamond-based hybrid systems for quantum and electronic technologies.
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Submitted 20 June, 2024; v1 submitted 7 June, 2023;
originally announced June 2023.
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Atomic Layer Deposition Nucleation Dependence on Diamond Surface Termination
Authors:
Jessica C. Jones,
Nazar Delegan,
F. Joseph Heremans,
Alex B. F. Martinson
Abstract:
Surface termination and interfacial interactions are critical for advanced solid-state quantum applications. In this paper, we demonstrate that atomic layer deposition (ALD) can both provide valuable insight on the chemical environment of the surface, having sufficient sensitivity to distinguish between the common diamond (001) surface termination types and passivate these interfaces as desired. W…
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Surface termination and interfacial interactions are critical for advanced solid-state quantum applications. In this paper, we demonstrate that atomic layer deposition (ALD) can both provide valuable insight on the chemical environment of the surface, having sufficient sensitivity to distinguish between the common diamond (001) surface termination types and passivate these interfaces as desired. We selected diamond substrates exhibiting both smooth and anomalously rough surfaces to probe the effect of morphology on ALD nucleation. We use high resolution in situ spectroscopic ellipsometry to monitor the surface reaction with sub-angstrom resolution, to evaluate the nucleation of an ALD Al2O3 process as a function of different ex and in situ treatments to the diamond surface. In situ water dosing and high vacuum annealing provided the most favorable environment for nucleation of dimethylaluminum isopropoxide and water ALD. Hydrogen termination passivated both smooth and rough surfaces while triacid cleaning passivated the smooth surface only, with striking effectiveness.
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Submitted 26 April, 2023;
originally announced April 2023.
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Tunable and Transferable Diamond Membranes for Integrated Quantum Technologies
Authors:
Xinghan Guo,
Nazar Delegan,
Jonathan C. Karsch,
Zixi Li,
Tianle Liu,
Robert Shreiner,
Amy Butcher,
David D. Awschalom,
F. Joseph Heremans,
Alexander A. High
Abstract:
Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 nm to 250…
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Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 nm to 250 nm), are deterministically transferable, have bilaterally atomically flat surfaces (Rq <= 0.3 nm), and bulk-diamond-like crystallinity. Color centers are synthesized via both implantation and in-situ overgrowth incorporation. Within 110 nm thick membranes, individual germanium-vacancy (GeV-) centers exhibit stable photoluminescence at 5.4 K and average optical transition linewidths as low as 125 MHz. The room temperature spin coherence of individual nitrogen-vacancy (NV-) centers shows Ramsey spin dephasing times (T2*) and Hahn echo times (T2) as long as 150 us and 400 us, respectively. This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.
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Submitted 23 September, 2021;
originally announced September 2021.
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Scanning X-ray Diffraction Microscopy for Diamond Quantum Sensing
Authors:
Mason C. Marshall,
David F. Phillips,
Matthew J. Turner,
Mark J. H. Ku,
Tao Zhou,
Nazar Delegan,
F. Joseph Heremans,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal…
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Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal strain. Here, we exploit nanofocused scanning X-ray diffraction microscopy to quantitatively measure crystal deformation from defects in diamond with high spatial and strain resolution. Combining information from multiple Bragg angles allows stereoscopic three-dimensional modeling of strain feature geometry; the diffraction results are validated via comparison to optical measurements of the strain tensor based on spin-state-dependent spectroscopy of ensembles of nitrogen vacancy (NV) centers in the diamond. Our results demonstrate both strain and spatial resolution sufficient for directional detection of dark matter via X-ray measurement of crystal strain, and provide a promising tool for diamond growth analysis and improvement of defect-based sensing.
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Submitted 14 October, 2022; v1 submitted 15 March, 2021;
originally announced March 2021.
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High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2
Authors:
Amy Butcher,
Xinghan Guo,
Robert Shreiner,
Nazar Delegan,
Kai Hao,
Peter J. Duda III,
David D. Awschalom,
F. Joseph Heremans,
Alexander A. High
Abstract:
Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negati…
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Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. Here, we developed an integrated photonics platform based on templated atomic layer deposition of TiO2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.
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Submitted 30 May, 2020; v1 submitted 7 April, 2020;
originally announced April 2020.
