Efficient and all-carbon electrical readout of a NV based quantum sensor
Authors:
Guillaume Villaret,
Ludovic Mayer,
Martin Schmidt,
Simone Magaletti,
Mary De Feudis,
Matthew Markham,
Andrew Edmonds,
Jean-François Roch,
Thierry Debuisschert
Abstract:
The spin readout of an ensemble of nitrogen-vacancy (NV) centers in diamond can be realized by a photoconductive detection that is a complementary method to the optical detection of the NV electron spin magnetic resonance. Here, we implement the photoconductive detection through graphitic planar electrodes that collect the photocurrent. Graphitic electrodes are patterned using a xenon Focused-Ion…
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The spin readout of an ensemble of nitrogen-vacancy (NV) centers in diamond can be realized by a photoconductive detection that is a complementary method to the optical detection of the NV electron spin magnetic resonance. Here, we implement the photoconductive detection through graphitic planar electrodes that collect the photocurrent. Graphitic electrodes are patterned using a xenon Focused-Ion Beam on an Optical-Grade quality diamond crystal containing a nitrogen concentration of ~1 ppm and a NV concentration of a few ppb. Resistance and current-voltage characteristics of the NV-doped diamond junction are investigated tuning the 532 nm pump beam intensity. The junction has an ohmic behavior and under a strong bias field, we observe velocity saturation of the optically-induced carriers in the diamond junction. We perform the photoconductive detection in continuous-wave regime of the magnetic resonance of the NV centers ensemble for a magnetic field applied along the <100> and the <111> direction with a magnitude above 100 mT. This technique enables the realization of all-carbon diamond quantum sensors integrating graphitic microstructures for the electrical readout.
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Submitted 20 December, 2022;
originally announced December 2022.
Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa
Authors:
Baptiste Vindolet,
Marie-Pierre Adam,
Loïc Toraille,
Mayeul Chipaux,
Antoine Hilberer,
Géraud Dupuy,
Lukas Razinkovas,
Audrius Alkauskas,
Gergő Thiering,
Adam Gali,
Mary De Feudis,
Midrel Wilfried Ngandeu Ngambou,
Jocelyn Achard,
Alexandre Tallaire,
Martin Schmidt,
Christoph Becher,
Jean-François Roch
Abstract:
We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon…
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We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon lines by 17 THz (70 meV) and 78 THz (320 meV), respectively. These measured pressure induced shifts are in good agreement with ab initio calculations that take into account the lattice compression based on the equation of state of diamond and that are extended to the case of the tin-vacancy (SnV) center. This work provides guidance on the use of group-IV-vacancy centers as quantum sensors under extreme pressures that will exploit their specific optical and spin properties induced by their intrinsic inversion-symmetric structure.
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Submitted 29 November, 2022; v1 submitted 20 September, 2022;
originally announced September 2022.
