Long distance spin shuttling enabled by few-parameter velocity optimization
Authors:
Alessandro David,
Akshay Menon Pazhedath,
Lars R. Schreiber,
Tommaso Calarco,
Hendrik Bluhm,
Felix Motzoi
Abstract:
Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley degrees of freedom and well disorder dictate a slow shutting speed which seems to limit errors to above correction thresholds if not mitigated. We increase the precision of this prediction, showing that typical errors for…
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Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley degrees of freedom and well disorder dictate a slow shutting speed which seems to limit errors to above correction thresholds if not mitigated. We increase the precision of this prediction, showing that typical errors for 10 $μ$m shuttling at constant speed results in O(1) error, using fast, automatically differentiable numerics and including improved disorder modeling and potential noise ranges. However, remarkably, we show that these errors can be brought to well below fault-tolerant thresholds using trajectory shaping with very simple parametrization with as few as 4 Fourier components, well within the means for experimental in-situ realization, and without the need for targeting or knowing the location of valley near degeneracies.
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Submitted 11 September, 2024;
originally announced September 2024.
Large spin shuttling oscillations enabling high-fidelity single qubit gates
Authors:
Akshay Menon Pazhedath,
Alessandro David,
Max Oberländer,
Matthias M. Müller,
Tommaso Calarco,
Hendrik Bluhm,
Felix Motzoi
Abstract:
Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength. However, due to qubit wiring considerations, mobile electron architectures have been proposed to facilitate upward scaling. In this work, we examine and demonstrate the possibility of signif…
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Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength. However, due to qubit wiring considerations, mobile electron architectures have been proposed to facilitate upward scaling. In this work, we examine and demonstrate the possibility of significantly outperforming static EDSR-type single-qubit pulsing by taking advantage of the larger spatial mobility to achieve larger Rabi frequencies and reduce the effect of charge noise. Our theoretical results indicate that fidelities are ultimately bottlenecked by spin-valley physics, which can be suppressed through the use of quantum optimal control, and we demonstrate that, across different potential regimes and competing physical models, shuttling based single-qubit gates retain significant advantage over existing alternatives.
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Submitted 1 March, 2024;
originally announced March 2024.
