Thickness dependence of the mechanical properties of piezoelectric high-$Q_m$ nanomechanical resonators made from aluminium nitride
Authors:
Anastasiia Ciers,
Alexander Jung,
Joachim Ciers,
Laurentius Radit Nindito,
Hannes Pfeifer,
Armin Dadgar,
Jürgen Bläsing,
André Strittmatter,
Witlef Wieczorek
Abstract:
Nanomechanical resonators with high quality factors (\Qm{}) enable mechanics-based quantum technologies, in particular quantum sensing and quantum transduction. High-\Qm{} nanomechanical resonators in the kHz to MHz frequency range can be realized in tensile-strained thin films that allow the use of dissipation dilution techniques to drastically increase \Qm{}. In our work, we study the material p…
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Nanomechanical resonators with high quality factors (\Qm{}) enable mechanics-based quantum technologies, in particular quantum sensing and quantum transduction. High-\Qm{} nanomechanical resonators in the kHz to MHz frequency range can be realized in tensile-strained thin films that allow the use of dissipation dilution techniques to drastically increase \Qm{}. In our work, we study the material properties of tensile-strained piezoelectric films made from aluminium nitride (AlN). We characterize crystalline AlN films with a thickness ranging from \SI{45}{\nano\meter} to \SI{295}{\nano\meter}, which are directly grown on Si(111) by metal-organic vapour-phase epitaxy. We report on the crystal quality and surface roughness, the piezoelectric response, and the residual and released stress of the AlN thin films. Importantly, we determine the intrinsic quality factor of the films at room temperature in high vacuum. We fabricate and characterize AlN nanomechanical resonators that exploit dissipation dilution to enhance the intrinsic quality factor by utilizing the tensile strain in the film. We find that AlN nanomechanical resonators below \SI{200}{\nano\meter} thickness exhibit the highest \Qf{}-product, on the order of $10^{12}$\,Hz. We discuss possible strategies to optimize the material growth that should lead to devices that reach even higher \Qf{}-products. This will pave the way for future advancements of optoelectromechanical quantum devices made from tensile-strained piezoelectric AlN.
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Submitted 13 January, 2025; v1 submitted 4 October, 2024;
originally announced October 2024.
Nanomechanical crystalline AlN resonators with high quality factors for quantum optoelectromechanics
Authors:
Anastasiia Ciers,
Alexander Jung,
Joachim Ciers,
Laurentius Radit Nindito,
Hannes Pfeifer,
Armin Dadgar,
Andre Strittmatter,
Witlef Wieczorek
Abstract:
High-\Qm{} mechanical resonators are crucial for applications where low noise and long coherence time are required, as mirror suspensions, quantum cavity optomechanical devices, or nanomechanical sensors. Tensile strain in the material enables the use of dissipation dilution and strain engineering techniques, which increase the mechanical quality factor. These techniques have been employed for hig…
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High-\Qm{} mechanical resonators are crucial for applications where low noise and long coherence time are required, as mirror suspensions, quantum cavity optomechanical devices, or nanomechanical sensors. Tensile strain in the material enables the use of dissipation dilution and strain engineering techniques, which increase the mechanical quality factor. These techniques have been employed for high-\Qm{} mechanical resonators made from amorphous materials and, recently, from crystalline materials such as InGaP, SiC, and Si. A strained crystalline film exhibiting substantial piezoelectricity expands the capability of high-\Qm{} nanomechanical resonators to directly utilize electronic degrees of freedom. In this work we realize nanomechanical resonators with \Qm{} up to $2.9\times 10^{7}$ made from tensile-strained \SI{290}{\nano\meter}-thick AlN, which is an epitaxially-grown crystalline material offering strong piezoelectricity. We demonstrate nanomechanical resonators that exploit dissipation dilution and strain engineering to reach a \Qf-product approaching $10^{13}$\,\SI{}{\hertz} at room temperature. We realize a novel resonator geometry, triangline, whose shape follows the Al-N bonds and offers a central pad that we pattern with a photonic crystal. This allows us to reach an optical reflectivity above 80\% for efficient coupling to out-of-plane light. The presented results pave the way for quantum optoelectromechanical devices at room temperature based on tensile-strained AlN.
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Submitted 19 September, 2024; v1 submitted 19 February, 2024;
originally announced February 2024.
