-
Effect of disorder and strain on the operation of planar Ge hole spin qubits
Authors:
Abhikbrata Sarkar,
Pratik Chowdhury,
Xuedong Hu,
Andre Saraiva,
A. S. Dzurak,
A. R. Hamilton,
Rajib Rahman,
Dimitrie Culcer
Abstract:
Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy disorder and gate-induced strain on the operation of planar Ge hole spin qubits. Electrical operation of hole quantum dot spin qubits is enabled by the strong Rash…
▽ More
Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy disorder and gate-induced strain on the operation of planar Ge hole spin qubits. Electrical operation of hole quantum dot spin qubits is enabled by the strong Rashba spin-orbit coupling (SOC) originating from the intrinsic SOC in the Ge valence band as well as from the structural inversion asymmetry inherent in the underlying 2D hole gas. We use the atomistic valence force field (VFF) method to compute the strain due to random alloy disorder, and thermal expansion models in COMSOL Multiphysics to obtain the strain from a realistic gate-stack of planar hole quantum dot confinement. Recently, spin-orbit coupling terms $\propto k$ have been shown to be induced by strain inhomogeneity. Our hybrid approach to realistic device modeling suggests that strain inhomogeneity due to both random alloy disorder and gate-induced strain make a strong contribution to the linear-$k$ Dresselhaus spin-orbit coupling, which eventually dominates hole spin EDSR; and there exist specific in-plane orientations of the global magnetic field $\mathbf{B}$ and the microwave drive $\mathbf{\tilde{E}}_{\text{ac}}$ for maximum EDSR Rabi frequency of the hole spin qubit. The current model including strain inhomogeneity accurately predicts the EDSR Rabi frequency to be $\!\sim\!100$ MHz for typical electric and magnetic fields in experiments, which represents at least an order of magnitude improvement in accuracy over phenomenological models assuming uniform uniaxial strain. State-of-the-art atomistic tight binding calculations via nano-electronic modeling (NEMO3D) are in agreement with the $\mathbf{k}{\cdot}\mathbf{p}$ description.
△ Less
Submitted 29 April, 2025; v1 submitted 10 February, 2025;
originally announced February 2025.
-
Recent advances in hole-spin qubits
Authors:
Yinan Fang,
Pericles Philippopoulos,
Dimitrie Culcer,
W. A. Coish,
Stefano Chesi
Abstract:
In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with co…
▽ More
In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with consequences on coherence and spin manipulation. In the second part of the article we provide a survey of experimental realizations, which spans a relatively broad spectrum of devices based on GaAs, Si, or Si/Ge heterostructures. We conclude with a brief outlook.
△ Less
Submitted 6 February, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
-
Roadmap on quantum nanotechnologies
Authors:
Arne Laucht,
Frank Hohls,
Niels Ubbelohde,
M Fernando Gonzalez-Zalba,
David J Reilly,
Søren Stobbe,
Tim Schröder,
Pasquale Scarlino,
Jonne V Koski,
Andrew Dzurak,
Chih-Hwan Yang,
Jun Yoneda,
Ferdinand Kuemmeth,
Hendrik Bluhm,
Jarryd Pla,
Charles Hill,
Joe Salfi,
Akira Oiwa,
Juha T Muhonen,
Ewold Verhagen,
Matthew D LaHaye,
Hyun Ho Kim,
Adam W Tsen,
Dimitrie Culcer,
Attila Geresdi
, et al. (4 additional authors not shown)
Abstract:
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu…
▽ More
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.
△ Less
Submitted 19 January, 2021;
originally announced January 2021.
-
Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
Authors:
Ke Wang,
Gang Xu,
Fei Gao,
He Liu,
Rong-Long Ma,
Xin Zhang,
Zhanning Wang,
Gang Cao,
Ting Wang,
Jian-Jun Zhang,
Dimitrie Culcer,
Xuedong Hu,
Hong-Wen Jiang,
Hai-Ou Li,
Guang-Can Guo,
Guo-Ping Guo
Abstract:
Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediate…
▽ More
Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.
△ Less
Submitted 12 January, 2022; v1 submitted 22 June, 2020;
originally announced June 2020.
-
Transport in two-dimensional topological materials: recent developments in experiment and theory
Authors:
Dimitrie Culcer,
Aydin Cem Keser,
Yongqing Li,
Grigory Tkachov
Abstract:
We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical…
▽ More
We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace.
△ Less
Submitted 23 July, 2019;
originally announced July 2019.
-
Engineering long spin coherence times of spin-orbit systems
Authors:
T. Kobayashi,
J. Salfi,
J. van der Heijden,
C. Chua,
M. G. House,
D. Culcer,
W. D. Hutchison,
B. C. Johnson,
J. C. McCallum,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
M. Y. Simmons,
S. Rogge
Abstract:
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s…
▽ More
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances.
△ Less
Submitted 1 October, 2018; v1 submitted 28 September, 2018;
originally announced September 2018.
-
Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
Authors:
M. A. Fogarty,
K. W. Chan,
B. Hensen,
W. Huang,
T. Tanttu,
C. H. Yang,
A. Laucht,
M. Veldhorst,
F. E. Hudson,
K. M. Itoh,
D. Culcer,
A. Morello,
A. S. Dzurak
Abstract:
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using $^{28}$Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent…
▽ More
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using $^{28}$Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
△ Less
Submitted 5 December, 2017; v1 submitted 11 August, 2017;
originally announced August 2017.
-
Control of valley dynamics in silicon quantum dots in the presence of an interface step
Authors:
Péter Boross,
Gábor Széchenyi,
Dimitrie Culcer,
András Pályi
Abstract:
Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic states of a silicon quantum dot can form a valley qubit. In this work, we show that a single-atom high step at the silicon/barrier interface induces a strong inte…
▽ More
Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic states of a silicon quantum dot can form a valley qubit. In this work, we show that a single-atom high step at the silicon/barrier interface induces a strong interaction of the qubit and in-plane electric fields, and analyze the consequences of this enhanced interaction on the dynamics of the qubit. The charge densities of the qubit states are deformed differently by the interface step, allowing non-demolition qubit readout via valley-to-charge conversion. A gate-induced in-plane electric field together with the interface step enables fast control of the valley qubit via electrically driven valley resonance. We calculate single- and two-qubit gate times, as well as relaxation and dephasing times, and present predictions for the parameter range where the gate times can be much shorter than the relaxation time and dephasing is reduced.
△ Less
Submitted 25 April, 2016;
originally announced April 2016.
-
NV-Center Based Digital Quantum Simulation of a Quantum Phase Transition in Topological Insulators
Authors:
Chenyong Ju,
Chao Lei,
Xiangkun Xu,
Dimitrie Culcer,
Zhenyu Zhang,
Jiangfeng Du
Abstract:
Nitrogen-vacancy centers in diamond are ideal platforms for quantum simulation, which allows one to handle problems that are intractable theoretically or experimentally. Here we propose a digital quantum simulation scheme to simulate the quantum phase transition occurring in an ultrathin topological insulator film placed in a parallel magnetic field [Zyuzin \textit{et al.}, Phys. Rev. B \textbf{83…
▽ More
Nitrogen-vacancy centers in diamond are ideal platforms for quantum simulation, which allows one to handle problems that are intractable theoretically or experimentally. Here we propose a digital quantum simulation scheme to simulate the quantum phase transition occurring in an ultrathin topological insulator film placed in a parallel magnetic field [Zyuzin \textit{et al.}, Phys. Rev. B \textbf{83}, 245428 (2011)]. The quantum simulator employs high quality spin qubits achievable in nitrogen-vacancy centers and can be realized with existing technology. The problem can be mapped onto the Hamiltonian of two entangled qubits represented by the electron and nuclear spins. The simulation uses the Trotter algorithm, with an operation time of the order of 100 $μ$s for each individual run.
△ Less
Submitted 5 October, 2013;
originally announced October 2013.
-
Realizing singlet-triplet qubits in multivalley Si quantum dots
Authors:
Dimitrie Culcer,
Lukasz Cywinski,
Qiuzi Li,
Xuedong Hu,
S. Das Sarma
Abstract:
There has been significant progress in the implementation and manipulation of singlet-triplet qubits in GaAs quantum dots. Given the considerably longer spin coherence times measured in Si, considerable interest has been generated recently in Si quantum dots. The physics of these systems is considerably more complex than the physics of GaAs quantum dots owing to the presence of the valley degree…
▽ More
There has been significant progress in the implementation and manipulation of singlet-triplet qubits in GaAs quantum dots. Given the considerably longer spin coherence times measured in Si, considerable interest has been generated recently in Si quantum dots. The physics of these systems is considerably more complex than the physics of GaAs quantum dots owing to the presence of the valley degree of freedom, which constitutes the focus of this work. In this paper we investigate the physics of Si quantum dots and focus on the feasibility of quantum coherent singlet-triplet qubit experiments analogous to those performed in GaAs. This additional degree of freedom greatly increases the complexity of the ground state and gives rise to highly nontrivial and interesting physics in the processes of qubit initialization, coherent manipulation and readout. We discuss the operational definition of a qubit in Si-based quantum dots. We find that in the presence of valley degeneracy a singlet-triplet qubit cannot be constructed, whereas for large valley splitting (>>k_B*T) the experiment is similar to GaAs. We show that experiments on singlet-triplet qubits analogous to those in GaAs would provide a method for estimating the valley coupling in Si. A Zeeman field distinguishes between different initialized states for any valley splitting and provides a tool to determine the size of this splitting.
△ Less
Submitted 5 November, 2009; v1 submitted 4 March, 2009;
originally announced March 2009.
