Strong Charge-Photon Coupling in Planar Germanium Enabled by Granular Aluminium Superinductors
Authors:
Marián Janík,
Kevin Roux,
Carla Borja Espinosa,
Oliver Sagi,
Abdulhamid Baghdadi,
Thomas Adletzberger,
Stefano Calcaterra,
Marc Botifoll,
Alba Garzón Manjón,
Jordi Arbiol,
Daniel Chrastina,
Giovanni Isella,
Ioan M. Pop,
Georgios Katsaros
Abstract:
High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is…
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High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is challenging, as their inductance and, therefore, impedance at high values are difficult to control. Here we have integrated a granular aluminium resonator, having a characteristic impedance exceeding the resistance quantum, with a germanium double quantum dot and demonstrate strong charge-photon coupling with a rate of $g_\text{c}/2π= (566 \pm 2)$ MHz. This was achieved due to the realisation of a wireless ohmmeter, which allows \emph{in situ} measurements during film deposition and, therefore, control of the kinetic inductance of granular aluminium films. Reproducible fabrication of circuits with impedances (inductances) exceeding 13 k$Ω$ (1 nH per square) is now possible. This broadly applicable method opens the path for novel qubits and high-fidelity, long-distance two-qubit gates.
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Submitted 3 July, 2024;
originally announced July 2024.
A singlet triplet hole spin qubit in planar Ge
Authors:
Daniel Jirovec,
Andrea Hofmann,
Andrea Ballabio,
Philipp M. Mutter,
Giulio Tavani,
Marc Botifoll,
Alessandro Crippa,
Josip Kukucka,
Oliver Sagi,
Frederico Martins,
Jaime Saez-Mollejo,
Ivan Prieto,
Maksim Borovkov,
Jordi Arbiol,
Daniel Chrastina,
Giovanni Isella,
Georgios Katsaros
Abstract:
Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the c…
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Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $μ$s which we extend beyond 150 $μ$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies.
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Submitted 7 April, 2021; v1 submitted 27 November, 2020;
originally announced November 2020.
