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Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
Authors:
Jannis Hessenauer,
Jonathan Körber,
Misagh Ghezellou,
Jawad Ul-Hassan,
Georgy V. Astakhov,
Wolfgang Knolle,
Jörg Wrachtrup,
David Hunger
Abstract:
Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate for implementing a spin-photon interface. These interfaces are an important building block of quantum networks, which in turn promise to enable secure communication and distributed quantum computing. To achieve this goal,…
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Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate for implementing a spin-photon interface. These interfaces are an important building block of quantum networks, which in turn promise to enable secure communication and distributed quantum computing. To achieve this goal, the rate of coherently scattered photons collected from a single emitter needs to be maximized, which can be achieved by interfacing the emitter with an optical cavity. In this work, we integrate V2 centers inside a SiC membrane into a fiber-based Fabry-Pérot microcavity. We find that SiC lends itself well to membrane fabrication, as evidenced by low surface roughness $σ_{\mathrm{RMS}}$ ~ 400 pm, high reproducibility, and consequentially a high cavity finesse F ~ 40 000. At cryogenic temperatures, we observe individual emitters coupling to cavity modes. We confirm their single-emitter character by measuring the second-order autocorrelation function and investigate the Purcell factor by measuring the optical lifetime as a function of the cavity-emitter detuning. We find a 13.3-fold enhancement of photons scattered into the zero-phonon line (ZPL), which could be further increased by using optimized mirror coatings, potentially opening the path towards deterministic spin-photon interaction.
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Submitted 28 March, 2025; v1 submitted 8 January, 2025;
originally announced January 2025.
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Discovery of ST2 centers in natural and CVD diamond
Authors:
Jonas Foglszinger,
Andrej Denisenko,
Georgy V. Astakhov,
Lev Kazak,
Petr Siyushev,
Alexander M. Zaitsev,
Roman Kolesov,
Jörg Wrachtrup
Abstract:
The ST2 center is an optically addressable point defect in diamond that facilitates spin initialization and readout. However, while this study presents the discovery of ST2 centers first observed in a natural diamond and provides a reliable technique for artificially creating them, its chemical structure remains unknown. To assess the potential of ST2, we map out its basic optical characteristics,…
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The ST2 center is an optically addressable point defect in diamond that facilitates spin initialization and readout. However, while this study presents the discovery of ST2 centers first observed in a natural diamond and provides a reliable technique for artificially creating them, its chemical structure remains unknown. To assess the potential of ST2, we map out its basic optical characteristics, reveal its electronic level structure, and quantify the intrinsic transition rates. Furthermore, we investigate its response to microwaves, static magnetic fields, and the polarization of excitation laser light, revealing twelve inequivalent orientations of the ST2 center. Simultaneous exposure to microwaves and static magnetic fields also reveals an exceptionally wide acceptance angle for sensing strong magnetic fields, unlike the well-established NV center, which is sensitive only within a narrow cone aligned with its symmetry axis. This finding establishes the ST2 center as a highly promising candidate for nanoscale quantum sensing.
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Submitted 31 December, 2024;
originally announced January 2025.
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Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
Authors:
M. Hollenbach,
N. Klingner,
P. Mazarov,
W. Pilz,
A. Nadzeyka,
F. Mayer,
N. V. Abrosimov,
L. Bischoff,
G. Hlawacek,
M. Helm,
G. V. Astakhov
Abstract:
Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creat…
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Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.
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Submitted 30 April, 2024;
originally announced April 2024.
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Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to t…
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The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to the symmetry axis leads to nontrivial behavior caused by dynamical reorientation of the $\mathrm{V_{Si}}$ spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole spin polarization in the excited state and appearance of the dipole spin polarization in the ground state. The latter is much higher than thermal polarization and cannot be induced solely by optical excitation. Our theoretical calculations reproduce well all sharp features in the spin resonance spectra, and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems.
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Submitted 11 April, 2024;
originally announced April 2024.
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Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing
Authors:
Roberto Rizzato,
Martin Schalk,
Stephan Mohr,
Joachim P. Leibold,
Jens C. Hermann,
Fleming Bruckmaier,
Peirui Ji,
Georgy V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Andreas V. Stier,
Jonathan J. Finley,
Dominik B. Bucher
Abstract:
Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently l…
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Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently limits its scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by nearly two orders of magnitude, approaching the fundamental $T_1$ relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.
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Submitted 24 December, 2022;
originally announced December 2022.
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Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC
Authors:
T. Vasselon,
A. Hernández-Mínguez,
M. Hollenbach,
G. V. Astakhov,
P. V. Santos
Abstract:
The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detecte…
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The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has so far remained elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances of the V1 centers, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both kinds of $\mathrm{V}_\mathrm{Si}$ centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics.
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Submitted 25 August, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Nonlinear magnon control of atomic spin defects in scalable quantum devices
Authors:
Mauricio Bejarano,
Francisco J. T. Goncalves,
Toni Hache,
Michael Hollenbach,
Christopher Heins,
Tobias Hula,
Lukas Körber,
Jakob Heinze,
Yonder Berencén,
Manfred Helm,
Jürgen Fassbender,
Georgy V. Astakhov,
Helmut Schultheiss
Abstract:
Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance o…
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Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance overlap between the magnonic system and the spin centers. Here we circumvent this challenge by harnessing nonlinear magnon scattering processes in a magnetic vortex to access magnon modes that overlap in frequency with silicon-vacancy ($\textrm{V}_{\mathrm{Si}}$) spin transitions in SiC. Our results offer a route to develop hybrid systems that benefit from marrying the rich nonlinear dynamics of magnons with the advantageous properties of SiC for scalable quantum technologies.
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Submitted 18 August, 2022;
originally announced August 2022.
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Wafer-scale nanofabrication of telecom single-photon emitters in silicon
Authors:
M. Hollenbach,
N. Klingner,
N. S. Jagtap,
L. Bischoff,
C. Fowley,
U. Kentsch,
G. Hlawacek,
A. Erbe,
N. V. Abrosimov,
M. Helm,
Y. Berencén,
G. V. Astakhov
Abstract:
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re…
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A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
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Submitted 27 April, 2022;
originally announced April 2022.
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Superradiance of Spin Defects in Silicon Carbide for Maser Applications
Authors:
Andreas Gottscholl,
Maximilian Wagenhöfer,
Manuel Klimmer,
Selina Scherbel,
Christian Kasper,
Valentin Baianov,
Georgy V. Astakhov,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy…
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Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (V$_{Si}$) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the V$_{Si}$ into their $m_S$ = $\pm$1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ~ 10$^4$ - 10$^5$) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.
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Submitted 6 May, 2022; v1 submitted 1 March, 2022;
originally announced March 2022.
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Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
Authors:
Charles Babin,
Rainer Stöhr,
Naoya Morioka,
Tobias Linkewitz,
Timo Steidl,
Raphael Wörnle,
Di Liu,
Erik Hesselmeier,
Vadim Vorobyov,
Andrej Denisenko,
Mario Hentschel,
Christian Gobert,
Patrick Berwian,
Georgy V. Astakhov,
Wolfgang Knolle,
Sridhar Majety,
Pranta Saha,
Marina Radulaski,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In par…
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Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
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Submitted 29 September, 2021; v1 submitted 10 September, 2021;
originally announced September 2021.
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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
Authors:
I. D. Breev,
Z. Shang,
A. V. Poshakinskiy,
H. Singh,
Y. Berencén,
M. Hollenbach,
S. S. Nagalyuk,
E. N. Mokhov,
R. A. Babunts,
P. G. Baranov,
D. Suter,
S. A. Tarasenko,
G. V. Astakhov,
A. N. Anisimov
Abstract:
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coheren…
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Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.
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Submitted 14 July, 2021;
originally announced July 2021.
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Acoustically induced coherent spin trapping
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that str…
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Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trapping (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices.
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Submitted 7 April, 2021;
originally announced April 2021.
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Mapping the stray fields of a nanomagnet using spin qubits in SiC
Authors:
M. Bejarano,
F. J. T. Goncalves,
M. Hollenbach,
T. Hache,
T. Hula,
Y. Berencén,
J. Fassbender,
M. Helm,
G. V. Astakhov,
H. Schultheiss
Abstract:
We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patt…
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We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.
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Submitted 1 September, 2020;
originally announced September 2020.
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Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Authors:
M. Hollenbach,
Y. Berencén,
U. Kentsch,
M. Helm,
G. V. Astakhov
Abstract:
We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the car…
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We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
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Submitted 21 August, 2020;
originally announced August 2020.
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Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the st…
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We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
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Submitted 2 May, 2020;
originally announced May 2020.
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Local vibrational modes of Si vacancy spin qubits in SiC
Authors:
Z. Shang,
A. Hashemi,
Y. Berencén,
H. -P. Komsa,
P. Erhart,
A. V. Krasheninnikov,
G. V. Astakhov
Abstract:
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacan…
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Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply the resonant microwave field to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally-separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence lineshape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine learning algorithms. This allows us to identify dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. The resonance phonon energy of 36 meV and the Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically-induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other 3D and 2D materials.
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Submitted 4 February, 2020; v1 submitted 31 January, 2020;
originally announced February 2020.
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Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
Authors:
V. A. Soltamov,
C. Kasper,
A. V. Poshakinskiy,
A. N. Anisimov,
E. N. Mokhov,
A. Sperlich,
S. A. Tarasenko,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and s…
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Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and solid-state qudits have been implemented on the basis of photonic chips and superconducting circuits, respectively. However, there is still a lack of room-temperature qudits with long coherence time and high spectral resolution. The silicon vacancy centers in silicon carbide (SiC) with spin S = 3/2 are quite promising in this respect, but until now they were treated as a canonical qubit system. Here, we apply a two-frequency protocol to excite and image multiple qudit modes in a SiC spin ensemble under ambient conditions. Strikingly, their spectral width is about one order of magnitude narrower than the inhomogeneous broadening of the corresponding spin resonance. By applying Ramsey interferometry to these spin qudits, we achieve a spectral selectivity of 600 kHz and a spectral resolution of 30 kHz. As a practical consequence, we demonstrate absolute DC magnetometry insensitive to thermal noise and strain fluctuations.
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Submitted 26 July, 2018;
originally announced July 2018.
