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Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa
Authors:
Baptiste Vindolet,
Marie-Pierre Adam,
Loïc Toraille,
Mayeul Chipaux,
Antoine Hilberer,
Géraud Dupuy,
Lukas Razinkovas,
Audrius Alkauskas,
Gergő Thiering,
Adam Gali,
Mary De Feudis,
Midrel Wilfried Ngandeu Ngambou,
Jocelyn Achard,
Alexandre Tallaire,
Martin Schmidt,
Christoph Becher,
Jean-François Roch
Abstract:
We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon…
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We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon lines by 17 THz (70 meV) and 78 THz (320 meV), respectively. These measured pressure induced shifts are in good agreement with ab initio calculations that take into account the lattice compression based on the equation of state of diamond and that are extended to the case of the tin-vacancy (SnV) center. This work provides guidance on the use of group-IV-vacancy centers as quantum sensors under extreme pressures that will exploit their specific optical and spin properties induced by their intrinsic inversion-symmetric structure.
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Submitted 29 November, 2022; v1 submitted 20 September, 2022;
originally announced September 2022.
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Photoionization of negatively charged NV centers in diamond: theory and ab initio calculations
Authors:
Lukas Razinkovas,
Marek Maciaszek,
Friedemann Reinhard,
Marcus W. Doherty,
Audrius Alkauskas
Abstract:
We present ab-initio calculations of photoionization thresholds and cross sections of the negatively charged nitrogen-vacancy (NV) center in diamond from the ground $^{3}\!A_2$ and the excited $^{3}\!E$ states. We show that after the ionization from the $^{3}\!E$ level the NV center transitions into the metastable $^{4}\!A_2$ electronic state of the neutral defect. We reveal how spin polarization…
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We present ab-initio calculations of photoionization thresholds and cross sections of the negatively charged nitrogen-vacancy (NV) center in diamond from the ground $^{3}\!A_2$ and the excited $^{3}\!E$ states. We show that after the ionization from the $^{3}\!E$ level the NV center transitions into the metastable $^{4}\!A_2$ electronic state of the neutral defect. We reveal how spin polarization of $\mathrm{NV}^{-}$ gives rise to spin polarization of the $^{4}\!A_2$ state, providing an explanation of electron spin resonance experiments. We obtain smooth photoionization cross sections by employing dense $k$-point meshes for the Brillouin zone integration together with the band unfolding technique to rectify the distortions of the band structure induced by artificial periodicity of the supercell approach. Our calculations provide a comprehensive picture of photoionization mechanisms of $\mathrm{NV}^{-}$. They will be useful in interpreting and designing experiments on charge-state dynamics at NV centers. In particular, we offer a consistent explanation of recent results of spin-to-charge conversion of NV centers.
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Submitted 20 April, 2021; v1 submitted 19 April, 2021;
originally announced April 2021.
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Vibrational and vibronic structure of isolated point defects: the nitrogen-vacancy center in diamond
Authors:
Lukas Razinkovas,
Marcus W. Doherty,
Neil B. Manson,
Chris G. Van de Walle,
Audrius Alkauskas
Abstract:
We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by cons…
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We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by constructing dynamical matrices of large supercells containing tens of thousands of atoms. The main goal of the paper is to calculate luminescence and absorption lineshapes due to coupling to vibrational degrees of freedom. The coupling to symmetric $a_1$ modes is computed via the Huang-Rhys theory. Importantly, to include a nontrivial contribution of $e$ modes we develop an effective methodology to solve the multi-mode $E \otimes e$ Jahn-Teller problem. Our results show that for NV centers in diamond a proper treatment of $e$ modes is particularly important for absorption. We obtain good agreement with experiment for both luminescence and absorption. Finally, the remaining shortcomings of the theoretical approach are critically reviewed. The presented theoretical approach will benefit identification and future studies of point defects in solids.
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Submitted 6 August, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Spin coherent quantum transport of electrons between defects in diamond
Authors:
Lachlan M Oberg,
Eric Huang,
Prithvi M Reddy,
Audrius Alkauskas,
Andrew D Greentree,
Jared H Cole,
Neil B Manson,
Carlos A Meriles,
Marcus W Doherty
Abstract:
The nitrogen-vacancy color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. While individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires development of an on-chip quantum bus for transporting information between distant qubits. Here we propose a method…
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The nitrogen-vacancy color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. While individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires development of an on-chip quantum bus for transporting information between distant qubits. Here we propose a method for coherent quantum transport of an electron and its spin state between distant NV centers. Transport is achieved by the implementation of spatial stimulated adiabatic Raman passage through the optical control of the NV center charge states and the confined conduction states of a diamond nanostructure. Our models show that for two NV centers in a diamond nanowire, high fidelity transport can be achieved over distances of order hundreds of nanometres in timescales of order hundreds of nanoseconds. Spatial adiabatic passage is therefore a promising option for realizing an on-chip spin quantum bus.
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Submitted 16 May, 2019;
originally announced May 2019.
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Protecting a diamond quantum memory by charge state control
Authors:
Matthias Pfender,
Nabeel Aslam,
Patrick Simon,
Denis Antonov,
Gergő Thiering,
Sina Burk,
Felipe Fávaro de Oliveira,
Andrej Denisenko,
Helmut Fedder,
Jan Meijer,
Jose Antonio Garrido,
Adam Gali,
Tokuyuki Teraji,
Junichi Isoya,
Marcus William Doherty,
Audrius Alkauskas,
Alejandro Gallo,
Andreas Grüneis,
Philipp Neumann,
Jörg Wrachtrup
Abstract:
In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its n…
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In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its nuclear spins can yield exceedingly long spin coherence times. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 20. Surprisingly, the new charge state allows switching the optical response of single nodes facilitating full individual addressability.
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Submitted 6 February, 2017;
originally announced February 2017.
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Vibrational modes of negatively charged silicon-vacancy centers in diamond from ab initio calculations
Authors:
Elisa Londero,
Gergő Thiering,
Lukas Razinkovas,
Adam Gali,
Audrius Alkauskas
Abstract:
Silicon-vacancy (SiV) center in diamond is a photoluminescence (PL) center with a characteristic zero-phonon line energy at 1.681 eV that acts as a solid-state single photon source and, potentially, as a quantum bit. The majority of the luminescence intensity appears in the zero-phonon line; nevertheless, about 30\% of the intensity manifests in the phonon sideband. Since phonons play an essential…
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Silicon-vacancy (SiV) center in diamond is a photoluminescence (PL) center with a characteristic zero-phonon line energy at 1.681 eV that acts as a solid-state single photon source and, potentially, as a quantum bit. The majority of the luminescence intensity appears in the zero-phonon line; nevertheless, about 30\% of the intensity manifests in the phonon sideband. Since phonons play an essential role in the operation of this system, it is of importance to understand the vibrational properties of the SiV center in detail. To this end, we carry out density functional theory calculations of dilute SiV centers by embedding the defect in supercells of a size of a few thousand atoms. We find that there exist two well-pronounced quasi-local vibrational modes (resonances) with $A_{2u}$ and $E_u$ symmetries, corresponding to the vibration of the Si atom along and perpendicular to the defect symmetry axis, respectively. Isotopic shifts of these modes explain the isotopic shifts of prominent vibronic features in the experimental SiV PL spectrum. Moreover, calculations show that the vibrational frequency of the $A_{2u}$ mode increases by about 30\% in the excited state with respect to the ground state, while the frequency of the $E_u$ mode increases by about 5\%. These changes explain experimentally observed isotopic shifts of the zero-phonon line energy. We also emphasize possible dangers of extracting isotopic shifts of vibrational resonances from finite-size supercell calculations, and instead propose a method to do this correctly.
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Submitted 30 July, 2021; v1 submitted 10 May, 2016;
originally announced May 2016.
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Towards a room-temperature spin quantum bus in diamond via optical spin injection, transport and detection
Authors:
Marcus W. Doherty,
Carlos A. Meriles,
Audrius Alkauskas,
Helmut Fedder,
Matthew J. Sellars,
Neil B. Manson
Abstract:
Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy (NV) center in diamond has been used to realize small-scale quantum information processing (QIP) and quantum sensing under ambient conditions. A major barrier in the development of large-scale QIP in diamond is the connection of NV spin registers by a quantum bus at room temperature. Given that diamond…
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Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy (NV) center in diamond has been used to realize small-scale quantum information processing (QIP) and quantum sensing under ambient conditions. A major barrier in the development of large-scale QIP in diamond is the connection of NV spin registers by a quantum bus at room temperature. Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution. Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods. Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to achieve spin injection, transport and detection in diamond at room temperature. Having identified these mechanisms, we explore how they may be combined to realise an on-chip spin quantum bus.
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Submitted 27 November, 2015;
originally announced November 2015.
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Measurement and Control of Single Nitrogen-Vacancy Center Spins above 600 K
Authors:
D. M. Toyli,
D. J. Christle,
A. Alkauskas,
B. B. Buckley,
C. G. Van de Walle,
D. D. Awschalom
Abstract:
We study the spin and orbital dynamics of single nitrogen-vacancy (NV) centers in diamond between room temperature and 700 K. We find that the ability to optically address and coherently control single spins above room temperature is limited by nonradiative processes that quench the NV center's fluorescence-based spin readout between 550 and 700 K. Combined with electronic structure calculations,…
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We study the spin and orbital dynamics of single nitrogen-vacancy (NV) centers in diamond between room temperature and 700 K. We find that the ability to optically address and coherently control single spins above room temperature is limited by nonradiative processes that quench the NV center's fluorescence-based spin readout between 550 and 700 K. Combined with electronic structure calculations, our measurements indicate that the energy difference between the 3E and 1A1 electronic states is approximately 0.8 eV. We also demonstrate that the inhomogeneous spin lifetime (T2*) is temperature independent up to at least 625 K, suggesting that single NV centers could be applied as nanoscale thermometers over a broad temperature range.
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Submitted 16 July, 2012; v1 submitted 20 January, 2012;
originally announced January 2012.
