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Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing
Authors:
Xiaomo Xu,
Thomas Prüfer,
Daniel Wolf,
Hans-Jürgen Engelmann,
Lothar Bischoff,
René Hübner,
Karl-Heinz Heinig,
Wolfhard Möller,
Stefan Facsko,
Johannes von Borany,
Gregor Hlawacek
Abstract:
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kine…
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For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam.
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Submitted 10 October, 2019;
originally announced October 2019.
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Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm
Authors:
Xiaomo Xu,
Karl-Heinz Heinig,
Wolfhard Möller,
Hans-Jürgen Engelmann,
Nico Klingner,
Ahmed Gharbi,
Raluca Tiron,
Johannes von Borany,
Gregor Hlawacek
Abstract:
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dyna…
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Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing. While at room temperature, the nanopillars evolve to a conical shape due to ion-induced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of 10 nm in a well-controlled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation.
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Submitted 1 October, 2019; v1 submitted 24 June, 2019;
originally announced June 2019.
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Road to micron resolution with a color X-ray camera -- polycapillary optics characterization
Authors:
Stanisław H. Nowak,
Marko Petric,
Josef Buchriegler,
Aniouar Bjeoumikhov,
Zemfira Bjeoumikhov,
Johannes von Borany,
Frans Munnik,
Martin Radtke,
Axel D. Renno,
Uwe Reinholz,
Oliver Scharf,
Joachim Tilgner,
Reiner Wedell
Abstract:
In a color X-ray camera, spatial resolution is achieved by means of a polycapillary optic conducting X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD matrix. At present, the resolution limit of color X-ray camera systems can go down to several microns and is mainly restricted to pixel dimensions. The recent development of an efficient subpixel resolution a…
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In a color X-ray camera, spatial resolution is achieved by means of a polycapillary optic conducting X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD matrix. At present, the resolution limit of color X-ray camera systems can go down to several microns and is mainly restricted to pixel dimensions. The recent development of an efficient subpixel resolution algorithm allows a release from pixel size, limiting the resolution only to the quality of the optics. In this work polycapillary properties that influence the spatial resolution are systematized and assessed both theoretically and experimentally. It is demonstrated that with the current technological level reaching one micron resolution is challenging, but possible.
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Submitted 24 May, 2017;
originally announced May 2017.
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Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry
Authors:
Nico Klingner,
René Heller,
Gregor Hlawacek,
Johannes von Borany,
John Notte,
Jason Huang,
Stefan Facsko
Abstract:
Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of $\leq$ 54 nm and a time resolution of $Δt \leq$ 17 ns $(Δt/t \leq 5.4\%)$ are achieved. By using the energy of the back…
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Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of $\leq$ 54 nm and a time resolution of $Δt \leq$ 17 ns $(Δt/t \leq 5.4\%)$ are achieved. By using the energy of the backscattered particles for contrast generation, we introduce a new imaging method to the HIM allowing direct elemental mapping as well as local spectrometry. In addition laterally resolved time of flight secondary ion mass spectrometry (ToF-SIMS) can be performed with the same setup. Time of flight is implemented by pulsing the primary ion beam. This is achieved in a cost effective and minimal invasive way that does not influence the high resolution capabilities of the microscope when operating in standard secondary electron (SE) imaging mode. This technique can thus be easily adapted to existing devices. The particular implementation of ToF-BS and ToF-SIMS techniques are described, results are presented and advantages, difficulties and limitations of this new techniques are discussed.
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Submitted 30 November, 2015; v1 submitted 15 October, 2015;
originally announced October 2015.
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Sub-pixel resolution with color X-ray camera SLcam(R)
Authors:
Stanisław H. Nowak,
Aniouar Bjeoumikhov,
Johannes von Borany,
Josef Buchriegler,
Frans Munnik,
Marko Petric,
Martin Radtke,
Axel D. Renno,
Uwe Reinholz,
Oliver Scharf,
Reiner Wedell
Abstract:
The color X-ray camera SLcam(R) is a full-field, single photon detector providing scanning free, energy and spatially resolved X-ray imaging. Spatial resolution is achieved with the use of polycapillary optics guiding X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD. Applying sub-pixel resolution, signals from individual capillary channels can be distingui…
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The color X-ray camera SLcam(R) is a full-field, single photon detector providing scanning free, energy and spatially resolved X-ray imaging. Spatial resolution is achieved with the use of polycapillary optics guiding X-ray photons from small regions on a sample to distinct energy dispersive pixels on a CCD. Applying sub-pixel resolution, signals from individual capillary channels can be distinguished. Accordingly the SLcam(R) spatial resolution can be released from pixel size being confined rather to a diameter of individual polycapillary channels. In this work a new approach to sub-pixel resolution algorithm comprising photon events also from the pixel centers is proposed. The details of the employed numerical method and several sub-pixel resolution examples are presented and discussed.
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Submitted 27 January, 2015;
originally announced January 2015.
