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Efficiency enhancement in regenerative amplifier free-electron lasers using a tapered undulator
Authors:
Henry Freund,
Peter van der Slot,
Patrick O'Shea
Abstract:
Recent progress in short wavelength free-electron lasers extending from the extreme ultraviolet through the x-ray regime have opened new avenues for industrial and research applications. A high-gain/low-Q oscillator, i.e., a regenerative amplifier free-electron laser (RAFEL), is one possible concept. In this paper, we present the first analysis of efficiency enhancement in a RAFEL with a long, tap…
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Recent progress in short wavelength free-electron lasers extending from the extreme ultraviolet through the x-ray regime have opened new avenues for industrial and research applications. A high-gain/low-Q oscillator, i.e., a regenerative amplifier free-electron laser (RAFEL), is one possible concept. In this paper, we present the first analysis of efficiency enhancement in a RAFEL with a long, tapered undulator line. For the present analysis, we consider a high average power EUV RAFEL at 13.5 nm and show that the performance exceeds that of single-pass, tapered self-amplified spontaneous emission. This points the way to high power tapered undulator x-ray RAFELs.
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Submitted 3 January, 2025;
originally announced January 2025.
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Physical mode analysis of multimode cascaded nonlinear processes in strongly-coupled waveguides
Authors:
Lisi Xia,
Peter J. M. van der Slot,
Chris Toebes,
Klaus -J. Boller
Abstract:
We experimentally investigate on-chip control and analysis of spatially multimode nonlinear interactions in silicon nitride waveguide circuits. Using widely different dispersion of transverse supermodes in a strongly-coupled dual-core waveguide section, and using integrated pairs of input and output single-mode waveguides, we enable controlled excitation of nonlinear processes in multiple supermod…
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We experimentally investigate on-chip control and analysis of spatially multimode nonlinear interactions in silicon nitride waveguide circuits. Using widely different dispersion of transverse supermodes in a strongly-coupled dual-core waveguide section, and using integrated pairs of input and output single-mode waveguides, we enable controlled excitation of nonlinear processes in multiple supermodes, while a basic physical mode decomposition aids the identification of parallel and cascaded processes. Pumping with ultrashort pulses at 1.5-$μ$m wavelength (around 195-THz light frequency), we observe simultaneous dual-supermode, near-infrared supercontinuum generation having different spectral widths, in parallel with third-harmonic generation at around 515 nm (582 THz). Cascaded four-wave mixing with supercontinuum components upconverts the third-harmonic radiation toward a set of four shorter blue wavelengths emitted in the range between 485 and 450 nm (617 to 661 THz). The approach taken here, i.e., using chip-integrated spatial multiplexing and demultiplexing for excitation and analysis of broadband transverse nonlinear conversion, can be an advanced tool for better understanding and control in multimode nonlinear optics, such as for extending frequency conversion to wider spectral ranges via extra phase matching paths.
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Submitted 4 November, 2024; v1 submitted 31 October, 2024;
originally announced October 2024.
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Surface acoustic waves Brillouin photonics on a silicon nitride chip
Authors:
Yvan Klaver,
Randy te Morsche,
Roel A. Botter,
Batoul Hashemi,
Bruno L. Segat Frare,
Akhileshwar Mishra,
Kaixuan Ye,
Hamidu Mbonde,
Pooya Torab Ahmadi,
Niloofar Majidian Taleghani,
Evan Jonker,
Redlef B. G. Braamhaar,
Ponnambalam Ravi Selvaganapathy,
Peter Mascher,
Peter J. M. van der Slot,
Jonathan D. B. Bradley,
David Marpaung
Abstract:
Seamlessly integrating stimulated Brillouin scattering (SBS) in a low-loss and mature photonic integration platform remains a complicated task. Virtually all current approaches fall short in simultaneously achieving strong SBS, low losses, and technological scalability. In this work we incorporate stong SBS into a standard silicon nitride platform by a simple deposition of a tellurium oxide layer,…
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Seamlessly integrating stimulated Brillouin scattering (SBS) in a low-loss and mature photonic integration platform remains a complicated task. Virtually all current approaches fall short in simultaneously achieving strong SBS, low losses, and technological scalability. In this work we incorporate stong SBS into a standard silicon nitride platform by a simple deposition of a tellurium oxide layer, a commonly used material for acousto-optic modulators. In these heterogeneously integrated waveguides, we harness novel SBS interactions actuated by surface acoustic waves (SAWs) leading to more than two orders of magnitude gain enhancement. Three novel applications are demonstrated in this platform: (i) a silicon nitride Brillouin amplifier with 5 dB net optical gain, (ii) a compact intermodal stimulated Brillouin laser (SBL) capable of high purity radio frequency (RF) signal generation with 7 Hz intrinsic linewidth, and (iii) a widely tunable microwave photonic notch filter with ultra-narrow linewidth of 2.2 MHz enabled by Brillouin induced opacity. These advancements can unlock an array of new RF and optical technologies to be directly integrated in silicon nitride.
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Submitted 21 October, 2024;
originally announced October 2024.
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Chip-integrated extended-cavity mode-locked laser in the visible
Authors:
Lisa V. Winkler,
Govert Neijts,
Hubertus J. M. Bastiaens,
Melissa J. Goodwin,
Albert van Rees,
Philip P. J. Schrinner,
Marcel Hoekman,
Ronald Dekker,
Adriano R. do Nascimento Jr.,
Peter J. M. van der Slot,
Christian Nölleke,
Klaus-J. Boller
Abstract:
Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented…
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Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented the realization of such lasers in the visible range. Here, we demonstrate the first chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber implemented by focused ion beam milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz.
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Submitted 9 September, 2024;
originally announced September 2024.
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Integrated diode lasers for the generation of sub-GHz repetition rate frequency combs
Authors:
Anzal Memon,
Albert van Rees,
Jesse Mak,
Youwen Fan,
Peter van der Slot,
Hubertus Bastiaens,
Klaus-J Boller
Abstract:
We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates using a hybrid integrated extended cavity diode laser around 1550 nm. The laser is based on InP as gain medium and a long Si$_3$N$_4$ feedback circuit, with three highly frequency selective microring resonators. The feedback resonators not only increases the cavity length up to 0.6 m to achieve sub-GHz repetit…
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We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates using a hybrid integrated extended cavity diode laser around 1550 nm. The laser is based on InP as gain medium and a long Si$_3$N$_4$ feedback circuit, with three highly frequency selective microring resonators. The feedback resonators not only increases the cavity length up to 0.6 m to achieve sub-GHz repetition rates but also serve as a dispersive narrowband mirror for sharp spectral filtering, which enables Fourier domain mode-locking. We observe passive mode-locking with repetition rates below 500 MHz, with $\approx$ 15 comb lines at around 0.2 mW total power. To stabilize the repetition rate, hybrid mode-locking is demonstrated by weak RF modulation of the diode current at frequencies around 500 MHz. The RF injection reduces the Lorentzian linewidth component from 8.9 kHz to a detection limited value around 300 mHz. To measure the locking range of the repetition rate, the injected RF frequency is tuned with regard to the passive mode-locking frequency and the injected RF power is varied. The locking range increases approximately as a square-root function of the injected RF power. At 1 mW injection a wide locking range of about 80 MHz is obtained. We observe the laser maintaining stable mode-locking also when the DC diode pump current is increased from 40 mA to 190 mA, provided that the cavity length is maintained constant with thermo-refractive tuning.
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Submitted 30 May, 2024;
originally announced May 2024.
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Widely-tunable and narrow-linewidth hybrid-integrated diode laser at 637 nm
Authors:
Lisa V. Winkler,
Kirsten Gerritsma,
Albert van Rees,
Philip P. J. Schrinner,
Marcel Hoekman,
Ronald Dekker,
Adriano R. do Nascimento Jr.,
Peter J. M. van der Slot,
Christian Nölleke,
Klaus-J. Boller
Abstract:
We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of HeNe lasers (633 nm). The lasers provide wide mode-hop free tuning up to 97 GHz and a narrow intrinsic linewidth down to 10 kHz. The maximum output power is 2.…
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We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of HeNe lasers (633 nm). The lasers provide wide mode-hop free tuning up to 97 GHz and a narrow intrinsic linewidth down to 10 kHz. The maximum output power is 2.5 mW in a single-mode fiber, corresponding to an on-chip power of 4.0 mW. Full integration and packaging in a standard housing with fiber pigtails provide high intrinsic stability and will enable integration into complex optical systems.
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Submitted 8 April, 2024;
originally announced April 2024.
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Wakefields In Superconducting RF Cavities and The Impact on VUV Free-electron Laser Oscillator Performance
Authors:
Alex H. Lumpkin,
Henry P. Freund,
Matthias Reinsch,
Peter J. M. van der Slot
Abstract:
The Fermilab Accelerator Science and Technology (FAST) facility is currently in operation with its linac based on TESLA-type superconducting rf cavities. Using a 3-MHz micropulse repetition rate with a long macropulse composed of up to 3000 micropulses, and with beam energies demonstrated at 300 MeV and projected to reach 800 MeV with two additional cryomodules, the feasibilities for a vacuum ultr…
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The Fermilab Accelerator Science and Technology (FAST) facility is currently in operation with its linac based on TESLA-type superconducting rf cavities. Using a 3-MHz micropulse repetition rate with a long macropulse composed of up to 3000 micropulses, and with beam energies demonstrated at 300 MeV and projected to reach 800 MeV with two additional cryomodules, the feasibilities for a vacuum ultraviolet (VUV) and an extreme ultraviolet (EUV) free-electron laser oscillator (FELO) with the two energies are evaluated. We have used both the GINGER code with an oscillator module and the MINERVA/OPC code to assess FELO saturation prospects at 120 nm with a 5.0-cm-period undulator of 4.5-m length and the MINERVA/OPC code to assess the FELO at 13.4 nm with adjusted parameters. The simulation results support saturation at both of these wavelengths which are much shorter than the demonstrated shortest wavelength record of 168.6 nm from a storage-ring-based FELO. This indicates superconducting rf linac-driven FELOs can be extended into this VUV-EUV wavelength regime previously only reached with single-pass FEL configurations. In addition, emittance-dilution effects due to wakefields in the cavities and the resulting sub-macropulse centroid slew effects on FELO performance are addressed using MINERVA/OPC simulations for the first time.
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Submitted 20 October, 2023;
originally announced October 2023.
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On-Chip Phase-Shift Induced Control of Supercontinuum Generation in a Dual-Core Si$\mathbf{_{3}}$N$\mathbf{_{4}}$ Waveguide
Authors:
Lisi Xia,
Peter J. M. van der Slot,
Maximilian Timmerkamp,
Bert Bastiaens,
Carsten Fallnich,
Klaus J. Boller
Abstract:
We investigate on-chip spectral control of supercontinuum generation, taking advantage of the additional spatial degree of freedom in strongly-coupled dual-core waveguides. Using numerical integration of the multi-mode generalized nonlinear Schrödinger equation, we show that, with proper waveguide cross-section design, selective excitation of supermodes can vary the dispersion to its extremes, i.e…
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We investigate on-chip spectral control of supercontinuum generation, taking advantage of the additional spatial degree of freedom in strongly-coupled dual-core waveguides. Using numerical integration of the multi-mode generalized nonlinear Schrödinger equation, we show that, with proper waveguide cross-section design, selective excitation of supermodes can vary the dispersion to its extremes, i.e., all-normal or anomalous dispersion can be selected via phase shifting in a Mach-Zehnder input circuit. The resulting control allows to provide vastly different supercontinuum spectra with the same waveguide circuit.
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Submitted 8 July, 2023;
originally announced July 2023.
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Long-term absolute frequency stabilization of a hybrid-integrated InP-Si3N4 diode laser
Authors:
Albert van Rees,
Lisa V. Winkler,
Pierre Brochard,
Dimitri Geskus,
Peter J. M. van der Slot,
Christian Nölleke,
Klaus-J. Boller
Abstract:
Hybrid integrated diode lasers based on combining semiconductor optical amplifiers with low-loss Si3N4-based feedback circuits enable great laser performance for advanced photonic circuits. In particular, using high-Q Si3N4 ring resonators for frequency-selective feedback provides wide spectral coverage, mode-hop free tuning, and high frequency stability on short timescales, showing as ultra-narro…
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Hybrid integrated diode lasers based on combining semiconductor optical amplifiers with low-loss Si3N4-based feedback circuits enable great laser performance for advanced photonic circuits. In particular, using high-Q Si3N4 ring resonators for frequency-selective feedback provides wide spectral coverage, mode-hop free tuning, and high frequency stability on short timescales, showing as ultra-narrow intrinsic linewidths. However, many applications also require long-term stability, which can be provided by locking the laser frequency to a suitable reference. We present the stabilization of a hybrid-integrated laser, which is widely tunable around the central wavelength of 1550 nm, to a fiber-based optical frequency discriminator (OFD) and to an acetylene absorption line. By locking the laser to the OFD, the laser's fractional frequency stability is improved down to 2.1$\cdot$10$^{-12}$ over an averaging time of 0.5 ms. For absolute stability over longer times of several days, we successfully lock the laser frequency to an acetylene absorption line. This limits the frequency deviations of the laser to a range of less than 12 MHz over 5 days.
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Submitted 24 May, 2023; v1 submitted 24 February, 2023;
originally announced February 2023.
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Hybrid integrated near UV lasers using the deep-UV Al2O3 platform
Authors:
C. A. A. Franken,
W. A. P. M. Hendriks,
L. V. Winkler,
M. Dijkstra,
A. R. do Nascimento Jr,
A. van Rees,
M. R. S. Mardani,
R. Dekker,
J. van Kerkhof,
P. J. M. van der Slot,
S. M. García-Blanco,
K. -J. Boller
Abstract:
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable…
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Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
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Submitted 22 February, 2023;
originally announced February 2023.
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Considerations on wakefield effects in a VUV FELO driven by a superconducting tesla-type linac
Authors:
Alex H. Lumpkin,
Henry P. Freund,
Peter Van der Slot
Abstract:
The effects on beam dynamics from long-range and short-range wakefields from TESLA-type cavities are considered in regard to a proposed FEL oscillator (FE-LO) operating at 120 nm. This would be driven by the Fermilab Accelerator Science and Technology (FAST) linac at 300 MeV with a 3-MHz micropulse repetition rate. Our wakefield studies showed measurable effects on submacropulse centroid stability…
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The effects on beam dynamics from long-range and short-range wakefields from TESLA-type cavities are considered in regard to a proposed FEL oscillator (FE-LO) operating at 120 nm. This would be driven by the Fermilab Accelerator Science and Technology (FAST) linac at 300 MeV with a 3-MHz micropulse repetition rate. Our wakefield studies showed measurable effects on submacropulse centroid stability and on submicropulse head-tail kicks that can lead to emittance degradation. In the case of the former, we use MINERVA/OPC to simulate the ~100-$μ$m centroid slew effects on the saturated output power levels of the FELO.
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Submitted 24 August, 2022;
originally announced August 2022.
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Guided-Acoustic Stimulated Brillouin Scattering in Silicon Nitride Photonic Circuits
Authors:
Roel Botter,
Kaixuan Ye,
Yvan Klaver,
Radius Suryadharma,
Okky Daulay,
Gaojian Liu,
Jasper van den Hoogen,
Lou Kanger,
Peter van der Slot,
Edwin Klein,
Marcel Hoekman,
Chris Roeloffzen,
Yang Liu,
David Marpaung
Abstract:
Coherent optomechanical interaction between acoustic and optical waves known as stimulated Brillouin scattering (SBS) can enable ultra-high resolution signal processing and narrow linewidth lasers important for next generation wireless communications, precision sensing, and quantum information processing. While SBS has recently been studied extensively in integrated waveguides, many implementation…
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Coherent optomechanical interaction between acoustic and optical waves known as stimulated Brillouin scattering (SBS) can enable ultra-high resolution signal processing and narrow linewidth lasers important for next generation wireless communications, precision sensing, and quantum information processing. While SBS has recently been studied extensively in integrated waveguides, many implementations rely on complicated fabrication schemes, using suspended waveguides, or non-standard materials such as As$_2$S$_3$. The absence of SBS in standard and mature fabrication platforms prevents large-scale circuit integration and severely limits the potential of this technology. Notably, SBS in standard silicon nitride integration platform is currently rendered out of reach due to the lack of acoustic guiding and the infinitesimal photo-elastic response of the material. In this paper, we experimentally demonstrate advanced control of backward SBS in multilayer silicon nitride waveguides. By optimizing the separation between two silicon nitride layers, we unlock gigahertz acoustic waveguiding in this platform for the first time, leading up to 15 $\times$ higher SBS gain coefficient than previously possible in silicon nitride waveguides. Using the same principle, we experimentally demonstrate on-demand inhibition of SBS by preventing acoustic guiding in the waveguide platform. We utilize the enhanced SBS gain to demonstrate a microwave photonic notch filter with high rejection (30 dB). We accomplish this in a low-loss, standard, and versatile silicon nitride integration platform without the need of suspending the SBS-active waveguide or hybrid integration with other materials.
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Submitted 15 February, 2022; v1 submitted 1 December, 2021;
originally announced December 2021.
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Three-dimensional, time-dependent analysis of high- and low-Q free-electron laser oscillators
Authors:
Peter J. M. van der Slot,
Henry P. Freund
Abstract:
Free-electron lasers (FELs) have been designed to operate over virtually the entire electromagnetic spectrum from microwaves through x-rays and in a variety of configurations including amplifiers and oscillators. Oscillators can operate in both the low and high gain regime and are typically used to improve the spatial and temporal coherence of the light generated. We will discuss various FEL oscil…
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Free-electron lasers (FELs) have been designed to operate over virtually the entire electromagnetic spectrum from microwaves through x-rays and in a variety of configurations including amplifiers and oscillators. Oscillators can operate in both the low and high gain regime and are typically used to improve the spatial and temporal coherence of the light generated. We will discuss various FEL oscillators ranging from systems with high-quality resonators combined with low-gain undulators to systems with a low-quality resonator combined with a high-gain undulator line. The FEL gain code MINERVA and wavefront propagation code OPC are used to model the FEL interaction within the undulator and the propagation in the remainder of the oscillator, respectively. We will not only include experimental data for the various systems for comparison when available, but also present for selected cases how the two codes can be used to study the effect of mirror aberrations and thermal mirror deformation on FEL performance.
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Submitted 6 May, 2021;
originally announced May 2021.
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Variable Polarization Control in Free-Electron Lasers
Authors:
H. P. Freund,
P. J. M. van der Slot
Abstract:
Free-electron lasers (FELs) over virtually the entire electromagnetic spectrum from microwaves through ultraviolet through hard x-rays that are either seeded or start from noise. FELs can produce a variety of different optical polarizations of the output radiation ranging from linear through elliptic to circular polarization depending upon the characteristics of the undulators used. For example, x…
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Free-electron lasers (FELs) over virtually the entire electromagnetic spectrum from microwaves through ultraviolet through hard x-rays that are either seeded or start from noise. FELs can produce a variety of different optical polarizations of the output radiation ranging from linear through elliptic to circular polarization depending upon the characteristics of the undulators used. For example, x-ray FELs use long undulator lines composed of a series of relatively short undulators. Most such FELs use linearly polarized undulators due to the ease of manufacture and tuning; hence the optical output is linearly polarized. However, elliptic or circular polarizations are possible by varying the orientation of the undulators along the line. Alternately, APPLE-II or Delta undulator designs allow for producing undulating magnetic fields with arbitrary polarizations. Here, we present a three-dimensional, time-dependent formulation that self-consistently models two independent optical polarizations and, therefore, completely treats any given sequence or combination of undulator, undulator imperfections, and undulator degradation There are two principal characteristics of the formulation that underpin this capability. In the first place, the particle trajectories are integrated by means of the full Lorentz force equations using three-dimensional analytic models of the undulators fields. This permits an accurate model of the interaction of the electrons with a large variety of undulator fields and orientations. In the second place, the formulation allows the electrons to couple simultaneously to two independent polarizations of the electromagnetic wave and, therefore, allows the optical polarization to evolve self-consistently along the undulator line. After first describing the numerical model, we proceed to give some examples using different undulator configurations that are of interest.
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Submitted 16 December, 2020;
originally announced December 2020.
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High-purity microwave generation using a dual-frequency hybrid integrated semiconductor-dielectric waveguide laser
Authors:
Jesse Mak,
Albert van Rees,
Rob E. M. Lammerink,
Dimitri Geskus,
Youwen Fan,
Peter J. M. van der Slot,
Chris G. H. Roeloffzen,
Klaus-J. Boller
Abstract:
We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $μ$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long,…
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We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $μ$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long, low-loss silicon nitride (Si$_3$N$_4$) feedback circuit to extend the cavity photon lifetime, resulting in a cavity optical roundtrip length of about 30 cm on a chip. Simultaneous lasing at two frequencies is enabled by introducing an external control parameter for balancing the feedback from two tunable, frequency-selective Vernier mirrors on the Si$_3$N$_4$ chip. Each frequency can be tuned with a wavelength coverage of about 80 nm, potentially allowing for the generation of a broad range of frequencies in the microwave range up to the THz range.
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Submitted 24 November, 2020;
originally announced December 2020.
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A hybrid-integrated diode laser in the visible spectral range
Authors:
Cornelis A. A. Franken,
Albert van Rees,
Lisa V. Winkler,
Youwen Fan,
Dimitri Geskus,
Ronald Dekker,
Douwe H. Geuzebroek,
Carsten Fallnich,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss Si3N4 feedback circuit based on micr…
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Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss Si3N4 feedback circuit based on microring resonators, we obtain a spectral coverage of 10.8 nm around 684.4 nm wavelength with up to 4.8 mW output power. The measured intrinsic linewidth is 2.3$\pm$0.2 kHz.
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Submitted 14 June, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Analysis of Ultra-Short Bunches in Free-Electron Lasers
Authors:
Lawrence Campbell,
Henry Freund,
James Henderson,
Brian McNeil,
Piotr Traczykowski,
Peter van der Slot
Abstract:
Free-electron lasers (FELs) operate at wavelengths from millimeter waves through hard x-rays. At x-ray wavelengths, FELs typically rely on self-amplified spontaneous emission (SASE). Typical SASE emission contains multiple temporal "spikes" which limit the longitudinal coherence of the optical output; hence, alternate schemes that improve on the longitudinal coherence of the SASE emission are of i…
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Free-electron lasers (FELs) operate at wavelengths from millimeter waves through hard x-rays. At x-ray wavelengths, FELs typically rely on self-amplified spontaneous emission (SASE). Typical SASE emission contains multiple temporal "spikes" which limit the longitudinal coherence of the optical output; hence, alternate schemes that improve on the longitudinal coherence of the SASE emission are of interest. In this paper, we consnider electron bunches that are shorter than the SASE spike separation. In such cases, the spontaneously generated radiation consists of a single optical pulse with better longitudinal coherence than is found in typical SASE FELs. To investigate this regime, we use two FEL simulation codes. One (MINERVA) uses the slowly-varying envelope approximation(SVEA) which breaks down for extremely short pulses. The second (PUFFIN) is a particle-in-cell (PiC) simulation code that is considered to be a more complete model of the underlying physics and which is able to simulate very short pulses. We first anchor these codes by showing that there is substantial agreement between the codes in simulation of the SPARC SASE FEL experiment at ENEA Frascati. We then compare the two codes for simulations using electron bunch lengths that are shorter than the SASE slice separation. The comparisons between the two codes for short bunch simulations elucidate the limitations of the SVEA in this regime but indicate that the SVEA can treat short bunches that are comparable to the cooperation length.
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Submitted 30 March, 2020;
originally announced March 2020.
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Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser
Authors:
Albert van Rees,
Youwen Fan,
Dimitri Geskus,
Edwin J. Klein,
Ruud M. Oldenbeuving,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. W…
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Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity.
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Submitted 19 December, 2019;
originally announced December 2019.
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Hybrid integrated semiconductor lasers with silicon nitride feedback circuits
Authors:
Klaus-J. Boller,
Albert van Rees,
Youwen Fan,
Jesse Mak,
Rob E. M. Lammerink,
Cornelis A. A. Franken,
Peter J. M. van der Slot,
David A. I. Marpaung,
Carsten Fallnich,
Jörn P. Epping,
Ruud M. Oldenbeuving,
Dimitri Geskus,
Ronald Dekker,
Ilka Visscher,
Robert Grootjans,
Chris G. H. Roeloffzen,
Marcel Hoekman,
Edwin J. Klein,
Arne Leinse,
René G. Heideman
Abstract:
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level i…
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Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
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Submitted 18 December, 2019; v1 submitted 25 November, 2019;
originally announced November 2019.
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Ultra-narrow linewidth hybrid integrated semiconductor laser
Authors:
Youwen Fan,
Albert van Rees,
Peter J. M. van der Slot,
Jesse Mak,
Ruud Oldenbeuving,
Marcel Hoekman,
Dimitri Geskus,
Chris G. H. Roeloffzen,
Klaus-J. Boller
Abstract:
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limita…
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We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 $μ$m wavelength range with 3 mW output, and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution.
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Submitted 13 July, 2020; v1 submitted 17 October, 2019;
originally announced October 2019.
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Comparison Between, and Validation Against an Experiment of, a Slowly-Varying Envelope Approximation Code and a Particle-in-Cell Simulation Code for Free-Electron Lasers
Authors:
L. T. Campbell,
H. P. Freund,
J. Henderson,
B. W. J. McNeil,
P. Traczykowski,
P. J. M. van der Slot
Abstract:
Free-electron lasers (FELs) operate at wavelengths down to hard x-rays, and are either seeded or start from noise. There is increasing interest in x-ray FELs that rely on Self-Amplified Spontaneous Emission (SASE), and this involves increasing simulation activity in the design, optimization, and characterization of these x-ray FELs. Most of the simulation codes in use rely on the Slowly-Varying En…
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Free-electron lasers (FELs) operate at wavelengths down to hard x-rays, and are either seeded or start from noise. There is increasing interest in x-ray FELs that rely on Self-Amplified Spontaneous Emission (SASE), and this involves increasing simulation activity in the design, optimization, and characterization of these x-ray FELs. Most of the simulation codes in use rely on the Slowly-Varying Envelope Approximation (SVEA) in which Maxwell's equations are averaged over the fast time scale resulting in relatively small computational requirements. While the SVEA codes are generally successful, the predictions of these codes sometimes differ in various aspects of the FEL interaction. In contrast, Particle-in-Cell (PiC) simulation codes do not average Maxwell's equations and are considered to be a more complete model of the underlying physics.Unfortunately, they require much longer run times than SVEA codes and have not been validated by comparison with experiment as often as the SVEA codes. In order to remedy this, and to resolve issues that arise due to different predictions between the SVEA codes, we present a comparison between one SVEA code (MINERVA) and a PiC simulation code (PUFFIN) with the experimental measurements obtained at the SPARC SASE FEL experiment at ENEA Frascati. The results show good agreement between the two codes and between the codes and the experiment. Since the formulations of the two codes share no common elements, this validates both formulations and demonstrates the capability to model the FEL interaction from the start of teh undulator through the undulator and into deep saturation.
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Submitted 17 June, 2019; v1 submitted 4 June, 2019;
originally announced June 2019.
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An X-Ray Regenerative Amplifier Free-Electron Laser Using Diamond Pinhole MIrrors
Authors:
Henry P. Freund,
Peter van der Slot,
Yuri Shvyd'ko
Abstract:
Free-electron lasers (FELs) have been built ranging in wavelength from long-wavelength oscillators using partial wave guiding through ultraviolet through hard x-ray FELs that are either seeded or start from noise (SASE). Operation in the x-ray spectrum has relied on single-pass SASE due either to the lack of seed lasers or difficulties in the design of x-ray mirrors. However, recent developments i…
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Free-electron lasers (FELs) have been built ranging in wavelength from long-wavelength oscillators using partial wave guiding through ultraviolet through hard x-ray FELs that are either seeded or start from noise (SASE). Operation in the x-ray spectrum has relied on single-pass SASE due either to the lack of seed lasers or difficulties in the design of x-ray mirrors. However, recent developments in the production of diamond crystal Bragg reflectors point the way to the design of regenerative amplifiers (RAFELs) which are, essentially, low-Q x-ray free-electron laser oscillators (XFELOs) that out-couple a large fraction of the optical power on each pass. A RAFEL using a six-mirror resonator providing out-coupling of 90% or more through a pinhole in the first downstream mirror is proposed and analyzed using the MINERVA simulation code for the undulator interaction and the Optics Propagation Code (OPC) for the resonator. MINERVA/OPC has been used in the past to simulate infrared FEL oscillators. For the present purpose, OPC has been modified to treat Bragg reflection from diamond crystal mirrors. The six-mirror resonator design has been analyzed within the context of the LCLS-II beamline under construction at the Stanford Linear Accelerator Center and using the HXR undulator which is also to be installed on the LCLS-II beamline. Simulations have been run to optimize and characterize the properties of the RAFEL, and indicate that substantial powers are possible at the fundamental (3.05 keV) and third harmonic (9.15 keV).
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Submitted 15 May, 2019;
originally announced May 2019.
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Integrated frequency comb laser with narrow intrinsic optical linewidth based on a dielectric waveguide feedback circuit
Authors:
Jesse Mak,
Albert van Rees,
Youwen Fan,
Edwin J. Klein,
Dimitri Geskus,
Peter J. M. van der Slot,
Klaus. -J. Boller
Abstract:
We present an integrated hybrid semiconductor-dielectric (InP-Si$_3$N$_4$) waveguide laser that generates frequency combs at a wavelength around 1.5 $μ$m with a record-low intrinsic optical linewidth of 34 kHz. This is achieved by extending the cavity photon lifetime using a low-loss dielectric waveguide circuit. In our experimental demonstration, the on-chip, effective optical path length of the…
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We present an integrated hybrid semiconductor-dielectric (InP-Si$_3$N$_4$) waveguide laser that generates frequency combs at a wavelength around 1.5 $μ$m with a record-low intrinsic optical linewidth of 34 kHz. This is achieved by extending the cavity photon lifetime using a low-loss dielectric waveguide circuit. In our experimental demonstration, the on-chip, effective optical path length of the laser cavity is extended to 6 cm. The resulting linewidth narrowing shows the high potential of on-chip, highly coherent frequency combs with direct electrical pumping, based on hybrid and heterogeneous integrated circuits making use of low-loss dielectric waveguides.
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Submitted 18 February, 2019;
originally announced February 2019.
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Surface acoustic waves for acousto-optic modulation in buried silicon nitride waveguides
Authors:
Peter J. M. van der Slot,
Marco A. G. Porcel,
Klaus-J. Boller
Abstract:
We theoretically investigate the use of Rayleigh surface acoustic waves (SAWs) for refractive index modulation in optical waveguides consisting of amorphous dielectrics. Considering low-loss Si$_3$N$_4$ waveguides with a standard core cross section of 4.4$\times$0.03 $μ$m$^2$ size, buried 8 $μ$m deep in a SiO$_2$ cladding we compare surface acoustic wave generation in various different geometries…
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We theoretically investigate the use of Rayleigh surface acoustic waves (SAWs) for refractive index modulation in optical waveguides consisting of amorphous dielectrics. Considering low-loss Si$_3$N$_4$ waveguides with a standard core cross section of 4.4$\times$0.03 $μ$m$^2$ size, buried 8 $μ$m deep in a SiO$_2$ cladding we compare surface acoustic wave generation in various different geometries via a piezo-active, lead zirconate titanate film placed on top of the surface and driven via an interdigitized transducer (IDT). Using numerical solutions of the acoustic and optical wave equations, we determine the strain distribution of the SAW under resonant excitation. From the overlap of the acoustic strain field with the optical mode field we calculate and maximize the attainable amplitude of index modulation in the waveguide. For the example of a near-infrared wavelength of 840 nm, a maximum shift in relative effective refractive index of 0.7x10$^{-3}$ was obtained for TE polarized light, using an IDT period of 30 - 35 $μ$m, a film thickness of 2.5 - 3.5 $μ$m, and an IDT voltage of 10 V. For these parameters, the resonant frequency is in the range 70 - 85 MHz. The maximum shift increases to 1.2x10$^{-3}$, with a corresponding resonant frequency of 87 MHz, when the height of the cladding above the core is reduced to 3 $μ$m. The relative index change is about 300-times higher than in previous work based on non-resonant proximity piezo-actuation, and the modulation frequency is about 200-times higher. Exploiting the maximum relative index change of 1.2$\times$10$^{-3}$ in a low-loss balanced Mach-Zehnder modulator should allow full-contrast modulation in devices as short as 120 $μ$m (half-wave voltage length product = 0.24 Vcm).
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Submitted 10 April, 2019; v1 submitted 9 October, 2017;
originally announced October 2017.
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Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides
Authors:
Marco A. G. Porcel,
Jesse Mak,
Caterina Taballione,
Victoria K. Schermerhorn,
Jörn P. Epping,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
We report the observation of second-harmonic generation in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapour deposition. Quasi-rectangular waveguides with a large cross section were used, with a height of 1 μm and various different widths, from 0.6 to 1.2 μm, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavele…
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We report the observation of second-harmonic generation in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapour deposition. Quasi-rectangular waveguides with a large cross section were used, with a height of 1 μm and various different widths, from 0.6 to 1.2 μm, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavelength with a repetition rate of 20 MHz, 15% of the incoming power was coupled through the waveguide, making maximum average powers of up to 15 mW available in the waveguide. Second-harmonic output was observed with a delay of minutes to several hours after the initial turn-on of pump radiation, showing a fast growth rate between 10$^{-4}$ to 10$^{-2}$ s$^{-1}$, with the shortest delay and highest growth rate at the highest input power. After this first, initial build-up, the second-harmonic became generated instantly with each new turn-on of the pump laser power. Phase matching was found to be present independent of the used waveguide width, although the latter changes the fundamental and second-harmonic phase velocities. We address the presence of a second-order nonlinearity and phase matching, involving an initial, power-dependent build-up, to the coherent photogalvanic effect. The effect, via the third-order nonlinearity and multiphoton absorption leads to a spatially patterned charge separation, which generates a spatially periodic, semi-permanent, DC-field-induced second-order susceptibility with a period that is appropriate for quasi-phase matching. The maximum measured second-harmonic conversion efficiency amounts to 0.4% in a waveguide with 0.9 x 1 μm$^2$ cross section and 36 mm length, corresponding to 53 μW at 532 nm with 13 mW of IR input coupled into the waveguide. The according $χ^{(2)}$ amounts to 3.7 pm/V, as retrieved from the measured conversion efficiency.
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Submitted 30 October, 2017; v1 submitted 9 October, 2017;
originally announced October 2017.
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Studies of a Terawatt X-Ray Free-Electron Laser
Authors:
H. P. Freund,
P. J. M. van der SLot
Abstract:
The possibility of constructing terawatt (TW) x-ray free-electron lasers (FELs) has been discussed using novel superconducting helical undulators [5]. In this paper, we consider the conditions necessary for achieving powers in excess of 1 TW in a 1.5 Å FEL using simulations with the MINERVA simulation code [7]. Steady-state simulations have been conducted using a variety of undulator and focusing…
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The possibility of constructing terawatt (TW) x-ray free-electron lasers (FELs) has been discussed using novel superconducting helical undulators [5]. In this paper, we consider the conditions necessary for achieving powers in excess of 1 TW in a 1.5 Å FEL using simulations with the MINERVA simulation code [7]. Steady-state simulations have been conducted using a variety of undulator and focusing configurations. In particular, strong focusing using FODO lattices is compared with the natural, weak focusing inherent in helical undulators. It is found that the most important requirement to reach TW powers is extreme transverse compression of the electron beam in a strong FODO lattice. The importance of extreme focusing of the electron beam in the production of TW power levels means that the undulator is not the prime driver for a TW FEL, and simulations are also described using planar undulators that reach near-TW power levels. In addition, TW power levels can be reached using pure self-amplified spontaneous emission (SASE) or with novel self-seeding configurations when such extreme focusing of the electron beam is applied.
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Submitted 29 March, 2018; v1 submitted 9 June, 2017;
originally announced June 2017.
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A temporal model for quasi-phase matching in high-order harmonic generation
Authors:
Y. Tao,
S. J. Goh,
H. M. J. Bastiaens,
P. J. M. van der Slot,
S. G. Biedron,
S. V. Milton,
K. -J. Klaus
Abstract:
We present a model for quasi-phase matching (QPM) in high-order harmonic generation (HHG). Using a one-dimensional description, we analyze the time-dependent, ultrafast wave-vector balance to calculate the on-axis harmonic output versus time, from which we obtain the output pulse energy. Considering, as an example, periodically patterned argon gas, as may be provided with a grid in a cluster jet,…
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We present a model for quasi-phase matching (QPM) in high-order harmonic generation (HHG). Using a one-dimensional description, we analyze the time-dependent, ultrafast wave-vector balance to calculate the on-axis harmonic output versus time, from which we obtain the output pulse energy. Considering, as an example, periodically patterned argon gas, as may be provided with a grid in a cluster jet, we calculate the harmonic output during different time intervals within the drive laser pulse duration. We find that identifying a suitable single spatial period is not straightforward due to the complex and ultrafast plasma dynamics that underlies HHG at increased intensities. The maximum on-axis harmonic pulse energy is obtained when choosing the QPM period to phase match HHG at the leading edge of the drive laser pulse.
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Submitted 13 December, 2016;
originally announced December 2016.
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Cluster size dependence of high-order harmonic generation
Authors:
Y. Tao,
R. Hagmeijers,
H. M. J. Bastiaens,
S. J. Goh,
P. J. M. van der Slot,
S. G. Biedron,
S. V. Milton,
K. -J. Boller
Abstract:
We investigate high-order harmonic generation (HHG) from noble gas clusters in a supersonic gas jet. To identify the contribution of harmonic generation from clusters versus that from gas monomers, we measure the high-order harmonic output over a broad range of the total atomic number density in the jet (from 3*10^16 cm^{-3} to 3x10^18 cm{-3}) at two different reservoir temperatures (303 K and 363…
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We investigate high-order harmonic generation (HHG) from noble gas clusters in a supersonic gas jet. To identify the contribution of harmonic generation from clusters versus that from gas monomers, we measure the high-order harmonic output over a broad range of the total atomic number density in the jet (from 3*10^16 cm^{-3} to 3x10^18 cm{-3}) at two different reservoir temperatures (303 K and 363 K). For the firrst time in the evaluation of the harmonic yield in such measurements, the variation of the liquid mass fraction, g, versus pressure and temperature is taken into consideration, which we determine, reliably and consistently, to be below 20% within our range of experimental parameters. By comparing the measured harmonic yield from a thin jet with the calculated corresponding yield from monomers alone, we find an increased emission of the harmonics when the average cluster size is less than 3000. Using g, under the assumption that the emission from monomers and clusters add up coherently, we calculate the ratio of the average single-atom response of an atom within a cluster to that of a monomer and find an enhancement of around 10 for very small average cluster size (~200). We do not find any dependence of the cut-off frequency on the composition of the cluster jet. This implies that HHG in clusters is based on electrons that return to their parent ions and not to neighbouring ions in the cluster. To fully employ the enhanced average single-atom response found for small average cluster sizes (~200), the nozzle producing the cluster jet must provide a large liquid mass fraction at these small cluster sizes for increasing the harmonic yield. Moreover, cluster jets may allow for quasi-phase matching, as the higher mass of clusters allows for a higher density contrast in spatially structuring the nonlinear medium.
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Submitted 2 May, 2017; v1 submitted 29 November, 2016;
originally announced November 2016.
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Three-Dimensional, Time-Dependent Simulation of Free-Electron Lasers with Planar, Helical, and Elliptical Undulators
Authors:
H. P. Freund,
P. J. M. van der Slot,
D. L. A. G. Grimminck,
I. D. Setija,
P. Falgari
Abstract:
Free-electron lasers (FELs) have been built ranging in wavelength from long-wavelength oscillators using partial wave guiding through ultraviolet through hard x-ray that are either seeded or start from noise (SASE). In addition, FELs that produce different polarizations of the output radiation ranging from linear through elliptic to circular polarization are currently under study. In this paper, w…
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Free-electron lasers (FELs) have been built ranging in wavelength from long-wavelength oscillators using partial wave guiding through ultraviolet through hard x-ray that are either seeded or start from noise (SASE). In addition, FELs that produce different polarizations of the output radiation ranging from linear through elliptic to circular polarization are currently under study. In this paper, we develop a three-dimensional, time-dependent formulation that is capable of modeling this large variety of FEL configurations including different polarizations. We employ a modal expansion for the optical field, i.e., a Gaussian expansion with variable polarization for free-space propagation. This formulation uses the full Newton-Lorentz force equations to track the particles through the optical and magnetostatic fields. As a result, arbitrary three-dimensional representations for different undulator configurations are implemented, including planar, helical, and elliptical undulators. In particular, we present an analytic model of an APPLE-II undulator to treat arbitrary elliptical polarizations. To model oscillator configurations, and allow propagation of the optical field outside the undulator and interact with optical elements, we link the FEL simulation with the optical propagation code OPC. We present simulations using the APPLE-II undulator model to produce elliptically polarized output radiation, and present a detailed comparison with recent experiments using a tapered undulator configuration at the Linac Coherent Light Source. Validation of the nonlinear formation is also shown by comparison with experimental results obtained in the SPARC SASE FEL experiment at ENEA Frascati, a seeded tapered amplifier experiment at Brookhaven National Laboratory, and the 10-kW Upgrade Oscillator experiment at the Thomas Jefferson National Accelerator Facility.
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Submitted 5 November, 2016;
originally announced November 2016.
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Coherent Cerenkov radiation and laser oscillation in a photonic crystal
Authors:
T. Denis,
M. V. van Dijk,
J. H. H. Lee,
R. van der Meer,
A. Strooisma,
P. J. M. van der Slot,
W. L. Vos,
K. J. Boller
Abstract:
We demonstrate that photonic crystals can be used to generate powerful and highly coherent laser radiation when injecting a beam of free electrons. Using theoretical investigations we present the startup dynamics and coherence properties of such laser, in which gain is provided by matching the optical phase velocity in the photonic crystal to the velocity of the electron beam.
We demonstrate that photonic crystals can be used to generate powerful and highly coherent laser radiation when injecting a beam of free electrons. Using theoretical investigations we present the startup dynamics and coherence properties of such laser, in which gain is provided by matching the optical phase velocity in the photonic crystal to the velocity of the electron beam.
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Submitted 26 October, 2016; v1 submitted 23 August, 2016;
originally announced August 2016.
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Deep Saturated Free Electron Laser Oscillators and Frozen Spikes
Authors:
P. L. Ottaviani,
S. Pagnutti,
G. Dattoli,
E. Sabia,
V. Petrillo,
P. Van Der Slot,
S. Biedron,
S. Milton
Abstract:
We analyze the behavior of Free Electron Laser (FEL) oscillators operating in the deep saturated regime and point out the formation of sub-peaks of the optical pulse. They are very stable configurations, having a width corresponding to a coherence length. We speculate on the physical mechanisms underlying their growth and attempt an identification with FEL mode locked structures associated with Su…
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We analyze the behavior of Free Electron Laser (FEL) oscillators operating in the deep saturated regime and point out the formation of sub-peaks of the optical pulse. They are very stable configurations, having a width corresponding to a coherence length. We speculate on the physical mechanisms underlying their growth and attempt an identification with FEL mode locked structures associated with Super Modes. Their impact on the intra-cavity nonlinear harmonic generation is also discussed along with the possibility of exploiting them as cavity out-coupler.
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Submitted 27 January, 2016;
originally announced January 2016.
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Single-shot fluctuations in waveguided high-harmonic generation
Authors:
S. J. Goh,
Y. Tao,
P. J. M. van der Slot,
H. J. M. Bastiaens,
J. Herek,
S. G. Biedron,
M. B. Danailov,
S. V. Milton,
K. -J. Boller
Abstract:
For exploring the application potential of coherent soft x-ray (SXR) and extreme ultraviolet radiation (XUV) provided by high-harmonic generation, it is important to characterize the central output parameters. Of specific importance are pulse-to-pulse (shot-to-shot) fluctuations of the high-harmonic output energy, fluctuations of the direction of the emission (pointing instabilities), and fluctuat…
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For exploring the application potential of coherent soft x-ray (SXR) and extreme ultraviolet radiation (XUV) provided by high-harmonic generation, it is important to characterize the central output parameters. Of specific importance are pulse-to-pulse (shot-to-shot) fluctuations of the high-harmonic output energy, fluctuations of the direction of the emission (pointing instabilities), and fluctuations of the beam divergence and shape that reduce the spatial coherence. We present the first single-shot measurements of waveguided high-harmonic generation in a waveguided (capillary-based) geometry. Using a capillary waveguide filled with Argon gas as the nonlinear medium, we provide the first characterization of shot-to-shot fluctuations of the pulse energy, of the divergence and of the beam pointing. We record the strength of these fluctuations vs. two basic input parameters, which are the drive laser pulse energy and the gas pressure in the capillary waveguide. In correlation measurements between single-shot drive laser beam profiles and single-shot high-harmonic beam profiles we prove the absence of drive laser beam-pointing-induced fluctuations in the high-harmonic output. We attribute the main source of high-harmonic fluctuations to ionization-induced nonlinear mode mixing during propagation of the drive laser pulse inside the capillary waveguide.
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Submitted 15 July, 2015;
originally announced July 2015.
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High confinement, high yield Si3N4 waveguides for nonlinear optical application
Authors:
Jörn P. Epping,
Marcel Hoekman,
Richard Mateman,
Arne Leinse,
René G. Heideman,
Albert van Rees,
Peter J. M. van der Slot,
Chris J. Lee,
Klaus-J. Boller
Abstract:
In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high…
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In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.
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Submitted 13 January, 2015; v1 submitted 31 October, 2014;
originally announced October 2014.
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Integrated CARS Source based on Seeded Four-wave Mixing in Silicon Nitride
Authors:
Jörn P. Epping,
Michael Kues,
Peter J. M. van der Slot,
Chris J. Lee,
Carsten Fallnich,
Klaus-J. Boller
Abstract:
We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of mag…
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We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of magnitude lower than in previously reported approaches based on optical fibers. The tuning range of the wavelength conversion was calculated to be 1418 nm to 1518 nm (idler) and 788 nm to 857 nm (signal), which corresponds to a coverage of vibrational transitions from 2350 cm$^{-1}$ to 2810 cm$^{-1}$. A maximum conversion efficiency of 19.1% at a peak pump power of 300 W was obtained.
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Submitted 9 December, 2013; v1 submitted 8 November, 2013;
originally announced November 2013.
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A gain-coefficient switched Alexandrite laser
Authors:
Chris J. Lee,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
We report on a gain-coefficient switched Alexandrite laser. An electro-optic modulator is used to switch between high and low gain states by making use of the polarization dependent gain of Alexandrite. In gain-coefficient switched mode, the laser produces 85 ns pulses with a pulse energy of 240 mJ at a repetition rate of 5 Hz.
We report on a gain-coefficient switched Alexandrite laser. An electro-optic modulator is used to switch between high and low gain states by making use of the polarization dependent gain of Alexandrite. In gain-coefficient switched mode, the laser produces 85 ns pulses with a pulse energy of 240 mJ at a repetition rate of 5 Hz.
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Submitted 11 September, 2012;
originally announced September 2012.
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Mapping individual electromagnetic field components inside a photonic crystal
Authors:
T. Denis,
B. Reijnders,
J. H. H. Lee,
P. J. M. van der Slot,
W. L. Vos,
K. -J. Boller
Abstract:
We present a method to map the absolute electromagnetic field strength inside photonic crystals. We apply the method to map the electric field component Ez of a two-dimensional photonic crystal slab at microwave frequencies. The slab is placed between two mirrors to select Bloch standing waves and a subwavelength spherical scatterer is scanned inside the resulting resonator. The resonant Bloch fre…
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We present a method to map the absolute electromagnetic field strength inside photonic crystals. We apply the method to map the electric field component Ez of a two-dimensional photonic crystal slab at microwave frequencies. The slab is placed between two mirrors to select Bloch standing waves and a subwavelength spherical scatterer is scanned inside the resulting resonator. The resonant Bloch frequencies shift depending on the electric field at the position of the scatterer. To map the electric field component Ez we measure the frequency shift in the reflection and transmission spectrum of the slab versus the scatterer position. Very good agreement is found between measurements and calculations without any adjustable parameters.
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Submitted 9 July, 2012;
originally announced July 2012.
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Ellipsometry with an undetermined polarization state
Authors:
Feng Liu,
Chris J. Lee,
Juequan Chen,
Eric Louis,
Peter J. M. van der Slot,
Klaus J. Boller,
Fred Bijkerk
Abstract:
We show that, under the right conditions, one can make highly accurate polarization-based measurements without knowing the absolute polarization state of the probing light field. It is shown that light, passed through a randomly varying birefringent material has a well-defined orbit on the Poincare sphere, which we term a generalized polarization state, that is preserved. Changes to the generalize…
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We show that, under the right conditions, one can make highly accurate polarization-based measurements without knowing the absolute polarization state of the probing light field. It is shown that light, passed through a randomly varying birefringent material has a well-defined orbit on the Poincare sphere, which we term a generalized polarization state, that is preserved. Changes to the generalized polarization state can then be used in place of the absolute polarization states that make up the generalized state, to measure the change in polarization due to a sample under investigation. We illustrate the usefulness of this analysis approach by demonstrating fiber-based ellipsometry, where the polarization state of the probe light is unknown, and, yet, the ellipsometric angles of the investigated sample ($Ψ$ and $Δ$) are obtained with an accuracy comparable to that of conventional ellipsometry instruments by measuring changes to the generalized polarization state.
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Submitted 18 October, 2011;
originally announced October 2011.
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Using ultra-short pulses to determine particle size and density distributions
Authors:
Chris J. Lee,
Peter J. M. van der Slot,
Klaus. -J. Boller
Abstract:
We analyze the time dependent response of strongly scattering media (SSM) to ultra-short pulses of light. A random walk technique is used to model the optical scattering of ultra-short pulses of light propagating through media with random shapes and various packing densities. The pulse spreading was found to be strongly dependent on the average particle size, particle size distribution, and the…
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We analyze the time dependent response of strongly scattering media (SSM) to ultra-short pulses of light. A random walk technique is used to model the optical scattering of ultra-short pulses of light propagating through media with random shapes and various packing densities. The pulse spreading was found to be strongly dependent on the average particle size, particle size distribution, and the packing fraction. We also show that the intensity as a function of time-delay can be used to analyze the particle size distribution and packing fraction of an optically thick sample independently of the presence of absorption features. Finally, we propose an all new way to measure the shape of ultra-short pulses that have propagated through a SSM.
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Submitted 1 August, 2007;
originally announced August 2007.
