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A structural analysis of ordered Cs$_{3}$Sb films grown on single crystal graphene and silicon carbide substrates
Authors:
C. Pennington,
M. Gaowei,
E. M. Echeverria,
K. Evans-Lutterodt,
A. Galdi,
T. Juffmann,
S. Karkare,
J. Maxson,
S. J. van der Molen,
P. Saha,
J. Smedley,
W. G. Stam,
R. M. Tromp
Abstract:
Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering the crystalline structure of alkali antimonides has the potential to deliver higher brightness electr…
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Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering the crystalline structure of alkali antimonides has the potential to deliver higher brightness electron beams by reducing surface disorder and enabling the engineering of material properties at the level of atomic layers. In this report, we demonstrate the growth of ordered Cs$_{3}$Sb films on single crystal substrates 3C-SiC and graphene-coated 4H-SiC using pulsed laser deposition and conventional thermal evaporation growth techniques. The crystalline structures of the Cs$_{3}$Sb films were examined using reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD) diagnostics, while film thickness and roughness estimates were made using x-ray reflectivity (XRR). With these tools, we observed ordered domains in less than 10 nm thick films with quantum efficiencies greater than one percent at 530 nm. Moreover, we identify structural features such as Laue oscillations indicative of highly ordered films. We found that Cs$_{3}$Sb films grew with flat, fiber-textured surfaces on 3C-SiC and with multiple ordered domains and sub-nanometer surface roughness on graphene-coated 4H-SiC under our growth conditions. We identify the crystallographic orientations of Cs$_{3}$Sb grown on graphene-coated 4H-SiC substrates and discuss the significance of examining the crystal structure of these films for growing epitaxial heterostructures in future experiments.
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Submitted 16 July, 2024;
originally announced July 2024.
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Sharp zero-phonon lines of single organic molecules on a hexagonal boron-nitride surface
Authors:
Robert Smit,
Arash Tebyani,
Jil Hameury,
Sense Jan van der Molen,
Michel Orrit
Abstract:
Single fluorescent molecules embedded in the bulk of host crystals have proven to be excellent probes of the dynamics in their nano environment, thanks to their narrow (about 0.1 μeV) optical linewidth of the 0-0 zero-phonon line (0-0 ZPL) at cryogenic temperatures. However, the optical linewidths of the 0-0 ZPL have been found to increase dramatically as the single molecules are located closer to…
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Single fluorescent molecules embedded in the bulk of host crystals have proven to be excellent probes of the dynamics in their nano environment, thanks to their narrow (about 0.1 μeV) optical linewidth of the 0-0 zero-phonon line (0-0 ZPL) at cryogenic temperatures. However, the optical linewidths of the 0-0 ZPL have been found to increase dramatically as the single molecules are located closer to a surface or interface, while no 0-0 ZPL has been detected for organic molecules on any surface. Here, we study single fluorescent terrylene molecules adsorbed on the surface of hexagonal boron-nitride (hBN) substrates. Our low-temperature results show for the first time the observation of the 0-0 ZPL of fluorescent molecules on a surface. With resonant excitation, we find 0-0 ZPL linewidths down to values that are about 10 times larger than the Fourier limit of 45 +/- 3 MHz, dictated by the fluorescence lifetime. We compare our results for molecules deposited on the surfaces of annealed and non-annealed hBN flakes and we see a marked improvement in the spectral stability of the emitters after annealing. Our high-resolution spectra obtained on terrylene suggest the possibility of employing hBN in combination with a wide variety of single molecule emitters for investigation of physical phenomena at surfaces or for use in nanophotonic devices.
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Submitted 7 June, 2023; v1 submitted 8 July, 2022;
originally announced July 2022.
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Optical Near-Field Electron Microscopy
Authors:
Raphaël Marchand,
Radek Šachl,
Martin Kalbáč,
Martin Hof,
Rudolf Tromp,
Mariana Amaro,
Sense J. van der Molen,
Thomas Juffmann
Abstract:
Imaging dynamical processes at interfaces and on the nanoscale is of great importance throughout science and technology. While light-optical imaging techniques often cannot provide the necessary spatial resolution, electron-optical techniques damage the specimen and cause dose-induced artefacts. Here, Optical Near-field Electron Microscopy (ONEM) is proposed, an imaging technique that combines non…
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Imaging dynamical processes at interfaces and on the nanoscale is of great importance throughout science and technology. While light-optical imaging techniques often cannot provide the necessary spatial resolution, electron-optical techniques damage the specimen and cause dose-induced artefacts. Here, Optical Near-field Electron Microscopy (ONEM) is proposed, an imaging technique that combines non-invasive probing with light, with a high spatial resolution read-out via electron optics. Close to the specimen, the optical near-fields are converted into a spatially varying electron flux using a planar photocathode. The electron flux is imaged using low energy electron microscopy, enabling label-free nanometric resolution without the need to scan a probe across the sample. The specimen is never exposed to damaging electrons.
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Submitted 25 February, 2021;
originally announced February 2021.
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Patterning Sn-based EUV resists with low-energy electrons
Authors:
Ivan Bespalov,
Yu Zhang,
Jarich Haitjema,
Rudolf M. Tromp,
Sense Jan van der Molen,
Albert M. Brouwer,
Johannes Jobst,
Sonia Castellanos
Abstract:
Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (LEEs) produced upon illumination of resist materials with EUV photons (92 eV) play a central role in the formation of the nanopatterns. However, up to now the details of this process are not well understood. In this work…
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Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (LEEs) produced upon illumination of resist materials with EUV photons (92 eV) play a central role in the formation of the nanopatterns. However, up to now the details of this process are not well understood. In this work, a novel experimental approach that combines Low-Energy Electron Microscopy (LEEM), Electron Energy Loss Spectroscopy (EELS), and Atomic Force Microscopy (AFM) is used to study changes induced by electrons in the 0-40 eV range in thin films of molecular organometallic EUV resists known as tin-oxo cages. LEEM-EELS spectroscopic experiments were used to detect surface charging upon electron exposure and to estimate the electron landing energy. AFM post-exposure analyses revealed that irradiation of the resist with LEEs leads to the densification of the resist layer associated to carbon loss. The same chemical processes that yield densification render the solubility change responsible for the pattern formation in the lithographic application. Remarkably, electrons as low as 1.2 eV are able to induce chemical reactions in the Sn-based resist. Based on the thickness profiles resulting from LEE exposures in the 3-48 mC/cm 2 dose range, a simplified reaction model is proposed where the resist undergoes sequential chemical reactions, yielding first a sparsely cross-linked network, followed by the formation of a denser cross-linked network. This model allows us to estimate a maximum reaction volume on the initial material of 0.15 nm 3 per incident electron in the energy range studied, which means that less than 10 LEEs per molecule on average are needed to turn the material insoluble and thus render a pattern.
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Submitted 6 October, 2019;
originally announced October 2019.
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Quantitative analysis of spectroscopic Low Energy Electron Microscopy data: High-dynamic range imaging, drift correction and cluster analysis
Authors:
Tobias A. de Jong,
David N. L. Kok,
Alexander J. H. van der Torren,
Henrik Schopmans,
Rudolf M. Tromp,
Sense Jan van der Molen,
Johannes Jobst
Abstract:
For many complex materials systems, low-energy electron microscopy (LEEM) offers detailed insights into morphology and crystallography by naturally combining real-space and reciprocal-space information. Its unique strength, however, is that all measurements can easily be performed energy-dependently. Consequently, one should treat LEEM measurements as multi-dimensional, spectroscopic datasets rath…
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For many complex materials systems, low-energy electron microscopy (LEEM) offers detailed insights into morphology and crystallography by naturally combining real-space and reciprocal-space information. Its unique strength, however, is that all measurements can easily be performed energy-dependently. Consequently, one should treat LEEM measurements as multi-dimensional, spectroscopic datasets rather than as images to fully harvest this potential. Here we describe a measurement and data analysis approach to obtain such quantitative spectroscopic LEEM datasets with high lateral resolution. The employed detector correction and adjustment techniques enable measurement of true reflectivity values over four orders of magnitudes of intensity. Moreover, we show a drift correction algorithm, tailored for LEEM datasets with inverting contrast, that yields sub-pixel accuracy without special computational demands. Finally, we apply dimension reduction techniques to summarize the key spectroscopic features of datasets with hundreds of images into two single images that can easily be presented and interpreted intuitively. We use cluster analysis to automatically identify different materials within the field of view and to calculate average spectra per material. We demonstrate these methods by analyzing bright-field and dark-field datasets of few-layer graphene grown on silicon carbide and provide a high-performance Python implementation.
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Submitted 31 July, 2019;
originally announced July 2019.
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Intrinsic Instability of Aberration-Corrected Electron Microscopes
Authors:
S. M. Schramm,
S. J. van der Molen,
R. M. Tromp
Abstract:
Aberration-corrected microscopes with sub-atomic resolution will impact broad areas of science and technology. However, the experimentally observed lifetime of the corrected state is just a few minutes. Here we show that the corrected state is intrinsically unstable; the higher its quality, the more unstable it is. Analyzing the Contrast Transfer Function near optimum correction, we define an 'ins…
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Aberration-corrected microscopes with sub-atomic resolution will impact broad areas of science and technology. However, the experimentally observed lifetime of the corrected state is just a few minutes. Here we show that the corrected state is intrinsically unstable; the higher its quality, the more unstable it is. Analyzing the Contrast Transfer Function near optimum correction, we define an 'instability budget' which allows a rational trade-off between resolution and stability. Unless control systems are developed to overcome these challenges, intrinsic instability poses a fundamental limit to the resolution practically achievable in the electron microscope.
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Submitted 21 September, 2012;
originally announced September 2012.
