Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets
Authors:
Shen Li,
Mouad Fattouhi,
Tianxun Huang,
Chen Lv,
Mark C. H. de Jong,
Pingzhi Li,
Xiaoyang Lin,
Felipe Garcia-Sanchez,
Eduardo Martinez,
Stéphane Mangin,
Bert Koopmans,
Weisheng Zhao,
Reinoud Lavrijsen
Abstract:
The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been…
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The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications.
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Submitted 19 March, 2024;
originally announced March 2024.
