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Micro pixelated halide perovskite photodiodes fabricated with ultraviolet laser scribing
Authors:
A. P. Morozov,
P. A. Gostishchev,
A. Zharkova,
A. A. Vasilev,
A. E. Aleksandrov,
A. R. Tameev,
A. R. Ishteev,
S. I. Didenko,
D. S. Saranin
Abstract:
In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully manufactured PPDs with pixel configurations of 70x130 um2, 520x580 um2, and 2000x2000 um2. The utilization of UV-LS has a proven efficiency in achieving relevant…
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In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully manufactured PPDs with pixel configurations of 70x130 um2, 520x580 um2, and 2000x2000 um2. The utilization of UV-LS has a proven efficiency in achieving relevant diode characteristics, such as low dark currents and high shunt resistance, as well as ultrafast response. The multi-step scribing cycle provided precise patterning of perovskite photodiodes (PPDs) in a string design. The dark current densities demonstrated exceptional uniformity, ranging from 10-10 A/cm2 for 2000x2000 um2 pixelated PPDs to 10-9 A/cm2 for the 70x130 um2 configuration. The string PPDs, consisting of 10 pixels per string, displayed homogenous dark current values, ensuring effective isolation between devices. Under green light illumination (540 nm), all PPD types exhibited a broad Linear Dynamic Range (LDR). Specifically, LDR values reached 110 dB, 117 dB, and 136 dB for 70x130, 520x580, and 2000x2000 devices, respectively, spanning an illumination intensity range from 2*10-3 mW/cm2 to 2 mW/cm2. High responsivity values up to 0.38 A/W, depending on the PPDs geometry, highlight the potential of laser scribing devices for sensing in the visible range. The calculated specific detectivity performance (from 1011 to 1013 Jones) surpasses commercial analogs, while the sub-microsecond response of 70x130 um2 and 520x580 um2 miniaturized devices underscores their suitability for precise time resolution detection systems.
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Submitted 9 December, 2023;
originally announced December 2023.
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The LHCb upgrade I
Authors:
LHCb collaboration,
R. Aaij,
A. S. W. Abdelmotteleb,
C. Abellan Beteta,
F. Abudinén,
C. Achard,
T. Ackernley,
B. Adeva,
M. Adinolfi,
P. Adlarson,
H. Afsharnia,
C. Agapopoulou,
C. A. Aidala,
Z. Ajaltouni,
S. Akar,
K. Akiba,
P. Albicocco,
J. Albrecht,
F. Alessio,
M. Alexander,
A. Alfonso Albero,
Z. Aliouche,
P. Alvarez Cartelle,
R. Amalric,
S. Amato
, et al. (1298 additional authors not shown)
Abstract:
The LHCb upgrade represents a major change of the experiment. The detectors have been almost completely renewed to allow running at an instantaneous luminosity five times larger than that of the previous running periods. Readout of all detectors into an all-software trigger is central to the new design, facilitating the reconstruction of events at the maximum LHC interaction rate, and their select…
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The LHCb upgrade represents a major change of the experiment. The detectors have been almost completely renewed to allow running at an instantaneous luminosity five times larger than that of the previous running periods. Readout of all detectors into an all-software trigger is central to the new design, facilitating the reconstruction of events at the maximum LHC interaction rate, and their selection in real time. The experiment's tracking system has been completely upgraded with a new pixel vertex detector, a silicon tracker upstream of the dipole magnet and three scintillating fibre tracking stations downstream of the magnet. The whole photon detection system of the RICH detectors has been renewed and the readout electronics of the calorimeter and muon systems have been fully overhauled. The first stage of the all-software trigger is implemented on a GPU farm. The output of the trigger provides a combination of totally reconstructed physics objects, such as tracks and vertices, ready for final analysis, and of entire events which need further offline reprocessing. This scheme required a complete revision of the computing model and rewriting of the experiment's software.
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Submitted 10 September, 2024; v1 submitted 17 May, 2023;
originally announced May 2023.
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Estimation of self-healing effects in halide perovskite based rectifying device structures via deep-level transient spectroscopy
Authors:
Anton Vasilev,
Artur Ishteev,
Kamilla Konstantinova,
Alina Zharkova,
Oleg Bronnikov,
Sergey Didenko,
Danila Saranin,
Alexander Polyakov
Abstract:
The defect-activity in halide perovskites remains a critical factor for the application in optoelectronics. The imperfections (vacancies, anti-sites, interstitials) formed in the lattice of the halide perovskites were considered as a main origin for the corrosion of the interfaces and decomposition process under external stress. At the same time, the self-healing effect was reported as one of the…
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The defect-activity in halide perovskites remains a critical factor for the application in optoelectronics. The imperfections (vacancies, anti-sites, interstitials) formed in the lattice of the halide perovskites were considered as a main origin for the corrosion of the interfaces and decomposition process under external stress. At the same time, the self-healing effect was reported as one of the features for the devices based on halide perovskites, which manifests in the recovery of device performance under specific conditions. Such processes require a detailed analysis for the quantitative analysis of the defect parameters. In this work, we used Admittance and Optical Deep-level Transient spectroscopy to determine the evolution of the defect energy levels in the simplified rectifying device architecture based on CH3NH3PbBr3 after consecutive accumulation of the absorbed radiation dose (fast electrons, 5 MeV). We found that electron beam irradiation induces the formation of the deep states of anti-sites PbBr with activation energy of 0.83 eV. Increase of the absorbed radiation dose up to 1.5 Mrad resulted in a critical raise of 0.83 eV defect concentration, which can be effectively annealed during the temperature sweep. The changes in the defect parameters after different values of the absorbed radiation dose were analyzed and discussed. The current work provides new insights for the self-healing process of halide perovskite-based devices under hard external stress, revealing the important specifics of the defect behavior.
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Submitted 11 December, 2023; v1 submitted 11 May, 2023;
originally announced May 2023.
