Germanium quantum well Josephson field effect transistors and interferometers
Authors:
Florian Vigneau,
Raisei Mizokuchi,
Dante Colao Zanuz,
XuHai Huang,
Susheng Tan,
Romain Maurand,
Sergey Frolov,
Amir Sammak,
Giordano Scappucci,
François Lefloch,
Silvano De Franceschi
Abstract:
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum supe…
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Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements in superconducting point-contact devices. Transmission electron microscopy reveals the diffusion of Ge into the aluminum contacts, whereas no aluminum is detected in the Ge channel.
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Submitted 23 October, 2018; v1 submitted 11 October, 2018;
originally announced October 2018.
