Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Authors:
Eudomar Henríquez-Guerra,
Alberto M. Ruiz,
Marta Galbiati,
Alvaro Cortes-Flores,
Daniel Brown,
Esteban Zamora-Amo,
Lisa Almonte,
Andrei Shumilin,
Juan Salvador-Sánchez,
Ana Pérez-Rodríguez,
Iñaki Orue,
Andrés Cantarero,
Andres Castellanos-Gomez,
Federico Mompeán,
Mar Garcia-Hernandez,
Efrén Navarro-Moratalla,
Enrique Díez,
Mario Amado,
José J. Baldoví,
M. Reyes Calvo
Abstract:
Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the two-dimensional (2D) limit. Here, we demonstrate that compressive biaxial strain significantly enhances the magnetoresista…
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Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the two-dimensional (2D) limit. Here, we demonstrate that compressive biaxial strain significantly enhances the magnetoresistance and magnetic anisotropy of few-layer CrSBr flakes. Strain is efficiently transferred to the flakes from the thermal compression of a polymeric substrate upon cooling, as confirmed by temperature-dependent Raman spectroscopy. This strain induces a remarkable increase in the magnetoresistance ratio and in the saturation fields required to align the magnetization of CrSBr along each of its three crystalographic directions, reaching a twofold enhancement along the magnetic easy axis. This enhancement is accompanied by a subtle reduction of the Néel temperature by ~10K. Our experimental results are fully supported by first-principles calculations, which link the observed effects to a strain-driven modification in interlayer exchange coupling and magnetic anisotropy energy. These findings establish strain engineering as a key tool for fine-tuning magnetotransport properties in 2D magnetic semiconductors, paving the way for implementation in spintronics and information storage devices.
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Submitted 14 April, 2025;
originally announced April 2025.
