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Single Event Tolerance of X-ray SOI Pixel Sensors
Authors:
Kouichi Hagino,
Mitsuki Hayashida,
Takayoshi Kohmura,
Toshiki Doi,
Shun Tsunomachi,
Masatoshi Kitajima,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Takaaki Tanaka,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cr…
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We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.
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Submitted 10 October, 2022;
originally announced October 2022.
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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
Authors:
Mitsuki Hayashida,
Kouichi Hagino,
Takayoshi Kohmura,
Masatoshi Kitajima,
Keigo Yarita,
Kenji Oono,
Kousuke Negishi,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-…
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X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
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Submitted 11 August, 2021;
originally announced August 2021.
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Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area
Authors:
Hideki Hayashi,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Hideaki Matsumura,
Katsuhiro Tachibana,
Sodai Harada,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi,
Kenji Oono
, et al. (1 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processe…
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We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed ``XRPIX5b'' with the largest imaging area of 21.9~mm $\times$ 13.8~mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46~e$^-$~(rms) in the frame readout mode. The gain variation was measured to be 1.2\%~(FWHM) among the pixels. We successfully obtain the X-ray image in the event-driven readout mode.
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Submitted 29 April, 2019;
originally announced April 2019.
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Performance of SOI Pixel Sensors Developed for X-ray Astronomy
Authors:
Takaaki Tanaka,
Takeshi Go Tsuru,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Kazuho Kayama,
Yuki Amano,
Hideaki Matsumura,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Kohei Fukuda,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi
, et al. (2 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi…
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We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity.
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Submitted 14 December, 2018;
originally announced December 2018.
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Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission
Authors:
Takeshi G. Tsuru,
Hideki Hayashi,
Katsuhiro Tachibana,
Sodai Harada,
Hiroyuki Uchida,
Takaaki Tanaka,
Yasuo Arai,
Ikuo Kurachi,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Takayoshi Kohmura,
Kouichi Hagino,
Kenji Ohno,
Kohsuke Negishi,
Keigo Yarita,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Shunta Nakanishi,
Hiroki Kamehama
, et al. (1 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with…
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We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than $10~{\rm μsec}$ (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5--10~keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9~mm$\times$13.8~mm and an pixel size of $36~{\rm μm} \times 36~{\rm μm}$. The X-ray throughput with the device reaches higher than 0.57~kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO$_2$ insulator layers. The device shows an energy resolution of 216~eV in FWHM at 6.4~keV in the Event-Driven readout mode.
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Submitted 29 July, 2018;
originally announced July 2018.
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A SOI-Based Low Noise and Wide Dynamic Range Event-Driven Detector for X-Ray Imaging
Authors:
Sumeet Shrestha,
Hiroki Kamehama,
Shoji Kawahito,
Keita Yasutomi,
Keiichiro Kagawa,
Ayaki Takeda,
Takeshi Go Tsuru,
Yasuo Arai
Abstract:
A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. Event detection circuit is activated when X-Ray energy falls into the detector. In-pixel gain selection is implemented for the detection of a small…
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A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. Event detection circuit is activated when X-Ray energy falls into the detector. In-pixel gain selection is implemented for the detection of a small signal and wide band of energy particle. Adaptive gain and capability of correlated double sampling (CDS) technique for the kTC noise canceling of charge detector realizes the low noise and high dynamic range event driven detector.
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Submitted 24 July, 2015;
originally announced July 2015.
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Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor
Authors:
Takeshi G. Tsuru,
Hideaki Matsumura,
Ayaki Takeda,
Takaaki Tanaka,
Shinya Nakashima,
Yasuo Arai,
Koji Mori,
Ryota Takenaka,
Yusuke Nishioka,
Takayoshi Kohmura,
Takaki Hatsui,
Takashi Kameshima,
Kyosuke Ozaki,
Yoshiki Kohmura,
Tatsuya Wagai,
Dai Takei,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Hiroki Kamehama,
Sumeet Shrestha
Abstract:
We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A f…
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We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$α$ and K$β$. Moreover, we produced a fully depleted layer with a thickness of $500~{\rm μm}$. The event-driven readout mode has already been successfully demonstrated.
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Submitted 20 August, 2014;
originally announced August 2014.
