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Balancing chemical equations: form the perspective of Hilbert basis
Authors:
Zeying Zhang,
Xueqin Zhang,
Y. X. Zhao,
Shengyuan A. Yang
Abstract:
The balancing of chemical equations is a basic problem in chemistry. A commonly employed method is to convert the task to a linear algebra problem, and then solve the null space of the constructed formula matrix. However, in this method, the directly obtained solution may be invalid, and there is no canonical choice of independent basis reactions. Here, we show that these drawbacks originate from…
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The balancing of chemical equations is a basic problem in chemistry. A commonly employed method is to convert the task to a linear algebra problem, and then solve the null space of the constructed formula matrix. However, in this method, the directly obtained solution may be invalid, and there is no canonical choice of independent basis reactions. Here, we show that these drawbacks originate from the fact that the fundamental structure of solutions here is not a linear space but a positive affine monoid. This new understanding enables a systematic approach and a complete description of all possible reactions by a unique set of independent elementary reactions, called Hilbert-basis reactions. By clarifying its underlying mathematical structure, our work offers a new perspective on this old problem of balancing chemical equations.
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Submitted 8 October, 2024;
originally announced October 2024.
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Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection
Authors:
Xukun Feng,
Chit Siong Lau,
Shi-Jun Liang,
Ching Hua Lee,
Shengyuan A. Yang,
Yee Sin Ang
Abstract:
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact…
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Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact based on FVSC/graphene heterostructure where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley-selectively injected through the `Ohmic' valley while being blocked in the `Schottky' valley. We develop a theory of contact-limited valley-contrasting current injection and demonstrate that such transport mechanism can produce gate-tunable valley-polarized injection current. Using RuCl$_2$/graphene heterostructure as an example, we illustrate a device concept of valleytronic barristor where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact-limited valley-contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology.
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Submitted 9 August, 2023; v1 submitted 7 August, 2023;
originally announced August 2023.
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Towards Sustainable Ultrawide Bandgap Van der Waals Materials: An ab initio Screening Effort
Authors:
Chuin Wei Tan,
Linqiang Xu,
Chen Chen Er,
Siang-Piao Chai,
Boris Kozinsky,
Hui Ying Yang,
Shengyuan A. Yang,
Jing Lu,
Yee Sin Ang
Abstract:
The sustainable development of next-generation device technology is paramount in the face of climate change and the looming energy crisis. Tremendous efforts have been made in the discovery and design of nanomaterials that achieve device-level sustainability, where high performance and low operational energy cost are prioritized. However, many of such materials are composed of elements that are un…
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The sustainable development of next-generation device technology is paramount in the face of climate change and the looming energy crisis. Tremendous efforts have been made in the discovery and design of nanomaterials that achieve device-level sustainability, where high performance and low operational energy cost are prioritized. However, many of such materials are composed of elements that are under threat of depletion and pose elevated risks to the environment. The role of material-level sustainability in computational screening efforts remains an open question thus far. Here we develop a general van der Waals materials screening framework imbued with sustainability-motivated search criteria. Using ultrawide bandgap (UWBG) materials as a backdrop -- an emerging materials class with great prospects in dielectric, power electronics, and ultraviolet device applications, we demonstrate how this screening framework results in 25 sustainable UWBG layered materials comprising only of low-risks elements. Our findings constitute a critical first-step towards reinventing a more sustainable electronics landscape beyond silicon, with the framework established in this work serving as a harbinger of sustainable 2D materials discovery.
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Submitted 25 October, 2023; v1 submitted 26 June, 2023;
originally announced June 2023.
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2D Janus Niobium Oxydihalide NbO$XY$: Multifunctional High-Mobility Piezoelectric Semiconductor for Electronics, Photonics and Sustainable Energy Applications
Authors:
Tong Su,
Ching Hua Lee,
San-Dong Guo,
Guangzhao Wang,
Wee-Liat Ong,
Weiwei Zhao,
Shengyuan A. Yang,
Yee Sin Ang
Abstract:
Two-dimensional (2D) niobium oxydihalide NbOI$_2$ has been recently demonstrated as an excellent in-plane piezoelectric and nonlinear optical materials. Here we show that Janus niobium oxydihalide, NbO$XY$ (X, Y = Cl, Br, I and X$\neq$Y), is a multifunctional anisotropic semiconductor family with exceptional piezoelectric, electronic, photocatalytic and optical properties. NbO$XY$ are stable and m…
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Two-dimensional (2D) niobium oxydihalide NbOI$_2$ has been recently demonstrated as an excellent in-plane piezoelectric and nonlinear optical materials. Here we show that Janus niobium oxydihalide, NbO$XY$ (X, Y = Cl, Br, I and X$\neq$Y), is a multifunctional anisotropic semiconductor family with exceptional piezoelectric, electronic, photocatalytic and optical properties. NbO$XY$ are stable and mechancially flexible monolayers with band gap around the visible light regime of $\sim 1.9$ eV. The anisotropic carrier mobility of NbO$XY$ lies in the range of $10^3 \sim 10^4$ cm$^2$V$^{-1}$s$^{-1}$, which represents some of the highest among 2D semiconductors of bandgap $\gtrsim 2$ eV. Inversion symmetry breaking in Janus NbO$XY$ generates sizable out-of-plane $d_{31}$ piezoelectric response while still retaining a strong in-plane piezoelectricity. Remarkably, NbO$XY$ exhibits an additional out-of-plane piezoelectric response, $d_{32}$ as large as 0.55 pm/V. G$_0$W$_0$-BSE calculation further reveals the strong linear optical dichroism of NbO$XY$ in the visible-to-ultraviolet regime. The optical absorption peaks with $14\sim18$ \% in the deep UV regime ($5\sim6$ eV), outperforming the vast majority of other 2D materials. The high carrier mobility, strong optical absorption, sizable built-in electric field and band alignment compatible with overall water splitting further suggest the strengths of NbO$XY$ in energy conversion application. We further propose a directional stress sensing device to demonstrate how the out-of-plane piezoelectricity can be harnessed for functional device applications. Our findings unveil NbO$XY$ as an exceptional multifunctional 2D semiconductor for flexible electronics, optoelectronics, UV photonics, piezoelectric and sustainable energy applications.
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Submitted 3 November, 2022; v1 submitted 1 November, 2022;
originally announced November 2022.
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Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications
Authors:
Che Chen Tho,
Chenjiang Yu,
Qin Tang,
Qianqian Wang,
Tong Su,
Zhuoer Feng,
Qingyun Wu,
C. V. Nguyen,
Wee-Liat Ong,
Shi-Jun Liang,
San-Dong Guo,
Liemao Cao,
Shengli Zhang,
Shengyuan A. Yang,
Lay Kee Ang,
Guangzhao Wang,
Yee Sin Ang
Abstract:
Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain…
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Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$α_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology.
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Submitted 4 July, 2022; v1 submitted 23 June, 2022;
originally announced June 2022.
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Designing Ultra-Flat Bands in Twisted Bilayer Materials at Large Twist Angles without specific degree
Authors:
Shengdan Tao,
Xuanlin Zhang,
Jiaojiao Zhu,
Pimo He,
Shengyuan A. Yang,
Yunhao Lu,
Su-Huai Wei
Abstract:
Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new…
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Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moire superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer alpha-In2Se3 and bilayer InSe. For bilayer alpha-In2Se3, we show that a twist angle -13.2 degree is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle -1.1 degree. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way towards engineering such flat bands in a large family of 2D materials.
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Submitted 28 February, 2022;
originally announced February 2022.
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High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$-TeO$_2$
Authors:
Shiying Guo,
Hengze Qu,
Wenhan Zhou,
Shengyuan A. Yang,
Yee Sin Ang,
Jing Lu,
Haibo Zeng,
Shengli Zhang
Abstract:
Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $β$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure…
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Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $β$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure of monolayer $β$-TeO$_2$ and the device performance of sub-10 nm metal oxide semiconductors FETs (MOSFETs) based on this material. The anisotropic electronic structure of monolayer $β$-TeO$_2$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultra-high on-state current exceeding 3700 μA/μm according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer $β$-TeO$_2$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, sub-threshold swing, delay time, and power-delay product. This study unveils monolayer $β$-TeO$_2$ as a promising candidate for ultra-scaled devices in future nanoelectronics.
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Submitted 16 February, 2022;
originally announced February 2022.
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Monolayer RhB4: half-auxeticity and almost ideal spin-orbit Dirac point semimetal
Authors:
Zhen Gao,
Qianqian Wang,
Weikang Wu,
Zhixue Tian,
Ying Liu,
Fengxian Ma,
Yalong Jiao,
Shengyuan A. Yang
Abstract:
Structural-property relationship, the connection between materials' structures and their properties, is central to the materials research. Especially at reduced dimensions, novel structural motifs often generate unique physical properties.Motivated by a recent work reporting a novel half auxetic effect in monolayer PdB4 with a hypercoordinated structure, here, we extensively explore similar 2D tra…
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Structural-property relationship, the connection between materials' structures and their properties, is central to the materials research. Especially at reduced dimensions, novel structural motifs often generate unique physical properties.Motivated by a recent work reporting a novel half auxetic effect in monolayer PdB4 with a hypercoordinated structure, here, we extensively explore similar 2D transition metal boride structures MB4 with M covering 3d and 4d elements.Our investigation screens out one stable candidate, the monolayer RhB4. We find that monolayer RhB4 also shows half auxeticity, i.e., the material always expands in a lateral in-plane direction in response to an applied strain in the other direction, regardless of whether the strain is positive or negative.We show that this special mechanical character is intimately tied to the hypercoordinated structure with the M\c{opyright}B8 structural motif. Furthermore, regarding electronic properties, monolayer RhB4 is found to be the first example of an almost ideal 2D spin-orbit Dirac point semimetal.The low-energy band structure is clean, with a pair of fourfold degenerate Dirac points robust under spin-orbit coupling located close to the Fermi level. These Dirac points are enforced by the nonsymmorphic space group symmetry which is also determined by the lattice structure. Our work deepens the fundamental understanding of structural-property relationship in reduced dimensions. The half auxeticity and the spin-orbit Dirac points will make monolayer RhB4 a promising platform for nanomechanics and nanoelectronics applications.
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Submitted 8 December, 2021;
originally announced December 2021.
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Systematic investigation of emergent particles in type-III magnetic space groups
Authors:
Gui-Bin Liu,
Zeying Zhang,
Zhi-Ming Yu,
Shengyuan A. Yang,
Yugui Yao
Abstract:
In three-dimensional (3D) crystals, emergent particles arise when two or multiple bands contact and form degeneracy (band crossing) in the Brillouin zone. Recently a complete classification of emergent particles in 3D nonmagnetic crystals, which described by the type-II magnetic space groups (MSGs), has been established. However, a systematic investigation of emergent particles in magnetic crystal…
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In three-dimensional (3D) crystals, emergent particles arise when two or multiple bands contact and form degeneracy (band crossing) in the Brillouin zone. Recently a complete classification of emergent particles in 3D nonmagnetic crystals, which described by the type-II magnetic space groups (MSGs), has been established. However, a systematic investigation of emergent particles in magnetic crystals has not yet been performed, due to the complexity of the symmetries of magnetically ordered structures. Here, we address this challenging task by exploring the possibilities of the emergent particles in the 674 type-III MSGs. Based on effective k.p Hamiltonian and our classification of emergent particles [Yu et al., Sci. Bull. 67, 375 (2022) DOI:10.1016/j.scib.2021.10.023], we identify all possible emergent particles, including spinful and spinless, essential and accidental particles in the type-III MSGs. We find that all emergent particles in type-III MSGs also exist in type-II MSGs, with only one exception, i.e. the combined quadratic nodal line and nodal surface (QNL/NS). Moreover, tabulations of the emergent particles in each of the 674 type-III MSGs, together with the symmetry operations, the small corepresentations, the effective k.p Hamiltonians, and the topological character of these particles, are explicitly presented. Remarkably, combining this work and our homemade SpaceGroupIrep and MSGCorep packages will provide an effcient way to search topological magnetic materials with novel quasiparticles.
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Submitted 15 February, 2022; v1 submitted 8 November, 2021;
originally announced November 2021.
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Projectively enriched symmetry and topology in acoustic crystals
Authors:
Haoran Xue,
Zihao Wang,
Yue-Xin Huang,
Zheyu Cheng,
Letian Yu,
Y. X. Foo,
Y. X. Zhao,
Shengyuan A. Yang,
Baile Zhang
Abstract:
Symmetry plays a key role in modern physics, as manifested in the revolutionary topological classification of matter in the past decade. So far, we seem to have a complete theory of topological phases from internal symmetries as well as crystallographic symmetry groups. However, an intrinsic element, i.e., the gauge symmetry in physical systems, has been overlooked in the current framework. Here,…
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Symmetry plays a key role in modern physics, as manifested in the revolutionary topological classification of matter in the past decade. So far, we seem to have a complete theory of topological phases from internal symmetries as well as crystallographic symmetry groups. However, an intrinsic element, i.e., the gauge symmetry in physical systems, has been overlooked in the current framework. Here, we show that the algebraic structure of crystal symmetries can be projectively enriched due to the gauge symmetry, which subsequently gives rise to new topological physics never witnessed under ordinary symmetries. We demonstrate the idea by theoretical analysis, numerical simulation, and experimental realization of a topological acoustic lattice with projective translation symmetries under a $Z_2$ gauge field, which exhibits unique features of rich topologies, including a single Dirac point, Möbius topological insulator and graphene-like semimetal phases on a rectangular lattice. Our work reveals the impact when gauge and crystal symmetries meet together with topology, and opens the door to a vast unexplored land of topological states by projective symmetries.
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Submitted 24 July, 2021;
originally announced July 2021.
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Observation of Weyl point pair annihilation in a gyromagnetic photonic crystal
Authors:
Gui-Geng Liu,
Zhen Gao,
Peiheng Zhou,
Qiang Wang,
Yuan-Hang Hu,
Maoren Wang,
Chengqi Liu,
Xiao Lin,
Shengyuan A. Yang,
Yihao Yang,
Yidong Chong,
Baile Zhang
Abstract:
Weyl semimetals are gapless three-dimensional (3D) phases whose bandstructures contain Weyl point (WP) degeneracies. WPs carry topological charge and can only be eliminated by mutual annihilation, a process that generates the various topologically distinct 3D insulators. Time reversal (T) symmetric Weyl phases, containing a minimum of four WPs, have been extensively studied in real materials, phot…
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Weyl semimetals are gapless three-dimensional (3D) phases whose bandstructures contain Weyl point (WP) degeneracies. WPs carry topological charge and can only be eliminated by mutual annihilation, a process that generates the various topologically distinct 3D insulators. Time reversal (T) symmetric Weyl phases, containing a minimum of four WPs, have been extensively studied in real materials, photonic metamaterials, and other systems. Weyl phases with a single WP pair - the simplest configuration of WPs - are more elusive as they require T-breaking. Here, we implement a microwave-scale gyromagnetic 3D photonic crystal, and use field-mapping experiments to track a single pair of ideal WPs whose momentum space locations depend strongly on the biasing magnetic field. By continuously varying the field strength, we observe the annihilation of the WPs, and the formation of a 3D Chern insulator, a previously unrealised member of the family of 3D topological insulators (TIs). Surface measurements show, in unprecedented detail, how the Fermi arc states connecting the WPs evolve into TI surface states.
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Submitted 3 June, 2021;
originally announced June 2021.
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Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers
Authors:
Qianqian Wang,
Liemao Cao,
Shi-Jun Liang,
Weikang Wu,
Guangzhao Wang,
Ching Hua Lee,
Wee Liat Ong,
Hui Ying Yang,
Lay Kee Ang,
Shengyuan A. Yang,
Yee Sin Ang
Abstract:
Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N…
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Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices.
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Submitted 23 December, 2020; v1 submitted 14 December, 2020;
originally announced December 2020.
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Progress in epitaxial thin-film Na3Bi as a topological electronic material
Authors:
I. Di Bernardo,
J. Hellerstedt,
C. Liu,
G. Akhgar,
W. Wu,
S. A. Yang,
D. Culcer,
S. -K. Mo,
S. Adam,
M. T. Edmonds,
M. S. Fuhrer
Abstract:
Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising to…
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Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising topological electronic devices such as topological transistors.
In this review, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesised via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semi-classical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field driven topological phase transitions, are addressed, with an outlook towards current challenges and expected future progress.
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Submitted 1 September, 2020;
originally announced September 2020.
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Ideal Unconventional Weyl Point in a Chiral Photonic Metamaterial
Authors:
Yihao Yang,
Zhen Gao,
Xiaolong Feng,
Yue-Xin Huang,
Peiheng Zhou,
Shengyuan A. Yang,
Yidong Chong,
Baile Zhang
Abstract:
Unconventional Weyl points (WPs), carrying topological charge 2 or higher, possess interesting properties different from ordinary charge-1 WPs, including multiple Fermi arcs that stretch over a large portion of the Brillouin zone. Thus far, such WPs have been observed in chiral materials and acoustic metamaterials, but there has been no clean demonstration in photonics in which the unconventional…
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Unconventional Weyl points (WPs), carrying topological charge 2 or higher, possess interesting properties different from ordinary charge-1 WPs, including multiple Fermi arcs that stretch over a large portion of the Brillouin zone. Thus far, such WPs have been observed in chiral materials and acoustic metamaterials, but there has been no clean demonstration in photonics in which the unconventional photonic WPs are separated from trivial bands. We experimentally realize an ideal symmetry-protected photonic charge-2 WP in a three-dimensional topological chiral microwave metamaterial. We use field mapping to directly observe the projected bulk dispersion, as well as the two long surface arcs that form a noncontractible loop wrapping around the surface Brillouin zone. The surface states span a record-wide frequency window of around 22.7% relative bandwidth. We demonstrate that the surface states exhibit a novel topological self-collimation property and are robust against disorder. This work provides an ideal photonic platform for exploring fundamental physics and applications of unconventional WPs.
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Submitted 2 July, 2020;
originally announced July 2020.
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Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material
Authors:
Liemao Cao,
Guanghui Zhou,
Qingyun Wu,
Shengyuan A. Yang,
Hui Ying Yang,
Yee Sin Ang,
L. K. Ang
Abstract:
Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle…
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Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.
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Submitted 13 May, 2020; v1 submitted 21 April, 2020;
originally announced April 2020.
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Grapheayne: a class of low-energy carbon allotropes with diverse optoelectronic and topological properties
Authors:
Yan Gao,
Chengyong Zhong,
Shengyuan A. Yang,
Kai Liu,
Zhong-Yi Lu
Abstract:
A series of carbon allotropes with novel optoelectronic and rich topological properties is predicted by systematic first-principles calculations. These fascinating carbon allotropes can be derived by inserting acetylenic linkages (-C$\equiv$C-) into graphite, hence they are termed as grapheaynes. Grapheaynes possess two different space groups, $P$2/$m$ or $C$2/$m$, and contain simultaneously the…
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A series of carbon allotropes with novel optoelectronic and rich topological properties is predicted by systematic first-principles calculations. These fascinating carbon allotropes can be derived by inserting acetylenic linkages (-C$\equiv$C-) into graphite, hence they are termed as grapheaynes. Grapheaynes possess two different space groups, $P$2/$m$ or $C$2/$m$, and contain simultaneously the $sp$, $sp^2$, and $sp^3$ chemical bonds. They have formation energies lower than the already experimentally synthesized graphdiyne and other theoretically predicted carbon allotropes with acetylenic linkages. Particularly, when the width $n$ of grapheayne-$n$ exceeds 15, its cohesive energy is lower than that of diamond, and approaches that of graphite with increasing $n$. Remarkably, we find that some grapheaynes behave as semiconductors with direct narrow band gaps and own the highest absorption coefficients among all known semiconducting carbon allotropes, while some others are topological semimetals with nodal lines. Especially, some grapheaynes can be engineered with tunable direct band gaps in the range of 1.07-1.87 eV and have ideal properties for photovoltaic applications. Our work not only uncovers the unique atomic arrangement and prominent properties of the grapheayne family, but also offers a treasury that provides promising materials for catalyst, energy storage, molecular sieves, solar cell, and electronic devices.
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Submitted 4 August, 2019;
originally announced August 2019.
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Two-dimensional honeycomb borophene oxide: Strong anisotropy and nodal loop transformation
Authors:
Chengyong Zhong,
Weikang Wu,
Junjie He,
Guangqian Ding,
Yi Liu,
Dengfeng Li,
Shengyuan A. Yang,
Gang Zhang
Abstract:
The search for topological semimetals is mainly focused on heavy-element compounds as following the footsteps of previous research on topological insulators, with less attention on light-element materials. However, the negligible spin orbit coupling with light elements may turn out to be beneficial for realizing topological band features.Here, using first-principles calculations, we propose a new…
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The search for topological semimetals is mainly focused on heavy-element compounds as following the footsteps of previous research on topological insulators, with less attention on light-element materials. However, the negligible spin orbit coupling with light elements may turn out to be beneficial for realizing topological band features.Here, using first-principles calculations, we propose a new two-dimensional light-element material-the honeycomb borophene oxide (h-B2O), which has nontrivial topological properties.The proposed structure is based on the recently synthesized honeycomb borophene on Al (111) substrate [Sci. Bull. 63, 282 (2018)]. The h-B2O monolayer is completely flat, unlike the oxides of graphene or silicene. We systematically investigate the structural properties of h-B2O, and find that it has very good stability and exhibits significant mechanical anisotropy. Interestingly, the electronic band structure of h-B2O hosts a nodal loop centered around the Y point in the Brillouin zone, protected by the mirror symmetry. Furthermore, under moderate lattice strain, the single nodal loop can be transformed into two loops, each penetrating through the Brillouin zone. The loops before and after the transition are characterized by different Z*Z topological indices. Our work not only predicts a new two-dimensional material with interesting physical properties, but also offers an alternative approach to search for new topological phases in 2D light-element systems.
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Submitted 23 January, 2019; v1 submitted 6 October, 2018;
originally announced October 2018.
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Three-dimensional honeycomb carbon: Junction line distortion and novel emergent fermions
Authors:
Junping Hu,
Weikang Wu,
Chengyong Zhong,
Ning Liu,
Chuying Ouyang,
Hui Ying Yang,
Shengyuan A. Yang
Abstract:
Carbon enjoys a vast number of allotropic forms, each possessing unique properties determined by the lattice structures and bonding characters. Here, based on first-principles calculations, we propose a new three-dimensional carbon allotrope--hC28. We show that hC28 possesses exceptional energetic, dynamical, thermal, and mechanical stability. It is energetically more stable than most other synthe…
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Carbon enjoys a vast number of allotropic forms, each possessing unique properties determined by the lattice structures and bonding characters. Here, based on first-principles calculations, we propose a new three-dimensional carbon allotrope--hC28. We show that hC28 possesses exceptional energetic, dynamical, thermal, and mechanical stability. It is energetically more stable than most other synthesized or proposed carbon allotropes. The material has a relatively small bulk modulus, but is thermally stable at temperatures as high as 2000 K. The structural, mechanical, x-ray diffraction, and electronic properties are systematically investigated. Particularly, we show that its low-energy band structure hosts multiple unconventional emergent fermions, including the quadratic-contact-point fermions, the birefringent Dirac fermions, and the triple-point fermions. We construct effective models to characterize each kind of fermions. Our work not only discovers a new carbon allotropic form, it also reveals remarkable mechanical and electronic properties for this new material, which may pave the way towards both fundamental studies as well as practical applications.
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Submitted 27 June, 2018;
originally announced June 2018.
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Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
Authors:
Yee Sin Ang,
Shengyuan A. Yang,
C. Zhang,
Zhongshui Ma,
L. K. Ang
Abstract:
Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an electrostatic setting. Here we propose a class of all-electric-controlled valley filter, valve and logic gate based on the valley-contrasting transport in a merging…
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Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an electrostatic setting. Here we propose a class of all-electric-controlled valley filter, valve and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudo-magnetoresistance ratio of over 10,000\% can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical-reversibility in two-input universal Boolean gate. The (2+1) polarization states -- two distinct valleys plus a null polarization -- re-establish one-to-one input-to-output mapping, a crucial requirement for logical-reversibility, and significantly reduce the complexity of reversible circuits due to the built-in nature of valley degree of freedom. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.
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Submitted 28 November, 2017; v1 submitted 15 November, 2017;
originally announced November 2017.
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Three-dimensional Pentagon Carbon with a genesis of emergent fermions
Authors:
Chengyong Zhong,
Yuanping Chen,
Zhi-Ming Yu,
Yuee Xie,
Han Wang,
Shengyuan A. Yang,
Shengbai Zhang
Abstract:
Carbon, the basic building block of our universe, enjoys a vast number of allotropic structures. Owing to its bonding characteristic, most carbon allotropes possess the motif of hexagonal rings. Here, with first-principles calculations, we discover a new metastable three-dimensional carbon allotrope entirely composed of pentagon rings. The unique structure of this "Pentagon Carbon" leads to extrao…
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Carbon, the basic building block of our universe, enjoys a vast number of allotropic structures. Owing to its bonding characteristic, most carbon allotropes possess the motif of hexagonal rings. Here, with first-principles calculations, we discover a new metastable three-dimensional carbon allotrope entirely composed of pentagon rings. The unique structure of this "Pentagon Carbon" leads to extraordinary electronic properties, making it a cornucopia of emergent topological fermions. Under lattice strain, Pentagon Carbon exhibits topological phase transitions, generating a series of novel quasiparticles, from isospin-1 triplet fermions, to triply-degenerate fermions, and further to concatenated Weyl-loop fermions. Its Landau level spectrum also exhibits distinct features, including a huge number of almost degenerate chiral Landau bands, implying pronounced magneto-transport signals. Our work not only discovers a remarkable carbon allotrope with highly rare structural motifs, it also reveals a fascinating hierarchical particle genesis with novel topological fermions beyond the Dirac and Weyl paradigm.
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Submitted 10 June, 2017;
originally announced June 2017.