-
Strain engineering of valley-polarized hybrid excitons in a 2D semiconductor
Authors:
Abhijeet M. Kumar,
Douglas J. Bock,
Denis Yagodkin,
Edith Wietek,
Bianca Höfer,
Max Sinner,
Pablo Hernández López,
Sebastian Heeg,
Cornelius Gahl,
Florian Libisch,
Alexey Chernikov,
Ermin Malic,
Roberto Rosati,
Kirill I. Bolotin
Abstract:
Encoding and manipulating digital information in quantum degrees of freedom is one of the major challenges of today's science and technology. The valley indices of excitons in transition metal dichalcogenides (TMDs) are well-suited to address this challenge. Here, we demonstrate a new class of strain-tunable, valley-polarized hybrid excitons in monolayer TMDs, comprising a pair of energy-resonant…
▽ More
Encoding and manipulating digital information in quantum degrees of freedom is one of the major challenges of today's science and technology. The valley indices of excitons in transition metal dichalcogenides (TMDs) are well-suited to address this challenge. Here, we demonstrate a new class of strain-tunable, valley-polarized hybrid excitons in monolayer TMDs, comprising a pair of energy-resonant intra- and intervalley excitons. These states combine the advantages of bright intravalley excitons, where the valley index directly couples to light polarization, and dark intervalley excitons, characterized by low depolarization rates. We demonstrate that the hybridized state of dark KK' intervalley and defect-localized excitons exhibits a degree of circular polarization of emitted photons that is three times higher than that of the constituent species. Moreover, a bright KK intravalley and a dark KQ exciton form a coherently coupled hybrid state under energetic resonance, with their valley depolarization dynamics slowed down a hundredfold. Overall, these valley-polarized hybrid excitons with strain-tunable valley character emerge as prime candidates for valleytronic applications in future quantum and information technology.
△ Less
Submitted 16 February, 2025;
originally announced February 2025.
-
Strain activation of localized states in WSe2
Authors:
Oguzhan Yücel,
Denis Yagodkin,
Jan N. Kirchhof,
Abhijeet Kumar,
Adrian Dewambrechies,
Sviatoslav Kovalchuk,
Yuefeng Yu,
Kirill I. Bolotin
Abstract:
Single-photon emission centers generated by controlled atomic force microscopy (AFM) indentation in monolayer WSe\(_2\) on a flexible polymer substrate are explored for applications in quantum technologies. Here, we study the response of these emitters to the polymer substrate's strain state, which is controlled by selecting the indentation force and by gradually thermally annealing the samples. I…
▽ More
Single-photon emission centers generated by controlled atomic force microscopy (AFM) indentation in monolayer WSe\(_2\) on a flexible polymer substrate are explored for applications in quantum technologies. Here, we study the response of these emitters to the polymer substrate's strain state, which is controlled by selecting the indentation force and by gradually thermally annealing the samples. In the indented areas, we observe sharp new photoluminescence (PL) peaks in the regions 1.62--1.68 eV and 1.70--1.73 eV, characterized by sublinear power dependence and spectral wandering. We find that these peaks arise only when the indentation force exceeds a few \(μ\)N and generally redshift as the applied force increases. Conversely, after thermal annealing (\(T < 60^{\circ}\)C), WSe\(_2\) experiences strain relaxation, leading to a blueshift of the peaks' spectral position and their ultimate disappearance. Our analysis of the peaks' positions vs. strain allows us to draw several conclusions about the nature of these emission. Specifically, we elucidate the roles of excitonic confinement and hybridization between free excitons and defect-related states, a process activated by the strain level. Overall, our approach suggests that the energy of localized emitters may be controlled via strain engineering.
△ Less
Submitted 29 January, 2025; v1 submitted 16 February, 2024;
originally announced February 2024.
-
Nanomechanical absorption spectroscopy of 2D materials with femtowatt sensitivity
Authors:
Jan N. Kirchhof,
Yuefeng Yu,
Denis Yagodkin,
Nele Stetzuhn,
Daniel B. de Araújo,
Kostas Kanellopulos,
Samuel Manas-Valero,
Eugenio Coronado,
Herre van der Zant,
Stephanie Reich,
Silvan Schmid,
Kirill I. Bolotin
Abstract:
Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectro…
▽ More
Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane resonator vs. the photon energy of incoming light. This method is a direct measurement of absorption, which has practical advantages compared to common optical spectroscopy approaches. In the case of two-dimensional (2D) materials, NMS overcomes limitations inherent to conventional optical methods, such as the complications associated with measurements at high magnetic fields and low temperatures. In this work, we develop a protocol for NMS of 2D materials that yields two orders of magnitude improved sensitivity compared to previous approaches, while being simpler to use. To this end, we use electrical sample actuation, which simplifies the experiment and provides a reliable calibration for greater accuracy. Additionally, the use of low-stress silicon nitride membranes as our substrate reduces the noise-equivalent power to $NEP = 890 fW/\sqrt{Hz}$, comparable to commercial semiconductor photodetectors. We use our approach to spectroscopically characterize a two-dimensional transition metal dichalcogenide (WS$_2$), a layered magnetic semiconductor (CrPS$_4$), and a plasmonic supercrystal consisting of gold nanoparticles.
△ Less
Submitted 28 January, 2023;
originally announced January 2023.
-
Nanomechanical spectroscopy of 2D materials
Authors:
Jan N. Kirchhof,
Yuefeng Yu,
Gabriel Antheaume,
Georgy Gordeev,
Denis Yagodkin,
Peter Elliott,
Daniel B. de Araújo,
Sangeeta Sharma,
Stephanie Reich,
Kirill I. Bolotin
Abstract:
We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as…
▽ More
We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical resonator illuminated by a wavelength-tunable laser source. From the heating-related frequency shift of the resonator as well as its optical reflection measured as a function of photon energy, we obtain the real and imaginary parts of the dielectric function. Our measurements are unaffected by substrate-related screening and do not require any assumptions on the underling optical constants. This fast ($τ_{rise}$ $\sim$ 135 ns), sensitive (noise-equivalent power = 90 $\frac{pW}{\sqrt{Hz}}$ ), and broadband (1.2 $-$ 3.1 eV, extendable to UV-THz) method provides an attractive alternative to spectroscopic or ellipsometric characterisation techniques.
△ Less
Submitted 26 September, 2022; v1 submitted 14 March, 2022;
originally announced March 2022.
-
Ultrafast photocurrents in MoSe$_2$ probed by terahertz spectroscopy
Authors:
Denis Yagodkin,
Lukas Nadvornik,
Oliver Gueckstock,
Cornelius Gahl,
Tobias Kampfrath,
Kirill I. Bolotin
Abstract:
We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond…
▽ More
We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond timescale by out-of-plane currents due to the drift of photoexcited charge carriers in the surface electric field. The BL emission is generated by an in-plane shift current. Finally, we observe oscillations at about $23\,$THz in the emission from the BL sample. We attribute the oscillations to quantum beats between two excitonic states with energetic separation of $\sim100\,$meV.
△ Less
Submitted 21 December, 2020; v1 submitted 27 August, 2020;
originally announced August 2020.
