Showing 1–5 of 5 results for author: Wysmołek, A

Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing

Authors: Jakub Rogoza, Jakub Iwanski, Katarzyna Ludwiczak, Bartosz Furtak, Aleksandra Krystyna Dabrowska, Mateusz Tokarczyk, Johannes Binder, Andrzej Wysmolek

Abstract: Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To apply this material in the semiconductor industry, it is necessary to grow large-area layers on the wafer-scale. For this purpose, chemical vapor deposition methods are highly preferable. However, in the case of epitaxial B… ▽ More Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To apply this material in the semiconductor industry, it is necessary to grow large-area layers on the wafer-scale. For this purpose, chemical vapor deposition methods are highly preferable. However, in the case of epitaxial BN, its fragility and susceptibility to delamination and fold formation during wet processing, such as lithography, present significant challenges to its integration into device fabrication. In this work, we introduce a controlled delamination and redeposition method that effectively prevents the layer from degradation, allowing for multi-step lithographic processes. This approach is applicable to BN layers across a broad thickness range, from tens to hundreds of nanometers, and ensures compatibility with standard photolithographic techniques without compromising the material's intrinsic properties. By addressing key processing challenges, this method paves the way for integrating epitaxial BN into advanced semiconductor and optoelectronic technologies. △ Less

Submitted 30 January, 2025; originally announced January 2025.

Comments: 12 pages, 4 figures

MSC Class: n.a ACM Class: J.2

Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering-type scanning near-field optical microscope

Authors: Iris Niehues, Daniel Wigger, Korbinian Kaltenecker, Annika Klein-Hitpass, Philippe Roelli, Aleksandra K. Dąbrowska, Katarzyna Ludwiczak, Piotr Tatarczak, Janne O. Becker, Robert Schmidt, Martin Schnell, Johannes Binder, Andrzej Wysmołek, Rainer Hillenbrand

Abstract: Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excit… ▽ More Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excitation and emission through interaction with the nanofocus of the tip resulting in a sub-diffraction limited tip-enhanced PL hotspot. On the other hand, we show that indirect excitation and emission via scattering from the tip significantly increases the recorded PL intensity. This demonstrates that the tip-assisted PL (TAPL) process efficiently guides the generated light to the detector. We apply the TAPL method to map the in-plane dipole orientations of the hBN color centers on the nanoscale. This work promotes the widely available s-SNOM approach to applications in the quantum domain including characterization and optical control. △ Less

Submitted 25 January, 2025; originally announced January 2025.

Direction-sensitive graphene flow sensor

Authors: P. Kaźmierczak, J. Binder, K. Boryczko, T. Ciuk, W. Strupiński, R. Stępniewski, A. Wysmołek

Abstract: Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel approach allowing for the detection of a flow direction-dependent electric signal in aqueous solutions of salts, acids and bases. The key element in the proposed… ▽ More Graphene flow sensors hold great prospects for applications, but also encounter many difficulties, such as unwanted electrochemical phenomena, low measurable signal and limited dependence on the flow direction. This study proposes a novel approach allowing for the detection of a flow direction-dependent electric signal in aqueous solutions of salts, acids and bases. The key element in the proposed solution is the use of a reference electrode which allows external gating of the graphene structure. Using external gating enables to enhance substantially the amplitude of the flow-generated signal. Simultaneous measurement of the reference electrode current allows us to recover a flow-direction-sensitive component of the flow-induced voltage in graphene. The obtained results are discussed in terms of the Coulomb interaction and other phenomena which can be present at the interface of graphene with the aqueous solution. △ Less

Submitted 11 August, 2023; v1 submitted 2 August, 2023; originally announced August 2023.

Comments: 7 pages, 6 figures

Epitaxial hexagonal boron nitride for hydrogen generation by radiolysis of interfacial water

Authors: Johannes Binder, Aleksandra Krystyna Dąbrowska, Mateusz Tokarczyk, Katarzyna Ludwiczak, Rafał Bożek, Grzegorz Kowalski, Roman Stępniewski, Andrzej Wysmołek

Abstract: Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in the field of materials science. Two-dimensional crystals, such as hexagonal boron nitride (hBN), are very promising in this regard, as it was demonstrated that micrometer-sized exfoliated flakes are excellent barriers to… ▽ More Hydrogen is an important building block in global strategies towards a future green energy system. To make this transition possible, intense scientific efforts are needed, also in the field of materials science. Two-dimensional crystals, such as hexagonal boron nitride (hBN), are very promising in this regard, as it was demonstrated that micrometer-sized exfoliated flakes are excellent barriers to molecular hydrogen. However, it remains an open question whether large-area layers fabricated by industrially relevant methods preserve such promising properties. In this work we show that electron beam-induced splitting of water creates hBN bubbles that effectively store molecular hydrogen for weeks and under extreme mechanical deformation. We demonstrate that epitaxial hBN allows direct visualization and monitoring of the process of hydrogen generation by radiolysis of interfacial water. Our findings show that hBN is not only a potential candidate for hydrogen storage, but also holds promise for the development of unconventional hydrogen production schemes. △ Less

Submitted 23 October, 2022; originally announced November 2022.

Journal ref: Nano Letter 2023, 23, 4, 1267 - 1272

All-BN Distributed Bragg Reflectors Fabricated in a Single MOCVD Process

Authors: Arkadiusz Ciesielski, Jakub Iwański, Piotr Wróbel, Rafał Bożek, Sławomir Kret, Jakub Turczyński, Johannes Binder, Krzysztof P. Korona, Roman Stępniewski, Andrzej Wysmołek

Abstract: Distributed Bragg Reflectors (DBR) are well-established photonic structures that are used in many photonic applications. However, most of the DBRs are based on different materials or require post-process etching which can hinder integration with other components in the final photonic structure. Here, we demonstrate the fabrication of DBR structures consisting only of undoped boron nitride (BN) lay… ▽ More Distributed Bragg Reflectors (DBR) are well-established photonic structures that are used in many photonic applications. However, most of the DBRs are based on different materials or require post-process etching which can hinder integration with other components in the final photonic structure. Here, we demonstrate the fabrication of DBR structures consisting only of undoped boron nitride (BN) layers with high refractive index contrast by using Metal-Organic Chemical Vapor Deposition (MOCVD). This has been achieved in a single process, without the need for any post-process etching. The difference in the refractive index of the component BN layers stems from different degrees of porosity of the individual BN layers, which is a direct result of a different growth temperature. The fabricated DBR structures consist of 15.5 pairs of BN layers and exhibit a reflectance of 87+/-1% at the maximum. The wavelength of maximum reflectance can be tuned from 500 nm up to the Infrared Region (IR), by simply adjusting the growth periods of subsequent BN layers. We also demonstrate that the fabricated structures can be used to create an optical microcavity. The fabricated DBRs are very promising candidates for future applications, for example in combination with single-photon emitters in h-BN, which could allow the building of a cavity-based all-BN single-photon source. △ Less

Submitted 5 June, 2022; originally announced June 2022.

Comments: 23 Pages in total (15 in the main article + 8 in the supplemtary material), 15 figures in total (9 in the main article + 6 in the supplemtary material)