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Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells
Authors:
Johnpaul K. Pious,
Yannick Zwirner,
Huagui Lai,
Selina Olthof,
Quentin Jeangros,
Evgeniia Gilshtein,
Radha K. Kothandaraman,
Kerem Artuk,
Philipp Wechsler,
Cong Chen,
Christian M. Wolff,
Dewei Zhao,
Ayodhya. N. Tiwari,
Fan Fu
Abstract:
Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Sn perovskite solar cells (PSCs). However, the spatial distribution of SnF2 in the perovskite absorber is seldom investigated while essential for a comprehensive understanding of the exact role of the SnF2 additive. Herein, we revealed the spatial distribution of SnF2 additive and made structure-optoelectronic properties-flexi…
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Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Sn perovskite solar cells (PSCs). However, the spatial distribution of SnF2 in the perovskite absorber is seldom investigated while essential for a comprehensive understanding of the exact role of the SnF2 additive. Herein, we revealed the spatial distribution of SnF2 additive and made structure-optoelectronic properties-flexible photovoltaic performance correlation. We observed the chemical transformation of SnF2 to a fluorinated oxy-phase on the Pb-Sn perovskite film surface, due to its rapid oxidation. In addition, at the buried perovskite interface, we detected and visualized the accumulation of F- ions. We found that the photoluminescence quantum yield of Pb-Sn perovskite reached the highest value with 10 mol% SnF2 in the precursor solution. When integrating the optimized absorber in flexible devices, we obtained the flexible Pb-Sn perovskite narrow bandgap (1.24 eV) solar cells with an efficiency of 18.5% and demonstrated 23.1%-efficient flexible 4-terminal all-perovskite tandem cells.
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Submitted 24 October, 2022;
originally announced October 2022.
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High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition
Authors:
Pietro Caprioglio,
Fengshuo Zu,
Christian M. Wolff,
José A. Márquez Prieto,
Martin Stolterfoht,
Norbert Koch,
Thomas Unold,
Bernd Rech,
Steve Albrecht,
Dieter Neher
Abstract:
The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via transient and absolute photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the nea…
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The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via transient and absolute photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer and specifically at the perovskite/C60 interface. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C60 electron-transporting layer. The resulting solar cells exhibited a Voc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, bringing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3%. Our results demonstrate very high Voc values and efficiencies in Sr-containing quadruple cation perovskite pin solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.
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Submitted 29 October, 2018;
originally announced October 2018.
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The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells
Authors:
Martin Stolterfoht,
Pietro Caprioglio,
Christian M. Wolff,
José A. Márquez,
Joleik Nordmann,
Shanshan Zhang,
Daniel Rothhardt,
Ulrich Hörmann,
Alex Redinger,
Lukas Kegelmann,
Steve Albrecht,
Thomas Kirchartz,
Michael Saliba,
Thomas Unold,
Dieter Neher
Abstract:
Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. B…
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Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces.
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Submitted 22 October, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
