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Super-resolution imaging of nanoscale inhomogeneities in hBN-covered and encapsulated few-layer graphene
Authors:
Lina Jäckering,
Konstantin G. Wirth,
Lukas Conrads,
Jonas B. Profe,
Alexander Rothstein,
Hristiyana Kyoseva,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Christoph Stampfer,
Lutz Waldecker,
Thomas Taubner
Abstract:
Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these inhomogeneities is challenging. Recently, the visualization of stacking domains in encapsulated four-layer graphene (4LG) has been demonstrated with phonon polariton…
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Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these inhomogeneities is challenging. Recently, the visualization of stacking domains in encapsulated four-layer graphene (4LG) has been demonstrated with phonon polariton (PhP)-assisted near-field imaging. However, the underlying coupling mechanism and ability to image subdiffractional-sized inhomogeneities remain unknown. Here, we retrieve direct replicas and magnified images of subdiffractional-sized inhomogeneities in hBN-covered trilayer graphene (TLG) and encapsulated 4LG, enabled by the hyperlensing effect. This hyperlensing effect is mediated by hBN's hyperbolic PhP that couple to the FLG's plasmon polaritons. Using near-field microscopy, we identify the coupling by determining the polariton dispersion in hBN-covered TLG to be stacking-dependent. Our work demonstrates super-resolution and magnified imaging of inhomogeneities, paving the way for the realization of homogeneous encapsulated FLG transport samples to study correlated physics.
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Submitted 8 July, 2024; v1 submitted 5 July, 2024;
originally announced July 2024.
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Direct programming of confined Surface Phonon Polariton Resonators using the plasmonic Phase-Change Material In$_3$SbTe$_2$
Authors:
Lukas Conrads,
Luis Schüler,
Konstantin G. Wirth,
Matthias Wuttig,
Thomas Taubner
Abstract:
Tailoring light-matter interaction is essential to realize nanophotonic components. It can be achieved with surface phonon polaritons (SPhPs), an excitation of photons coupled with phonons of polar crystals, which also occur in 2d materials such as hexagonal boron nitride or anisotropic crystals. Ultra-confined resonances are observed by restricting the SPhPs to cavities. Phase-change materials (P…
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Tailoring light-matter interaction is essential to realize nanophotonic components. It can be achieved with surface phonon polaritons (SPhPs), an excitation of photons coupled with phonons of polar crystals, which also occur in 2d materials such as hexagonal boron nitride or anisotropic crystals. Ultra-confined resonances are observed by restricting the SPhPs to cavities. Phase-change materials (PCMs) enable non-volatile programming of these cavities based on a change in the refractive index. Recently, the new plasmonic PCM In$_3$SbTe$_2$ (IST) was introduced which can be reversibly switched from an amorphous dielectric state to a crystalline metallic one in the entire infrared to realize numerous nanoantenna geometries. However, reconfiguring SPhP resonators to modify the confined polaritons modes remains elusive. Here, we demonstrate direct programming of confined SPhP resonators by phase-switching IST on top of a polar silicon carbide crystal and investigate the strongly confined resonance modes with scanning near-field optical microscopy. Reconfiguring the size of the resonators themselves result in enhanced mode confinements up to a value of $λ/35$. Finally, unconventional cavity shapes with complex field patterns are explored as well. This study is a first step towards rapid prototyping of reconfigurable SPhP resonators that can be easily transferred to hyperbolic and anisotropic 2d materials.
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Submitted 19 October, 2023;
originally announced October 2023.
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Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform
Authors:
Nicholas S. Yama,
I-Tung Chen,
Srivatsa Chakravarthi,
Bingzhao Li,
Christian Pederson,
Bethany E. Matthews,
Steven R. Spurgeon,
Daniel E. Perea,
Mark G. Wirth,
Peter V. Sushko,
Mo Li,
Kai-Mei C. Fu
Abstract:
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In t…
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The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In this work we demonstrate that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.
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Submitted 19 May, 2023;
originally announced May 2023.
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Experimental observation of ABCB stacked tetralayer graphene
Authors:
Konstantin G. Wirth,
Jonas B. Profe,
Alexander Rothstein,
Hristiyana Kyoseva,
Dario Siebenkotten,
Lukas Conrads,
Lennart Klebl,
Ammon Fischer,
Bernd Beschoten,
Christoph Stampfer,
Dante M. Kennes,
Lutz Waldecker,
Thomas Taubner
Abstract:
In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scatt…
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In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scattering-type scanning near-field optical microscopy and confocal Raman microscopy to identify and characterize domains of ABCB stacked tetralayer graphene. We differentiate between the three stacking sequences by addressing characteristic interband contributions in the optical conductivity between 0.28 and 0.56 eV with amplitude and phase-resolved near-field nano-spectroscopy. By normalizing adjacent flakes to each other, we achieve good agreement between theory and experiment, allowing for the unambiguous assignment of ABCB domains in tetralayer graphene. These results establish near-field spectroscopy at the interband transitions as a semi-quantitative tool, enabling the recognition of ABCB domains in tetralyer graphene flakes and therefore, providing a basis to study correlation physics of this exciting phase.
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Submitted 15 September, 2022; v1 submitted 15 March, 2022;
originally announced March 2022.
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Observing 0D subwavelength-localized modes at ~100 THz protected by weak topology
Authors:
Jinlong Lu,
Konstantin G. Wirth,
Wenlong Gao,
Andreas Heßler,
Basudeb Sain,
Thomas Taubner,
Thomas Zentgraf
Abstract:
Topological photonic crystals (TPhCs) provide robust manipulation of light with built-in immunity to fabrication tolerances and disorder. Recently, it was shown that TPhCs based on weak topology with a dislocation inherit this robustness and further host topologically protected lower-dimensional localized modes. However, TPhCs with weak topology at optical frequencies have not been demonstrated so…
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Topological photonic crystals (TPhCs) provide robust manipulation of light with built-in immunity to fabrication tolerances and disorder. Recently, it was shown that TPhCs based on weak topology with a dislocation inherit this robustness and further host topologically protected lower-dimensional localized modes. However, TPhCs with weak topology at optical frequencies have not been demonstrated so far. Here, we use scattering-type scanning near field optical microscopy to verify mid-bandgap zero-dimensional light localization close to 100 THz in a TPhC with nontrivial Zak phase and an edge dislocation. We show that due to the weak topology, differently extended dislocation centers induce similarly strong light localization. The experimental results are supported by full-field simulations. Along with the underlying fundamental physics, our results lay a foundation for the application of TPhCs based on weak topology in active topological nanophotonics, and nonlinear and quantum optic integrated devices due to their strong and robust light localization.
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Submitted 25 February, 2022;
originally announced February 2022.
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Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain
Authors:
Roberto da Silva,
Gilson Wirth
Abstract:
We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We…
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We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We are sure to have an important tool to guide developers in building and analyzing low-frequency noise in semiconductor devices.
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Submitted 25 January, 2022;
originally announced January 2022.
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Threshold Voltage Jitter due to Random Telegraph Noise
Authors:
Gilson Wirth
Abstract:
With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and remain static over time. Besides these time-zero variability factors, factors that lead to performance variability from one instant in time to the other start playin…
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With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and remain static over time. Besides these time-zero variability factors, factors that lead to performance variability from one instant in time to the other start playing a significant role. Random Telegraph Noise (RTN) is among these relevant time-dependent variability sources. In this work we extend the knowledge of the time-dependent random variability induced by RTN, by providing a statistical model for transistor threshold voltage jitter produced by RTN. The area scaling of threshold voltage jitter is detailed and discussed, supporting designers in transistor sizing towards a more reliable design. Not only the jitter expected in a transistor is modeled, but also its variability among transistors that by design should be equal. Besides analytical modeling, Monte Carlo simulations are run. The simulations account for the charge carrier capture and emission events related to RTN, allowing the proper evaluation of the RTN related jitter. The Monte Carlo simulations validate the analytical model and illustrate the area scaling of jitter and its variability.
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Submitted 9 January, 2020;
originally announced January 2020.
