Demonstrating sub-electron noise performance in Single electron Sensitive Readout (SiSeRO) devices
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Peter Orel,
Kevan Donlon,
Steven W. Allen,
Marshall W. Bautz,
Brianna Cantrall,
Michael Cooper,
Beverly LaMarr,
Chris Leitz,
Eric Miller,
R. Glenn Morris,
Abigail Y. Pan,
Gregory Prigozhin,
Ilya Prigozhin,
Haley R. Stueber,
Daniel R. Wilkins
Abstract:
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charg…
▽ More
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charge is transferred into the back gate region, the transistor current is modulated. With our first generation SiSeRO devices, we previously achieved a responsivity of around 800 pA per electron, an equivalent noise charge (ENC) of 4.5 electrons root mean square (RMS), and a full width at half maximum (FWHM) spectral resolution of 130 eV at 5.9 keV, at a readout speed of 625 Kpixel/s and for a detector temperature of 250 K. Importantly, since the charge signal remains unaffected by the SiSeRO readout process, we have also been able to implement Repetitive Non-Destructive Readout (RNDR), achieving an improved ENC performance. In this paper, we demonstrate sub-electron noise sensitivity with these devices, utilizing an enhanced test setup optimized for RNDR measurements, with excellent temperature control, improved readout circuitry, and advanced digital filtering techniques. We are currently fabricating new SiSeRO detectors with more sensitive and RNDR-optimized amplifier designs, which will help mature the SiSeRO technology in the future and eventually lead to the pathway to develop active pixel sensor (APS) arrays using sensitive SiSeRO amplifiers on each pixel. Active pixel devices with sub-electron sensitivity and fast readout present an exciting option for next generation, large area astronomical X-ray telescopes requiring fast, low-noise megapixel imagers.
△ Less
Submitted 23 July, 2024;
originally announced July 2024.
Single electron Sensitive Readout (SiSeRO) X-ray detectors: Technological progress and characterization
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Peter Orel,
R. G. Morris,
Daniel R. Wilkins,
Steven W. Allen,
Gregory Prigozhin,
Beverly LaMarr,
Andrew Malonis,
Richard Foster,
Marshall W. Bautz,
Kevan Donlon,
Michael Cooper,
Christopher Leitz
Abstract:
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have…
▽ More
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. Characterization was performed for a number of prototype sensors with different device architectures, e.g. location of the internal gate, MOSFET polysilicon gate structure, and location of the trough in the internal gate with respect to the source and drain of the MOSFET (the trough is introduced to confine the charge in the internal gate). Using a buried-channel SiSeRO, we have achieved a charge/current conversion gain of >700 pA per electron, an equivalent noise charge (ENC) of around 6 electrons root mean square (RMS), and a full width half maximum (FWHM) of approximately 140 eV at 5.9 keV at a readout speed of 625 Kpixel/s. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the characterization test results of the SiSeRO prototypes. We also discuss the potential to implement Repetitive Non-Destructive Readout (RNDR) with these devices and the preliminary results which can in principle yield sub-electron ENC performance. Additional measurements and detailed device simulations will be essential to mature the SiSeRO technology. However, this new device class presents an exciting technology for next generation astronomical X-ray telescopes requiring fast, low-noise, radiation hard megapixel imagers with moderate spectroscopic resolution.
△ Less
Submitted 1 August, 2022;
originally announced August 2022.
