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Showing 1–2 of 2 results for author: Wilkins, D R

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  1. arXiv:2407.16754  [pdf, other

    astro-ph.IM astro-ph.HE physics.ins-det

    Demonstrating sub-electron noise performance in Single electron Sensitive Readout (SiSeRO) devices

    Authors: Tanmoy Chattopadhyay, Sven Herrmann, Peter Orel, Kevan Donlon, Steven W. Allen, Marshall W. Bautz, Brianna Cantrall, Michael Cooper, Beverly LaMarr, Chris Leitz, Eric Miller, R. Glenn Morris, Abigail Y. Pan, Gregory Prigozhin, Ilya Prigozhin, Haley R. Stueber, Daniel R. Wilkins

    Abstract: Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charg… ▽ More

    Submitted 23 July, 2024; originally announced July 2024.

    Comments: To appear in SPIE Astronomical Telescopes + Instrumentation proceedings 2024

  2. arXiv:2208.01082  [pdf, other

    astro-ph.IM astro-ph.HE hep-ex physics.ins-det

    Single electron Sensitive Readout (SiSeRO) X-ray detectors: Technological progress and characterization

    Authors: Tanmoy Chattopadhyay, Sven Herrmann, Peter Orel, R. G. Morris, Daniel R. Wilkins, Steven W. Allen, Gregory Prigozhin, Beverly LaMarr, Andrew Malonis, Richard Foster, Marshall W. Bautz, Kevan Donlon, Michael Cooper, Christopher Leitz

    Abstract: Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have… ▽ More

    Submitted 1 August, 2022; originally announced August 2022.

    Comments: To appear in SPIE Proceedings of Astronomical Telescopes + Instrumentation, 2022