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Detecting, distinguishing, and spatiotemporally tracking photogenerated charge and heat at the nanoscale
Authors:
Hannah L. Weaver,
Cora M. Went,
Joeson Wong,
Dipti Jasrasaria,
Eran Rabani,
Harry A. Atwater,
Naomi S. Ginsberg
Abstract:
Since dissipative processes are ubiquitous in semiconductors, characterizing how electronic and thermal energy transduce and transport at the nanoscale is vital for understanding and leveraging their fundamental properties. For example, in low-dimensional transition metal dichalcogenides (TMDCs), excess heat generation upon photoexcitation is difficult to avoid since even with modest injected exci…
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Since dissipative processes are ubiquitous in semiconductors, characterizing how electronic and thermal energy transduce and transport at the nanoscale is vital for understanding and leveraging their fundamental properties. For example, in low-dimensional transition metal dichalcogenides (TMDCs), excess heat generation upon photoexcitation is difficult to avoid since even with modest injected exciton densities, exciton-exciton annihilation still occurs. Both heat and photoexcited electronic species imprint transient changes in the optical response of a semiconductor, yet the unique signatures of each are difficult to disentangle in typical spectra due to overlapping resonances. In response, we employ stroboscopic optical scattering microscopy (stroboSCAT) to simultaneously map both heat and exciton populations in few-layer \ch{MoS2} on relevant nanometer and picosecond length- and time scales and with 100-mK temperature sensitivity. We discern excitonic contributions to the signal from heat by combining observations close to and far from exciton resonances, characterizing photoinduced dynamics for each. Our approach is general and can be applied to any electronic material, including thermoelectrics, where heat and electronic observables spatially interplay, and lays the groundwork for direct and quantitative discernment of different types of coexisting energy without recourse to complex models or underlying assumptions.
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Submitted 5 August, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics
Authors:
Cora M. Went,
Joeson Wong,
Phillip R. Jahelka,
Michael Kelzenberg,
Souvik Biswas,
Harry A. Atwater
Abstract:
Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for t…
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Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for transferring metal contacts that does not require aligned lithography. Using this technique, we fabricate vertical Schottky-junction $WS_2$ solar cells with Ag and Au as asymmetric work function contacts. Under laser illumination, we observe rectifying behavior and open-circuit voltage above 500 mV in devices with transferred contacts, in contrast to resistive behavior and open-circuit voltage below 15 mV in devices with evaporated contacts. One-sun measurements and device simulation results indicate that this metal transfer process could enable high-specific-power vertical Schottky-junction transition metal dichalcogenide photovoltaics, and we anticipate that this technique will lead to advances for two-dimensional devices more broadly.
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Submitted 4 April, 2019; v1 submitted 19 March, 2019;
originally announced March 2019.
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Electrical Control of Linear Dichroism in Black Phosphorus from the Visible to Mid-Infrared
Authors:
Michelle C. Sherrott,
William S. Whitney,
Deep Jariwala,
Cora M. Went,
Joeson Wong,
George R. Rossman,
Harry A. Atwater
Abstract:
The incorporation of electrically tunable materials into photonic structures such as waveguides and metasurfaces enables dynamic control of light propagation by an applied potential. While many materials have been shown to exhibit electrically tunable permittivity and dispersion, including transparent conducting oxides (TCOs) and III-V semiconductors and quantum wells, these materials are all opti…
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The incorporation of electrically tunable materials into photonic structures such as waveguides and metasurfaces enables dynamic control of light propagation by an applied potential. While many materials have been shown to exhibit electrically tunable permittivity and dispersion, including transparent conducting oxides (TCOs) and III-V semiconductors and quantum wells, these materials are all optically isotropic in the propagation plane. In this work, we report the first known example of electrically tunable linear dichroism, observed here in few-layer black phosphorus (BP), which is a promising candidate for multi-functional, broadband, tunable photonic elements. We measure active modulation of the linear dichroism from the mid-infrared to visible frequency range, which is driven by anisotropic quantum-confined Stark and Burstein-Moss effects, and field-induced forbidden-to-allowed optical transitions. Moreover, we observe high BP absorption modulation strengths, approaching unity for certain thicknesses and photon energies.
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Submitted 29 September, 2017;
originally announced October 2017.