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Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures
Authors:
Jinbang Hu,
Xiansi Wang,
Chaoqin Huang,
Fei Song,
Justin W Wells
Abstract:
Herein, we report the reversible structural transition of single-layer VSe2 grown on Au(111) through alternating thermal annealing and Se replenishment. Using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we demonstrate the epitaxial growth of high-quality VSe2 on Au(111) with the octahedral (1T) structure and the Se-vacancy-induced transformation of VS…
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Herein, we report the reversible structural transition of single-layer VSe2 grown on Au(111) through alternating thermal annealing and Se replenishment. Using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we demonstrate the epitaxial growth of high-quality VSe2 on Au(111) with the octahedral (1T) structure and the Se-vacancy-induced transformation of VSe2 from the metallic moiré (1T) phase to the semiconducting (2H) phase. With convincing agreement between the experimental results and DFT calculations, the nanostructure near the grain boundary in the defective intermediate phase is confirmed, as well as the reaction pathway with Se gradually depleting at elevated temperatures. Importantly, it is revealed that the density of the linear Se defects plays a crucial role in the formation of the 2H domain phase due to the increment of the in-plane lattice parameter after Se desorption and the better thermal stability of the 2H phase compared to the 1T phase. The proper control of the density of Se atoms in the topmost Se layer of VSe2 could feasibly manipulate the ratio between the 1T phase and the 2H phase in the steak-shaped domain, which is regarded as a good platform for 2D homojunctions in nanoelectronics.
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Submitted 18 June, 2024; v1 submitted 30 January, 2024;
originally announced January 2024.
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Initial Stages of Water Absorption on $\mathbf{CeO}_{2}$ Surfaces at Very Low Temperatures for Understanding Anti-Icing Coatings
Authors:
Anna Cecilie Åsland,
Simon P. Cooil,
Damir Mamedov,
Håkon I. Røst,
Johannes Bakkelund,
Zheshen Li,
Smagul Karazhanov,
Justin W. Wells
Abstract:
Anti-icing coatings are intended to prevent ice formation on surfaces, minimising the risk of surface-related damage and also reducing ice-related hazards in society. $\mathrm{CeO}_{2}$ coatings are robust, hydrophobic, and transmit light, thus they are suitable for a range of applications. However, their evolving surface chemistry during the initial stages of $\mathrm{H}_{2}\mathrm{O}$ exposure a…
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Anti-icing coatings are intended to prevent ice formation on surfaces, minimising the risk of surface-related damage and also reducing ice-related hazards in society. $\mathrm{CeO}_{2}$ coatings are robust, hydrophobic, and transmit light, thus they are suitable for a range of applications. However, their evolving surface chemistry during the initial stages of $\mathrm{H}_{2}\mathrm{O}$ exposure at very low temperatures has not been investigated, despite that this is important for understanding their anti-icing properties. To study this, $\mathrm{CeO}_{2}$ coatings were grown by sputter deposition, cooled to $\approx100\,$K and exposed to a $\mathrm{H}_{2}\mathrm{O}$ atmosphere at $1\times10^{-8}\,\mathrm{mbar}$. We demonstrate the usefulness of X-ray photoelectron spectroscopy (XPS) as a tool for investigating the anti-icing properties of surfaces. We present XPS measurements of $\mathrm{CeO}_{2}$ coatings before and after exposure to $\mathrm{H}_{2}\mathrm{O}$, in-situ and at cryogenic temperatures. XPS reveals that little to no ice forms on the surface of $\mathrm{CeO}_{2}$ after the $\mathrm{H}_{2}\mathrm{O}$ exposure at $\approx100\,$K. In contrast, ice was observed all over the sample holder on which the $\mathrm{CeO}_{2}$ was mounted. These findings suggest that $\mathrm{CeO}_{2}$ is a promising candidate for future anti-icing coatings.
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Submitted 10 May, 2024; v1 submitted 8 November, 2023;
originally announced November 2023.
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Low Temperature Growth of Graphene on Semiconductor
Authors:
Håkon I. Røst,
Rajesh K. Chellappan,
Frode S. Strand,
Antonija Grubišić-Čabo,
Benjamen P. Reed,
Mauricio J. Prieto,
Liviu C. Tǎnase,
Lucas de Souza Caldas,
Thipusa Wongpinij,
Chanan Euaruksakul,
Thomas Schmidt,
Anton Tadich,
Bruce C. C. Cowie,
Zheshen Li,
Simon P. Cooil,
Justin W. Wells
Abstract:
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical r…
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The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.
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Submitted 27 November, 2020;
originally announced November 2020.
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Imaging protein interactions in vivo with sub-cellular resolution
Authors:
Valerica Raicu,
Michael R. Stoneman,
Russell Fung,
Mike Melnichuk,
David B. Jansma,
Luca Pisterzi,
Michael Fox,
James W. Wells,
Dilano K. Saldin
Abstract:
Resonant Energy Transfer (RET) from an optically excited donor molecule (D) to a non-excited acceptor molecule (A) residing nearby is widely used to detect molecular interactions in living cells. Stoichiometric information, such as the number of proteins forming a complex, has been obtained so far for a handful of proteins, but only after exposing the sample sequentially to at least two differen…
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Resonant Energy Transfer (RET) from an optically excited donor molecule (D) to a non-excited acceptor molecule (A) residing nearby is widely used to detect molecular interactions in living cells. Stoichiometric information, such as the number of proteins forming a complex, has been obtained so far for a handful of proteins, but only after exposing the sample sequentially to at least two different excitation wavelengths. During this lengthy process of measurement, the molecular makeup of a cellular region may change, and this has so far limited the applicability of RET to determination of cellular averages. Here we demonstrate a method for imaging protein complex distribution in living cells with sub-cellular spatial resolution, which relies on a spectrally-resolved two-photon microscope, a simple but competent theory, and a keen selection of fluorescent tags. This technology may eventually lead to tracking dynamics of macromolecular complex formation and dissociation with spatial resolution inside living cells.
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Submitted 13 October, 2008;
originally announced October 2008.
