Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor
Authors:
Takeshi G. Tsuru,
Hideaki Matsumura,
Ayaki Takeda,
Takaaki Tanaka,
Shinya Nakashima,
Yasuo Arai,
Koji Mori,
Ryota Takenaka,
Yusuke Nishioka,
Takayoshi Kohmura,
Takaki Hatsui,
Takashi Kameshima,
Kyosuke Ozaki,
Yoshiki Kohmura,
Tatsuya Wagai,
Dai Takei,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Hiroki Kamehama,
Sumeet Shrestha
Abstract:
We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A f…
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We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$α$ and K$β$. Moreover, we produced a fully depleted layer with a thickness of $500~{\rm μm}$. The event-driven readout mode has already been successfully demonstrated.
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Submitted 20 August, 2014;
originally announced August 2014.