Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study
Authors:
Fatima Z. Tijent,
Mustapha Faqir,
Paul L. Voss,
Jean-Paul Salvestrini,
Abdallah Ougazzaden
Abstract:
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond substrate. The obtained devices exhibit improved thermal performance compared to SiO2/GaN/sapphire HEMT. The lattice temperature was reduced from 507…
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In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond substrate. The obtained devices exhibit improved thermal performance compared to SiO2/GaN/sapphire HEMT. The lattice temperature was reduced from 507 K in SiO2/GaN/sapphire to 372 K in h-BN/GaN/diamond HEMT. The temperature decrease enhances the drain current and transconductance to 900 mA/mm and 250 mS/mm, corresponding to a 47 % improvement. In addition, the total thermal resistance Rth is reduced by a factor of 5 from 27 K.mm/W in GaN/sapphire HEMT to 5.5 K.mm/W in GaN/diamond HEMT. This study indicates that h-BN integration in GaN HEMT as a top heat spreader and a release layer for transfer to diamond substrate can be a promising solution to reduce self-heating effects and extend the device lifetime and reliability.
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Submitted 26 January, 2024;
originally announced January 2024.
Characteristics of GRIFFIN high-purity germanium clover detectors
Authors:
U. Rizwan,
A. B. Garnsworthy,
C. Andreoiu,
G. C. Ball,
A. Chester,
T. Domingo,
R. Dunlop,
G. Hackman,
E. T. Rand,
J. K. Smith,
K. Starosta,
C. E. Svensson,
P. Voss,
J. Williams
Abstract:
The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each…
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The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each crystal were measured using a combination of analogue and digital data acquisition techniques. The absolute efficiency and add-back factors are determined for the energy range of 80 - 3450 keV. The detectors show excellent performance with an average over all 64 crystals of a FWHM energy resolution of 1.89(6) keV and relative efficiency with respect to a 3"x3" NaI detector of 41(1)% at 1.3 MeV.
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Submitted 14 November, 2017;
originally announced November 2017.
