Showing 1–11 of 11 results for author: Villegas, J

Investigating irradiation effects and space charge sign inversion in n-type Low Gain Avalanche Detectors

Authors: Veronika Kraus, Margarita Biveinytė, Marcos Fernandez Garcia, Salvador Hidalgo, Michael Moll, Jairo Villegas, Moritz Wiehe

Abstract: Low Gain Avalanche Detectors built on n-type substrate (nLGADs) have been developed by IMB-CNM to enhance the detection of low-penetrating particles, with a wide range of applications from medicine, industry to synergies with developments for high-energy physics (HEP). In this work, irradiation effects on nLGADs were investigated through proton irradiation at the CERN PS-IRRAD facility up to proto… ▽ More Low Gain Avalanche Detectors built on n-type substrate (nLGADs) have been developed by IMB-CNM to enhance the detection of low-penetrating particles, with a wide range of applications from medicine, industry to synergies with developments for high-energy physics (HEP). In this work, irradiation effects on nLGADs were investigated through proton irradiation at the CERN PS-IRRAD facility up to proton fluences of $10^{14}\,\mathrm{cm}^{-2}$. Electrical characterization before and after irradiation reveals space charge sign inversion of the n-type bulk, leading to significant modifications in the depletion behavior and electric field distribution. Utilizing UV TCT and TPA-TCT measurements, the impact of irradiation on the electric fields and the gain are studied in more detail, confirming a change of sensor depletion and a reduced electric field in the gain layer. The results suggest that donor removal in nLGADs is stronger pronounced already at lower fluences compared to acceptor removal in traditional p-type LGADs. These findings provide not only first insights into the effects of irradiation on nLGADs but also contribute to the development of methods to quantify the donor removal. △ Less

Submitted 9 April, 2025; v1 submitted 4 April, 2025; originally announced April 2025.

Comments: 4 pages, 3 figures, prepared for the proceedings of the Vienna Conference on Instrumentation as a special issue of Nuclear Instruments & Methods in Physics Research, Section A. Updated acknowledgments

Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain

Authors: E. Navarrete Ramos, J. Duarte-Campderros, M. Fernández, G. Gómez, J. González, S. Hidalgo, R. Jaramillo, P. Martínez Ruiz del Árbol, M. Moll, C. Quintana, A. K. Sikdar, I. Vila, J. Villegas

Abstract: In this radiation tolerance study, Low Gain Avalanche Detectors (LGADs) with a carbon-enriched broad and shallow multiplication layer were examined in comparison to identical non-carbonated LGADs. Manufactured at IMB-CNM, the sensors underwent neutron irradiation at the TRIGA reactor in Ljubljana, reaching a fluence of $1.5e^{15} {n_{eq}} cm^{-2}$. The results revealed a smaller deactivation of bo… ▽ More In this radiation tolerance study, Low Gain Avalanche Detectors (LGADs) with a carbon-enriched broad and shallow multiplication layer were examined in comparison to identical non-carbonated LGADs. Manufactured at IMB-CNM, the sensors underwent neutron irradiation at the TRIGA reactor in Ljubljana, reaching a fluence of $1.5e^{15} {n_{eq}} cm^{-2}$. The results revealed a smaller deactivation of boron and improved resistance to radiation in carbonated LGADs. The study demonstrated the potential benefits of carbon enrichment in mitigating radiation damage effects, particularly the acceptor removal mechanism, reducing the acceptor removal constant by more than a factor of two. Additionally, time resolution and collected charge degradation due to irradiation were observed, with carbonated samples exhibiting better radiation tolerance. A noise analysis focused on baseline noise and spurious pulses showed the presence of thermal-generated dark counts attributed to a too narrow distance between the gain layer end and the p-stop implant at the periphery of the pad for the characterized LGAD design; however, without significant impact of operation performance. △ Less

Submitted 1 April, 2025; v1 submitted 3 June, 2024; originally announced June 2024.

Journal ref: Volume 1074, May 2025, 170309

Memristive effects in YBa2Cu3O7-x devices with transistor-like structure

Authors: Aurélien Lagarrigue, Carolina de Dios, Salvatore Mesoraca, Santiago Carreira, Vincent Humbert, Javier Briatico, Juan Trastoy, Javier E. Villegas

Abstract: Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-T_C superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produc… ▽ More Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-T_C superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produce memory effects. These effects are triggered electrically in a three-terminal device whose structure is reminiscent of a transistor, consisting of a YBCO channel and an Al gate. The Al/YBCO interface, which controls the gate conductance, displays a giant, bipolar, reversible switching across a continuum of non-volatile conductance states that span over two Decades. This phenomenon is controlled by the gate voltage magnitude and is caused by oxygen exchange between YBCO and Al. Concomitantly, the channel shows a gradual, irreversible superconductor-to-insulator transition that retains a memory of the power dissipated in the device, and can be explained by induced bulk disorder. The observed effects, and the understanding of the interplay between the underlying mechanisms, constitute interesting ingredients for the design and realization of novel memristors and switches for superconducting electronics. △ Less

Submitted 21 June, 2023; originally announced June 2023.

A High-Speed Waveguide Integrated InSe Photodetector on SiN Photonics for NIR Applications

Authors: Srinvasa Reddy Tamalampudi, Juan Esteban Villegas, Ghada Dushaq, Raman Sankar, Bruna Paredes, Mahmoud Rasras

Abstract: On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra-high carrier mobility and outstanding photo-responsivity. Here, we report a high-speed photodetector based on a multilayer 90 nm thick InSe integrated… ▽ More On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra-high carrier mobility and outstanding photo-responsivity. Here, we report a high-speed photodetector based on a multilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide. The device exhibits a low dark current of 10 nA at 1V bias, a remarkable photoresponsivity of 0.38 AW-1, and high external quantum efficiency of 48.4% measured at 5 V bias. This performance is tested at near-infrared (NIR) 976 nm wavelength under ambient conditions. Furthermore, using numerical and experimental investigations, the estimated absorption coefficient per unit length is 0.11dB/um. To determine the dynamic response of the photodetector, its small and large signal frequency response are also evaluated. A 3-dB radiofrequency (RF) bandwidth of 85 MHz is measured with an open-eye diagram observed at 1 Gbit/s data transmission. Given these outstanding optoelectronic merits, active photonic devices based on integrated multilayer InSe can be realized for a variety of applications including short-reach optical interconnects, LiDAR imaging, and biosensing. △ Less

Submitted 1 May, 2023; originally announced May 2023.

Comments: 15 pages, 6 figures

A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics

Authors: Srinivasa Reddy Tamalampudi, Ghada Dushaq, Juan Esteban Villegas, Bruna Paredes, Mahmoud S. Rasras

Abstract: Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift w… ▽ More Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift without any amplitude modulation. However, for the transverse-magnetic (TM) polarization, both amplitude and phase modulation are observed. The corresponding wavelength shift and half-wave voltage length product (V_π.l) for the TE polarization are 1.78 pm/V and 0.9 V.cm, respectively. These values are enhanced for the TM polarizations and correspond to 6.65 pm/V and 0.28 V.cm, respectively. The dynamic radio frequency (RF) response of the devices was also tested at different bias conditions. Remarkably, the device exhibits a 1.6 MHz and 2.1 MHz response at 0 V and 7 V bias, respectively. Based on these findings, the integration of 2D GaGeTe on the silicon photonics platform has great potential for the next generation of integrated photonic applications such as switches and phase shifters. △ Less

Submitted 3 December, 2022; originally announced December 2022.

Comments: 8 pages 5 figures

Anisotropic Van der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

Authors: Ghada Dushaq, Juan Esteban Villegas, Bruna Paredes, Srinivasa Reddy Tamalampudi, Mahmoud S. Rasras

Abstract: In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility of on-chip light management. A 2D GeAs is stamped into an ultra-compact silicon waveguide four-way crossing optimized for operation in the O-optical band. The m… ▽ More In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility of on-chip light management. A 2D GeAs is stamped into an ultra-compact silicon waveguide four-way crossing optimized for operation in the O-optical band. The measured optical transmission spectra indicated a remarkable discrepancy between the in-plane crystal optical axes with an attenuation ratio of ~ 3.5 (at 1330 nm). Additionally, the effect of GeAs crystal orientation on the electro-optic transmission performance is demonstrated on a straight waveguide. A notable 50 % reduction in responsivity was recorded for devices constructed with cross direction compared to devices with a crystal a-direction parallel to the light polarization. This extraordinary optical anisotropy, combined with a high refractive index ~ 4 of 2D GeAs, opens possibilities for efficient on-chip light manipulation in photonic devices. △ Less

Submitted 2 December, 2022; originally announced December 2022.

First Results for the pLGAD Sensor for Low-Penetrating Particles

Authors: Waleed Khalid, Manfred Valentan, Albert Doblas, David Flores, Salvador Hidalgo, Gertrud Konrad, Johann Marton, Neil Moffat, Daniel Moser, Sebastian Onder, Giulio Pellegrini, Jairo Villegas

Abstract: Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have been developed for applications in High Energy Physics, but lack two characteristics needed for the measurement of low-energy protons (<60 keV): a thin entranc… ▽ More Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have been developed for applications in High Energy Physics, but lack two characteristics needed for the measurement of low-energy protons (<60 keV): a thin entrance window (in the order of tens of nm) and the efficient amplification of signals created near the sensor's surface (in a depth below 1 um). In this paper we present the so-called proton Low Gain Avalanche Detector (pLGAD) sensor concept and some results from characterization of the first prototypes of the sensor. The pLGAD is specifically designed to detect low-energy protons, and other low-penetrating particles. It will have a higher detection efficiency than non-silicon technologies, and promises to be a lot cheaper and easier to operate than competing silicon technologies. △ Less

Submitted 19 July, 2022; v1 submitted 13 July, 2022; originally announced July 2022.

Comments: 5 pages, 5 figuures, VCI 2022

Superconducting bimodal ionic photo-memristor

Authors: Ralph El Hage, Vincent Humbert, Victor Rouco, Anke Sander, Jérôme Charliac, Salvatore Mesoraca, Juan Trastoy, Javier Briatico, Jacobo Santamaría, Javier E. Villegas

Abstract: Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to develop… ▽ More Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to developing devices that present an analogous response to optical excitation. Here we realize a new class of device, a tunnelling photo-memristor, whose behaviour is bimodal: both electrical and optical stimuli can trigger the switching across resistance states in a way determined by the dual optical-electrical history. This unique behaviour is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The microscopic mechanism at play is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. Oxygen exchange is controlled here via illumination by exploiting a competition between electrochemistry, photovoltaic effects and photo-assisted ion migration. In addition to their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, beyond facilitating the high connectivity required in neuromorphic circuits, brings photo-memristive effects to the realm of superconducting electronics. △ Less

Submitted 20 April, 2022; originally announced April 2022.

Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications

Authors: A. Doblas, D. Flores, S. Hidalgo, N. Moffat, G. Pellegrini, D. Quirion, J. Villegas, D. Maneuski, M. Ruat, P. Fajardo

Abstract: LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area betw… ▽ More LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and to reach excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for X-Ray applications by developing a new generation of iLGADs. The periphery of the first iLGAD generation is optimized by means of TCAD tools, making them suitable for X-Ray irradiations thanks to the double side optimization. The fabricated iLGAD sensors exhibit good electrical performances before and after an X-Ray irradiation. The second iLGAD generation is able to withstand the same voltage, as contrary to the first iLGAD generation after irradiation. △ Less

Submitted 1 June, 2022; v1 submitted 3 February, 2022; originally announced February 2022.

The ELFIN Mission

Authors: V. Angelopoulos, E. Tsai, L. Bingley, C. Shaffer, D. L. Turner, A. Runov, W. Li, J. Liu, A. V. Artemyev, X. -J. Zhang, R. J. Strangeway, R. E. Wirz, Y. Y. Shprits, V. A. Sergeev, R. P. Caron, M. Chung, P. Cruce, W. Greer, E. Grimes, K. Hector, M. J. Lawson, D. Leneman, E. V. Masongsong, C. L. Russell, C. Wilkins , et al. (57 additional authors not shown)

Abstract: The Electron Loss and Fields Investigation with a Spatio-Temporal Ambiguity-Resolving option (ELFIN-STAR, or simply: ELFIN) mission comprises two identical 3-Unit (3U) CubeSats on a polar (~93deg inclination), nearly circular, low-Earth (~450 km altitude) orbit. Launched on September 15, 2018, ELFIN is expected to have a >2.5 year lifetime. Its primary science objective is to resolve the mechanism… ▽ More The Electron Loss and Fields Investigation with a Spatio-Temporal Ambiguity-Resolving option (ELFIN-STAR, or simply: ELFIN) mission comprises two identical 3-Unit (3U) CubeSats on a polar (~93deg inclination), nearly circular, low-Earth (~450 km altitude) orbit. Launched on September 15, 2018, ELFIN is expected to have a >2.5 year lifetime. Its primary science objective is to resolve the mechanism of storm-time relativistic electron precipitation, for which electromagnetic ion cyclotron (EMIC) waves are a prime candidate. From its ionospheric vantage point, ELFIN uses its unique pitch-angle-resolving capability to determine whether measured relativistic electron pitch-angle and energy spectra within the loss cone bear the characteristic signatures of scattering by EMIC waves or whether such scattering may be due to other processes. Pairing identical ELFIN satellites with slowly-variable along-track separation allows disambiguation of spatial and temporal evolution of the precipitation over minutes-to-tens-of-minutes timescales, faster than the orbit period of a single low-altitude satellite (~90min). Each satellite carries an energetic particle detector for electrons (EPDE) that measures 50keV to 5MeV electrons with deltaE/E<40% and a fluxgate magnetometer (FGM) on a ~72cm boom that measures magnetic field waves (e.g., EMIC waves) in the range from DC to 5Hz Nyquist (nominally) with <0.3nT/sqrt(Hz) noise at 1Hz. The spinning satellites (T_spin~3s) are equipped with magnetorquers that permit spin-up/down and reorientation maneuvers. The spin axis is placed normal to the orbit plane, allowing full pitch-angle resolution twice per spin. An energetic particle detector for ions (EPDI) measures 250keV-5MeV ions, addressing secondary science. Funded initially by CalSpace and the University Nanosat Program, ELFIN was selected for flight with joint support from NSF and NASA between 2014 and 2018. △ Less

Submitted 16 June, 2020; v1 submitted 13 June, 2020; originally announced June 2020.

Comments: Submitted to Space Science Reviews April 2020. 51 pages, 7 tables, 21 figures

Structural-Functional Analysis of Engineered Protein-Nanoparticle Assemblies Using Graphene Microelectrodes

Authors: Jinglei Ping, Katherine W. Pulsipher, Ramya Vishnubhotla, Jose A. Villegas, Tacey L. Hicks, Stephanie Honig, Jeffery G. Saven, Ivan J. Dmochowski, A. T. Charlie Johnson

Abstract: The characterization of protein-nanoparticle assemblies in solution remains a challenge. We demonstrate a technique based on a graphene microelectrode for structural-functional analysis of model systems composed of nanoparticles enclosed in open-pore and closed-pore ferritin molecules. The method readily resolves the difference in accessibility of the enclosed nanoparticle for charge transfer and… ▽ More The characterization of protein-nanoparticle assemblies in solution remains a challenge. We demonstrate a technique based on a graphene microelectrode for structural-functional analysis of model systems composed of nanoparticles enclosed in open-pore and closed-pore ferritin molecules. The method readily resolves the difference in accessibility of the enclosed nanoparticle for charge transfer and offers the prospect for quantitative analysis of pore-mediated transport shed light on the spatial orientation of the protein subunits on the nanoparticle surface, faster and with higher sensitivity than conventional catalysis methods. △ Less

Submitted 29 August, 2017; originally announced August 2017.