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Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication
Authors:
Subhrajit Mukherjee,
Shuhua Wang,
Dasari Venkatakrishnarao,
Yaoju Tarn,
Teymour Talha-Dean,
Rainer Lee,
Ivan A. Verzhbitskiy,
Ding Huang,
Abhishek Mishra,
John Wellington John,
Sarthak Das,
Fabio Bussoloti,
Thathsara D. Maddumapatabandi,
Yee Wen Teh,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theo…
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Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theoretical phonon-limited intrinsic mobility. We achieve record carrier mobilities of 91 (132) cm2V-1s-1 for mono- (bi-) layer MoS2 transistors on SiO2 substrate. Statistics from over 60 devices confirm that oxygen-free fabrication enhances key figures of merit by more than an order of magnitude. While previous studies suggest that 2D transition metal dichalcogenides such as MoS2 and WS2 are stable in air, we show that short-term ambient exposure can degrade their device performance through irreversible oxygen chemisorption. This study emphasizes the criticality of avoiding oxygen exposure, offering guidance for device manufacturing for fundamental research and practical applications of 2D materials.
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Submitted 12 September, 2024;
originally announced September 2024.
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Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Authors:
Yiyu Zhang,
Dasari Venkatakrishnarao,
Michel Bosman,
Wei Fu,
Sarthak Das,
Fabio Bussolotti,
Rainer Lee,
Siew Lang Teo,
Ding Huang,
Ivan Verzhbitskiy,
Zhuojun Jiang,
Zhuoling Jiang,
Jian Wei Chai,
Shi Wun Tong,
Zi-En Ooi,
Calvin Pei Yu Wong,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,…
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Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics.
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Submitted 25 October, 2022;
originally announced October 2022.
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Mode-center Placement of Monolayer WS$_{2}$ in a Photonic Polymer Waveguide
Authors:
Angelina Frank,
Justin Zhou,
James A. Grieve,
Ivan Verzhbitskiy,
José Viana-Gomes,
Leyi Loh,
Michael Schmid,
Kenji Watanabe,
Takashi Taniguchi,
Goki Eda,
Alexander Ling
Abstract:
Effective integration of 2D materials such as monolayer transition metal dichalcogenides (TMDs) into photonic waveguides and integrated circuits is being intensely pursued due to the materials' strong exciton-based optical response. Here, we present a platform where a WS$_{2}$-hBN 2D heterostructure is directly integrated into the photonic mode-center of a novel polymer ridge waveguide. FDTD simul…
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Effective integration of 2D materials such as monolayer transition metal dichalcogenides (TMDs) into photonic waveguides and integrated circuits is being intensely pursued due to the materials' strong exciton-based optical response. Here, we present a platform where a WS$_{2}$-hBN 2D heterostructure is directly integrated into the photonic mode-center of a novel polymer ridge waveguide. FDTD simulations and collection of photoluminescence from the guided mode indicate that this system exhibits significantly improved waveguide-emitter coupling over a previous elastomer platform. This is facilitated by the platform's enhanced refractive-index contrast and a new method for mode-center integration of the coupled TMD. The integration is based on a simple dry-transfer process that is applicable to other 2D materials, and the platform's elastomeric nature is a natural fit to explore strain-tunable hybrid-photonic devices. The demonstrated ability of coupling photoluminescence to a polymer waveguide opens up new possibilities for hybrid-photonic systems in a variety of contexts.
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Submitted 23 July, 2021;
originally announced July 2021.
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Measuring valley polarization in two-dimensional materials with second-harmonic spectroscopy
Authors:
Yi Wei Ho,
Henrique Guimarães Rosa,
Ivan Verzhbitskiy,
Manuel Jose de Lima Ferreira Rodrigues,
Takashi Taniguchi,
Kenji Watanabe,
Goki Eda,
Vitor Manuel Pereira,
José Carlos Viana Gomes
Abstract:
A population imbalance at different valleys of an electronic system lowers its effective rotational symmetry. We introduce a technique to measure such imbalance - a valley polarization - that exploits the unique fingerprints of this symmetry reduction in the polarization-dependent second-harmonic generation (SHG). We present the principle and detection scheme in the context of hexagonal two-dimens…
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A population imbalance at different valleys of an electronic system lowers its effective rotational symmetry. We introduce a technique to measure such imbalance - a valley polarization - that exploits the unique fingerprints of this symmetry reduction in the polarization-dependent second-harmonic generation (SHG). We present the principle and detection scheme in the context of hexagonal two-dimensional crystals, which include graphene-based systems and the family of transition metal dichalcogenides, and provide a direct experimental demonstration using a 2H-MoSe$_{2}$ monolayer at room temperature. We deliberately use the simplest possible setup, where a single pulsed laser beam simultaneously controls the valley imbalance and tracks the SHG process. We further developed a model of the transient population dynamics which analytically describes the valley-induced SHG rotation in very good agreement with the experiment. In addition to providing the first experimental demonstration of the effect, this work establishes a conceptually simple, com-pact and transferable way of measuring instantaneous valley polarization, with direct applicability in the nascent field of valleytronics.
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Submitted 4 December, 2019; v1 submitted 4 March, 2019;
originally announced March 2019.
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Elastomeric waveguide on-chip coupling of an encapsulated MoS$_2$ monolayer
Authors:
Filip Auksztol,
Daniele Vella,
Ivan Verzhbitskiy,
Kian Fong Ng,
Yi Wei Ho,
James A Grieve,
José Viana-Gomes,
Goki Eda,
Alexander Ling
Abstract:
We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip. The structure is manufactured from PDMS using soft-lithography and capable of sustaining a single mode of guided light. We prove that this setup facilitates ad…
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We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip. The structure is manufactured from PDMS using soft-lithography and capable of sustaining a single mode of guided light. We prove that this setup facilitates addressing of the 2D material flake by pumping it with polarised laser light and gathering polarisation-resolved photoluminescence spectra with the extinction ratio of 31, which highlights the potential for selection-rule dependent measurements. Our results demonstrate improved handling of the material and experimental simplification compared to other techniques. Furthermore, inherent elasticity of the host provides an avenue for direct mechanical coupling to embedded materials.
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Submitted 2 March, 2019; v1 submitted 11 October, 2018;
originally announced October 2018.
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Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide
Authors:
Henrique G. Rosa,
Ho Yi Wei,
Ivan Verzhbitskiy,
Manuel J. F. L. Rodrigues,
Takashi Taniguchi,
Kenji Watanabe,
Goki Eda,
Vitor M. Pereira,
Jose C. V. Gomes
Abstract:
We report the first detailed characterization of the sheet third-harmonic optical susceptibility, $χ_{s}^{(3)}$, of tungsten diselenide (WSe$_{2}$). With a home-built confocal microscope setup developed to study harmonics generation, we map the second- and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single and few layers flakes of WSe…
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We report the first detailed characterization of the sheet third-harmonic optical susceptibility, $χ_{s}^{(3)}$, of tungsten diselenide (WSe$_{2}$). With a home-built confocal microscope setup developed to study harmonics generation, we map the second- and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single and few layers flakes of WSe$_{2}$. We register a value of $|χ_{s}^{(3)}| \approx$ 0.91 $\times$ 10$^{-28}$ m$^{3}$ V$^{-2}$ at a fundamental excitation frequency of $\hbarω$ = 0.8 eV, which is comparable in magnitude to the third-harmonic susceptibility of other group-VI transition metal dichalcogenides. The simultaneously recorded second-harmonic susceptibility is found to be $|χ_{s}^{(2)}| \approx$ 0.70 $\times$ 10$^{-19}$ m$^{2}$ V$^{-1}$ in very good agreement on the order of magnitude with recent reports for WSe$_{2}$, which asserts the robustness of our values for $|χ_{s}^{(3)}|$.
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Submitted 4 January, 2019; v1 submitted 5 March, 2018;
originally announced March 2018.
