Showing 1–13 of 13 results for author: Van Campenhout, J

Broadband and Ultra-Compact Adiabatic Coupler Based on Linearly Tapered Silicon Waveguides

Authors: Ahmed Bayoumi, Ahmed Khalil, Pol Van Dorpe, Maumita Chakrabarti, Dimitrios Velenis, Philippe Absil, Filippo Ferraro, Yoojin Ban, Joris Van Campenhout, Wim Bogaerts, Qingzhong Deng

Abstract: 2x2 couplers are crucial in many photonics applications but are often wavelength-sensitive. Alternative designs could be large, complex, or lossy. We present a broadband ultra-compact adiabatic coupler with minimal coupling variation and the least silicon taper length of 1.44 um, to our best knowledge. 2x2 couplers are crucial in many photonics applications but are often wavelength-sensitive. Alternative designs could be large, complex, or lossy. We present a broadband ultra-compact adiabatic coupler with minimal coupling variation and the least silicon taper length of 1.44 um, to our best knowledge. △ Less

Submitted 3 May, 2025; v1 submitted 29 April, 2025; originally announced April 2025.

A high-speed heterogeneous lithium tantalate silicon photonics platform

Authors: Margot Niels, Tom Vanackere, Ewoud Vissers, Tingting Zhai, Patrick Nenezic, Jakob Declercq, Cédric Bruynsteen, Shengpu Niu, Arno Moerman, Olivier Caytan, Nishant Singh, Sam Lemey, Xin Yin, Sofie Janssen, Peter Verheyen, Neha Singh, Dieter Bode, Martin Davi, Filippo Ferraro, Philippe Absil, Sadhishkumar Balakrishnan, Joris Van Campenhout, Günther Roelkens, Bart Kuyken, Maximilien Billet

Abstract: The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic components onto a single chip, enhancing the performance of optical transceivers. Here, silicon photonics, benefiting from mature fabrication processes, has gained prom… ▽ More The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic components onto a single chip, enhancing the performance of optical transceivers. Here, silicon photonics, benefiting from mature fabrication processes, has gained prominence. The platform combines modulators, switches, photodetectors and low-loss waveguides on a single chip. However, emerging standards like 1600ZR+ potentially exceed the capabilities of silicon-based modulators. To address these limitations, thin-film lithium niobate has been proposed as an alternative to silicon photonics, offering a low voltage-length product and exceptional high-speed modulation properties. More recently, the first demonstrations of thin-film lithium tantalate circuits have emerged, addressing some of the disadvantages of lithium niobate enabling a reduced bias drift and enhanced resistance to optical damage. As such, making it a promising candidate for next-generation photonic platforms. However, a persistent drawback of such platforms is the lithium contamination, which complicates integration with CMOS fabrication processes. Here, we present for the first time the integration of lithium tantalate onto a silicon photonics chip. This integration is achieved without modifying the standard silicon photonics process design kit. Our device achieves low half-wave voltage (3.5 V), low insertion loss (2.9 dB) and high-speed operation (> 70 GHz), paving the way for next-gen applications. By minimising lithium tantalate material use, our approach reduces costs while leveraging existing silicon photonics technology advancements, in particular supporting ultra-fast monolithic germanium photodetectors and established process design kits. △ Less

Submitted 14 March, 2025; v1 submitted 13 March, 2025; originally announced March 2025.

A scalable quadratic nonlinear silicon photonics platform with printable entangled photon-pair sources

Authors: Tom Vandekerckhove, Jasper De Witte, Lisa De Jaeger, Ewoud Vissers, Sofie Janssen, Peter Verheyen, Neha Singh, Dieter Bode, Martin Davi, Filippo Ferraro, Philippe Absil, Sadhishkumar Balakrishnan, Joris Van Campenhout, Dries Van Thourhout, Günther Roelkens, Stéphane Clemmen, Bart Kuyken

Abstract: The integration of second-order optical nonlinearities into scalable photonic platforms remains a key challenge due to their large sensitivity to fabrication variations. Here, we present a scalable quadratic nonlinear platform that harnesses the maturity and scalability of existing CMOS processes by heterogeneously integrating periodically poled lithium niobate (PPLN) onto a silicon photonics plat… ▽ More The integration of second-order optical nonlinearities into scalable photonic platforms remains a key challenge due to their large sensitivity to fabrication variations. Here, we present a scalable quadratic nonlinear platform that harnesses the maturity and scalability of existing CMOS processes by heterogeneously integrating periodically poled lithium niobate (PPLN) onto a silicon photonics platform. A generic PPLN design enables frequency conversion on two distinct waveguide geometries with efficiencies comparable to LNOI rib waveguides. We achieve reproducible phase-matching across the full radius of a commercial 200 mm silicon photonics wafer, leveraging superior CMOS fabrication tolerances. Furthermore, we introduce a tuning mechanism for both blue- and red-shifting of the operating wavelength, fully compensating fabrication-induced offsets. This enables deterministic phase-matching over an entire wafer and yields a strategy for wafer-scale phase-matched quadratic nonlinearities. Finally, we realize printable photon-pair sources via spontaneous parametric down-conversion, highlighting the platform's potential for large-scale quantum optical circuits. These results pave the way for wafer-scale integration of second-order optical nonlinearities in large photonic systems. △ Less

Submitted 11 March, 2025; originally announced March 2025.

Low-Loss Integration of High-Density Polymer Waveguides with Silicon Photonics for Co-Packaged Optics

Authors: Jef Van Asch, Jeroen Missinne, Junwen He, Arnita Podpod, Guy Lepage, Negin Golshani, Rafal Magdziak, Huseyin Sar, Hakim Kobbi, Swetanshu Bipul, Dieter Bode, Yoojin Ban, Filippo Ferraro, Joris Van Campenhout, Geert Van Steenberge

Abstract: Co-Packaged Optics applications require scalable and high-yield optical interfacing solutions to silicon photonic chiplets, offering low-loss, broadband, and polarization-independent optical coupling while maintaining compatibility with widely used approaches for electrical redistribution. We present two heterogeneous integration techniques that enable high-density electrical and optical I/O conne… ▽ More Co-Packaged Optics applications require scalable and high-yield optical interfacing solutions to silicon photonic chiplets, offering low-loss, broadband, and polarization-independent optical coupling while maintaining compatibility with widely used approaches for electrical redistribution. We present two heterogeneous integration techniques that enable high-density electrical and optical I/O connections, utilizing adiabatic coupling between on-chip silicon nitride (SiN) waveguides and package-level polymer optical waveguides. In the first approach, polymer waveguides are patterned using standard lithography directly on the surface of the photonic chip, ensuring compatibility with chip embedding as commonly employed in chip-first fanout wafer-level packaging. In the second approach, photonic chips are flip-chip bonded to the package substrate. Both techniques have been experimentally validated, achieving a coupling efficiency near 1 dB between SiN and polymer waveguides in O-band, for both TE and TM polarizations. SiN tapers were designed using the "Mono" method to optimize phase-matching conditions between the two waveguides, a critical requirement for integrating diverse optical components. These results demonstrate the potential of polymer waveguides in Co-Packaged Optics applications, achieving sub-2 dB chip-to-chip and chip-to-fiber coupling losses. △ Less

Submitted 4 March, 2025; originally announced March 2025.

Low-Loss and Low-Power Silicon Ring Based WDM 32$\times$100 GHz Filter Enabled by a Novel Bend Design

Authors: Qingzhong Deng, Ahmed H. El-Saeed, Alaa Elshazly, Guy Lepage, Chiara Marchese, Pieter Neutens, Hakim Kobbi, Rafal Magdziak, Jeroen De Coster, Javad Rahimi Vaskasi, Minkyu Kim, Yeyu Tong, Neha Singh, Marko Ersek Filipcic, Pol Van Dorpe, Kristof Croes, Maumita Chakrabarti, Dimitrios Velenis, Peter De Heyn, Peter Verheyen, Philippe Absil, Filippo Ferraro, Yoojin Ban, Joris Van Campenhout

Abstract: Ring resonators are crucial in silicon photonics for various applications, but conventional designs face performance trade-offs. Here a third-order polynomial interconnected circular (TOPIC) bend is proposed to revolutionize the ring designs fundamentally. The TOPIC bend has a unique feature of continuous curvature and curvature derivative, which is theoretically derived to be essential for wavegu… ▽ More Ring resonators are crucial in silicon photonics for various applications, but conventional designs face performance trade-offs. Here a third-order polynomial interconnected circular (TOPIC) bend is proposed to revolutionize the ring designs fundamentally. The TOPIC bend has a unique feature of continuous curvature and curvature derivative, which is theoretically derived to be essential for waveguide loss optimization. With the TOPIC bend, the silicon ring resonators demonstrated here have achieved three records to the best of our knowledge: the smallest radius (0.7 $\mathrm{μm}$) for silicon rings resonating with single guided mode, the lowest thermal tuning power (5.85 mW/$π$) for silicon rings with FSR $\geq$3.2 THz, and the first silicon ring-based WDM 32$\times$100 GHz filter. The filter has doubled the channel amount compared to the state of the art, and meanwhile achieved low insertion loss (1.91 $\pm$ 0.28 dB) and low tuning power (283 GHz/mW). Moreover, the TOPIC bend is not limited to ring applications, it can also be used to create bends with an arbitrary angle, with the advantages of ultra-compact radius and heater integration, which are expected to replace all circular bends in integrated photonics, greatly reducing system size and power consumption. △ Less

Submitted 22 November, 2024; originally announced November 2024.

Low-Loss Silicon Directional Coupler with Arbitrary Coupling Ratios for Broadband Wavelength Operation Based on Bent Waveguides

Authors: Ahmed H. El-Saeed, Alaa Elshazly, Hakim Kobbi, Rafal Magdziak, Guy Lepage, Chiara Marchese, Javad Rahimi Vaskasi, Swetanshu Bipul, Dieter Bode, Marko Ersek Filipcic, Dimitrios Velenis, Maumita Chakrabarti, Peter De Heyn, Peter Verheyen, Philippe Absil, Filippo Ferraro, Yoojin Ban, Joris Van Campenhout, Wim Bogaerts, Qingzhong Deng

Abstract: We demonstrate a design for a high-performance $2 \times 2$ splitter meeting the essential requirements of broadband coupling, support for arbitrary coupling ratio, ultra low-loss, high fabrication tolerance, and a compact footprint. This is achieved based on a rigorous coupled mode theory analysis of the broadband response of the bent directional coupler (DC) and by demonstrating a full couplin… ▽ More We demonstrate a design for a high-performance $2 \times 2$ splitter meeting the essential requirements of broadband coupling, support for arbitrary coupling ratio, ultra low-loss, high fabrication tolerance, and a compact footprint. This is achieved based on a rigorous coupled mode theory analysis of the broadband response of the bent directional coupler (DC) and by demonstrating a full coupling model, with measured broadband values of 0.4, 0.5, 0.6, and 0.7. As a benchmark, we demonstrate a 0.5:0.5 splitter that significantly reduces coupling variation from 0.391 in the traditional DC to just 0.051 over an 80 nm wavelength span. This represents a remarkable 7.67 times reduction in coupling variation. Further, newly-invented low-loss bends were used in the proposed design leading to an ultra low-loss design with negligible excess loss ($\mathrm{0.003 \pm 0.013 \ dB}$). The proposed 0.5:0.5 silicon strip waveguide-based design is tolerant and shows consistently low coupling variation over a full 300 mm wafer showcasing a maximum cross coupling variation of 0.112 over 80 nm wavelength range, at the extreme edge of the wafer. Futhermore, we augmented the wafer mapping with a waveguide width fabrication tolerance study, confirming the tolerance of the device with a mere 0.061 maximum coupling variation with a waveguide width deviation of $\pm 20$ nm over 80 nm wavelength range. These specs make the proposed splitter an attractive component for practical applications with mass production. △ Less

Submitted 9 April, 2024; originally announced April 2024.

32x100 GHz WDM filter based on ultra-compact silicon rings with a high thermal tuning efficiency of 5.85 mW/pi

Authors: Qingzhong Deng, Ahmed H. El-Saeed, Alaa Elshazly, Guy Lepage, Chiara Marchese, Hakim Kobbi, Rafal Magdziak, Jeroen De Coster, Neha Singh, Marko Ersek Filipcic, Kristof Croes, Dimitrios Velenis, Maumita Chakrabarti, Peter De Heyn, Peter Verheyen, Philippe Absil, Filippo Ferraro, Yoojin Ban, Joris Van Campenhout

Abstract: To the best of our knowledge, this paper has achieved the lowest thermal tuning power (5.85 mW/pi) for silicon rings with FSR>=3.2 THz, and the first silicon ring-based WDM-32x100 GHz filter. To the best of our knowledge, this paper has achieved the lowest thermal tuning power (5.85 mW/pi) for silicon rings with FSR>=3.2 THz, and the first silicon ring-based WDM-32x100 GHz filter. △ Less

Submitted 7 November, 2023; originally announced November 2023.

Comments: 3 pages submitted for conference

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Authors: Yannick De Koninck, Charles Caer, Didit Yudistira, Marina Baryshnikova, Huseyin Sar, Ping-Yi Hsieh, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci, Alexey Milenin, Andualem Ali Yimam, Geert Morthier, Dries Van Thourhout, Peter Verheyen, Marianna Pantouvaki, Bernardette Kunert, Joris Van Campenhout

Abstract: Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integratio… ▽ More Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trapping. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond. △ Less

Submitted 20 July, 2023; originally announced September 2023.

Comments: 40 pages with 16 figures. pdf includes supplementary information

Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform

Authors: Chenghan Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin, Kevin Vandersmissen, Arantxa Maestre, Alba Centeno, Amaia Zurutuza, Joris Van Campenhout, Cedric Huyghebaert, Dries Van Thourhout, Marianna Pantouvaki

Abstract: Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish th… ▽ More Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish their wafer-scale integration in a 300mm pilot CMOS foundry environment. A hardmask is used to shape graphene, while tungsten-based contacts are fabricated using the damascene approach to enable CMOS-compatible fabrication. By analyzing data from hundreds of devices per wafer, the impact of specific processing steps on the performance could be identified and optimized. After optimization, modulation depth of 50 $\pm$ 4 dB/mm is demonstrated on 400 devices measured using 6 V peak-to-peak voltage. The electro-optical bandwidth is up to 15.1 $\pm$ 1 1.8 GHz for 25$μ$m-long devices. The results achieved are comparable to lab-based record-setting graphene devices of similar design and CVD graphene quality. By demonstrating the reproducibility of the results across hundreds of devices, this work resolves the bottleneck of graphene wafer-scale integration. Furthermore, CMOS-compatible processing enables co-integration of graphene-based devices with other photonics and electronics building blocks on the same chip, and for high-volume low-cost manufacturing. △ Less

Submitted 28 March, 2023; originally announced April 2023.

Efficient resonance management in ultrahigh-Q one-dimensional photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform

Authors: Weiqiang Xie, Peter Verheyen, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout

Abstract: Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication… ▽ More Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication, and how to efficiently integrate them with other standard building blocks, available in exiting PIC platforms. In this work, we demonstrate ultrahigh-Q 1D PhC nanocavities fabricated on a 300 mm SOI wafer by optical lithography, with a record Q factor of up to 0.84 million. Moreover, we show efficient mode management in those oxide embedded cavities by coupling them with an access waveguide and realize two critical components: notch filters and narrow-band reflectors. In particular, they allow both single-wavelength and multi-wavelength operation, at the desired resonant wavelengths, while suppressing all other wavelengths over a broad wavelength range (>100 nm). Compared to traditional cavities, this offers a fantastic strategy for implementing resonances precisely in PIC designs with more freedom in terms of wavelength selectivity and the control of mode number. Given their compatibility with optical lithography and compact footprint, the realized 1D PhC nanocavities will be of profound significance for designing compact and novel resonance-based photonic components on large scale. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Optical Pre-Emphasis by Cascaded Graphene Electro Absorption Modulators

Authors: V. Sorianello, G. Contestabile, M. Midrio, M. Pantouvaki, I. Asselbergs, J. Van Campenhout, C. Huyghebaerts, M. Romagnoli

Abstract: A simple optical circuit made by a cascade of two graphene-on-silicon electro absorption modulators (EAMs) of different length is used for the optical pre-emphasis of 10 Gb/s non-return-to-zero (NRZ) signals by delay-inverse-weight compensation. Transmission up to 100 km on single mode fiber (SMF) without dispersion compensation is reported, showing also the large performance advantage (6 dB in ba… ▽ More A simple optical circuit made by a cascade of two graphene-on-silicon electro absorption modulators (EAMs) of different length is used for the optical pre-emphasis of 10 Gb/s non-return-to-zero (NRZ) signals by delay-inverse-weight compensation. Transmission up to 100 km on single mode fiber (SMF) without dispersion compensation is reported, showing also the large performance advantage (6 dB in back-to back and around 5 dB in transmission) in respect of the conventional single EAM transmitter configuration. △ Less

Submitted 28 February, 2020; originally announced March 2020.

Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon

Authors: Zhechao Wang, Bin Tian, Marianna Pantouvaki, Weiming Guo, Philippe Absil, Joris Van Campenhout, Clement Merckling, Dries Van Thourhout

Abstract: Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon… ▽ More Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with photonic circuits and III-V FINFET logic. △ Less

Submitted 13 January, 2015; originally announced January 2015.

An octave spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide

Authors: Bart Kuyken, Takuro Ideguchi, Simon Holzner, Ming Yan, Theodor W. Haensch, Joris Van Campenhout, Peter Verheyen, Stéphane Coen, Francois Leo, Roel Baets, Gunther Roelkens, Nathalie Picque

Abstract: We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pumping a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the ex… ▽ More We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pumping a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the experimental results are in agreement with numerical simulations. △ Less

Submitted 16 May, 2014; originally announced May 2014.