Showing 1–2 of 2 results for author: Ullberg, N

Ultra-low doping and local charge variation in graphene measured by Raman: experiment and simulation

Authors: Zhuofa Chen, Nathan Ullberg, Mounika Vutukuru, David Barton, Anna K Swan

Abstract: Avoiding charge density variations and impurities in graphene is vital for high-quality graphene-based devices. Here, we demonstrate an optical method using Raman 2D peak-split to monitor charge density variations in the range 1-25e10 cm-2. We compare Raman signatures with electrostatically gated Raman and transport measurements to correlate the 2D peak-split with the charge density on graphene wi… ▽ More Avoiding charge density variations and impurities in graphene is vital for high-quality graphene-based devices. Here, we demonstrate an optical method using Raman 2D peak-split to monitor charge density variations in the range 1-25e10 cm-2. We compare Raman signatures with electrostatically gated Raman and transport measurements to correlate the 2D peak-split with the charge density on graphene with high precision. We found that the Raman 2D peak-split and peak areas linearly varies with the charge density, where a lower charge density results in a larger 2D peak-split. We simulate Raman 2D spectra under various doping conditions to study the correlation between Raman 2D peak and charge puddles. These simulations give qualitative agreement with experimental results. Our work provides a simple and non-invasive optical method for estimating the doping level, local charge density variation and transport properties of graphene before fabricating graphene devices, with up to two orders of magnitude higher precision than previously reported optical methods. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Comments: 18 pages, 7 figures. arXiv admin note: text overlap with arXiv:1908.10961

MSC Class: No ACM Class: F.2.2

Monitoring the low doping regime in graphene using Raman 2D peak-splits: Comparison of gated Raman and transport measurements

Authors: Zhuofa Chen, Nathan Ullberg, Mounika Vutukuru, David Barton, Anna K Swan

Abstract: Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are labor-intensive and time-consuming. Existing optical methods using Raman spectroscopy only work for doping levels higher than ~10^12 cm^-2. Here, we propose an optical metho… ▽ More Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are labor-intensive and time-consuming. Existing optical methods using Raman spectroscopy only work for doping levels higher than ~10^12 cm^-2. Here, we propose an optical method using Raman 2D peak-splitting (split between the Raman 2D1 and 2D2 peaks at low doping levels). Electrostatically gated Raman measurements combined with transport measurements were used to correlate the 2D peak-split with the charge density on graphene with high precision (2x10^10 cm^-2 per 2D peak-split wavenumber). We found that the Raman 2D peak-split has a strong correlation with the charge density at low doping levels, and that a lower charge density results in a larger 2D peak-split. Our work provides a simple and non-invasive optical method to quantify the doping level of graphene from 10^10 cm^-2 to 10^12 cm^-2, two orders of magnitude higher precision than previously reported optical methods. This method provides a platform for estimating the doping level and quality of graphene before fabricating graphene devices △ Less

Submitted 28 August, 2019; originally announced August 2019.

Comments: 42pages, 5 figures