Showing 1–2 of 2 results for author: Tindall, C

Performance of the LBNL FastCCD for the European XFEL

Authors: Friederike Januschek, Ivana Klackova, Nord Andresen, Peter Denes, Steffen Hauf, John Joseph, Markus Kuster, Craig Tindall

Abstract: The European X-ray Free Electron Laser (XFEL.EU) is currently being commissioned in Schenefeld, Germany. From 2017 onwards it will provide spatially coherent X-rays of energies between 0.25\,keV and 25\,keV with a unique timing structure. One of the detectors foreseen at XFEL.EU for the soft X-ray regime (energies below 6\,keV) is a quasi column-parallel readout FastCCD developed by Lawrence Berke… ▽ More The European X-ray Free Electron Laser (XFEL.EU) is currently being commissioned in Schenefeld, Germany. From 2017 onwards it will provide spatially coherent X-rays of energies between 0.25\,keV and 25\,keV with a unique timing structure. One of the detectors foreseen at XFEL.EU for the soft X-ray regime (energies below 6\,keV) is a quasi column-parallel readout FastCCD developed by Lawrence Berkeley National Lab (LBNL) specifically for the XFEL.EU requirements. Its sensor has 1920$\times$960 pixels of 30\,$μ$m $\times$30\,$μ$m size with a beam hole in the middle of the sensor. The camera can be operated in full frame and frame store mode. With the FastCCD a frame rate of up to 120~fps can be achieved, but at XFEL.EU the camera settings are optimized for the 10\,Hz XFEL bunch-mode. The detector has been delivered to XFEL.EU. Results of the performance tests and calibration done using the XFEL.EU detector calibration infrastructure are presented quantifying noise level, gain and energy resolution. △ Less

Submitted 12 December, 2016; originally announced December 2016.

Comments: 3 pages, 5 figures, 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD, to be published in the conference record

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

Authors: Marco Battaglia, Dario Bisello, Richard Celestre, Devis Contarato, Peter Denes, Serena Mattiazzo, Craig Tindall

Abstract: This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source. This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source. △ Less

Submitted 9 November, 2011; originally announced November 2011.

Comments: 9 pages, 5 figures, submitted to Nuclear Instruments and Methods A