Proton irradiation on Hydrogenated Amorphous Silicon flexible devices
Authors:
M. Menichelli,
S. Aziz,
A. Bashiri,
M. Bizzarri,
C. Buti,
L. Calcagnile,
D. Calvo,
M. Caprai,
D. Caputo,
A. P. Caricato,
R. Catalano,
M. Cazzanelli,
R. Cirio,
G. A. P. Cirrone,
F. Cittadini,
T. Croci,
G. Cuttone,
G. de Cesare,
P. De Remigis,
S. Dunand,
M. Fabi,
L. Frontini,
C. Grimani,
M. Guarrera,
H. Hasnaoui
, et al. (36 additional authors not shown)
Abstract:
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick char…
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Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
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Submitted 17 December, 2024;
originally announced December 2024.
Characterization of hydrogenated amorphous silicon sensors on polyimide flexible substrate
Authors:
M. Menichelli,
L. Antognini,
S. Aziz,
A. Bashiri,
M. Bizzarri,
L. Calcagnile,
M. Caprai,
D. Caputo,
A. P. Caricato,
R. Catalano,
D. Chilà,
G. A. P. Cirrone,
T. Croci,
G. Cuttone,
G. De Cesare,
S. Dunand,
M. Fabi,
L. Frontini,
C. Grimani,
M. Ionica,
K. Kanxheri,
M. Large,
V. Liberali,
N. Lovecchio,
M. Martino
, et al. (28 additional authors not shown)
Abstract:
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiothe…
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Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events) and neutron flux measurements. In this paper we have studied the dosimetric x-ray response of n-i-p diodes deposited on Polyimide. We measured the linearity of the photocurrent response to x-rays versus dose-rate from which we have extracted the dosimetric x-ray sensitivity at various bias voltages. In particular low bias voltage operation has been studied to assess the high energy efficiency of these kind of sensor. A measurement of stability of x-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.
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Submitted 30 September, 2023;
originally announced October 2023.
