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On the crystalline environment of luminescent Tb$^{3+}$ ions embedded in indium tin oxide thin films: a DFT and Crystal field analysis assessment
Authors:
E. Serquen,
K. Lizárraga,
L. A. Enrique,
F. Bravo,
S. Mishra,
P. LLontop,
P. Venezuela,
L. R. Tessler,
J. A. Guerra
Abstract:
We assess the local symmetry and crystal environment of trivalent terbium ions embedded in an indium tin oxide (ITO) matrix with bixbyite structure. The \mbox{Tb$^{3+}$} ions tend to substitute \mbox{In$^{3+}$} ions in two different cationic sites ($b$ and $d$). Density Functional Theory (DFT) calculations suggest that the \mbox{Tb$^{3+}$} ions are mainly located at $C_2$ symmetry sites relaxing s…
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We assess the local symmetry and crystal environment of trivalent terbium ions embedded in an indium tin oxide (ITO) matrix with bixbyite structure. The \mbox{Tb$^{3+}$} ions tend to substitute \mbox{In$^{3+}$} ions in two different cationic sites ($b$ and $d$). Density Functional Theory (DFT) calculations suggest that the \mbox{Tb$^{3+}$} ions are mainly located at $C_2$ symmetry sites relaxing selection rules and enabling electric dipole transitions, with the $^5\text{D}_4\rightarrow\leftindex^7{\text{F}}_2$ transition being the most intense, providing a red color to the light emission. Photoluminescence emission spectra under UV excitation at \qty{83}{\kelvin} revealed 30 intra-4$f$ transitions, which were assigned to the $\leftindex^7{\text{F}}_J$ ground multiplet of the \mbox{Tb$^{3+}$} ion. Crystal-field analysis shows a strong alignment between calculated and observed energy levels, yielding a standard deviation of $σ=\qty{15.1}{\centi\per\metre}$. We believe these results can help to understand the activation mechanisms of \mbox{Tb$^{3+}$} luminescent centers in transparent conductive oxides, as well as the potential to modulate \mbox{Tb$^{3+}$} emission color through its crystalline environment.
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Submitted 12 February, 2025;
originally announced February 2025.
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Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm
Authors:
D. S. L. Figueira,
D. Mustafa,
L. R. Tessler,
N. C. Frateschi
Abstract:
We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited b…
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We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited by reactive RF co-sputtering. Secondly, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx<Er> matrix via a hard annealing at 1150 C. The SiO2 and the a-SiOx<Er> thicknesses were designed to support resonances near the pumping wavelength (~500nm), near the Si-NC emission (~800nm) and near the a-SiOx<Er> emission (~1550nm) enhancing the optical pumping process.
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Submitted 17 June, 2009;
originally announced June 2009.
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Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures
Authors:
D. S. L Figueira,
D. Mustafa,
L. R. Tessler,
N. C. Frateschi
Abstract:
Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be d…
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Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.
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Submitted 9 June, 2008;
originally announced June 2008.
