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Showing 1–4 of 4 results for author: Tessler, L

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  1. arXiv:2502.08517  [pdf, other

    cond-mat.mtrl-sci physics.app-ph

    On the crystalline environment of luminescent Tb$^{3+}$ ions embedded in indium tin oxide thin films: a DFT and Crystal field analysis assessment

    Authors: E. Serquen, K. Lizárraga, L. A. Enrique, F. Bravo, S. Mishra, P. LLontop, P. Venezuela, L. R. Tessler, J. A. Guerra

    Abstract: We assess the local symmetry and crystal environment of trivalent terbium ions embedded in an indium tin oxide (ITO) matrix with bixbyite structure. The \mbox{Tb$^{3+}$} ions tend to substitute \mbox{In$^{3+}$} ions in two different cationic sites ($b$ and $d$). Density Functional Theory (DFT) calculations suggest that the \mbox{Tb$^{3+}$} ions are mainly located at $C_2$ symmetry sites relaxing s… ▽ More

    Submitted 12 February, 2025; originally announced February 2025.

    Comments: 8 pages, 4figures

  2. arXiv:1709.08423  [pdf, ps, other

    quant-ph physics.atom-ph

    Remote quantum clock synchronization without synchronized clocks

    Authors: Ebubechukwu O. Ilo-Okeke, Louis Tessler, Jonathan P. Dowling, Tim Byrnes

    Abstract: A major outstanding problem for many quantum clock synchronization protocols is the hidden assumption of the availability of synchronized clocks within the protocol. In general, quantum operations between two parties do not have consistent phase definitions of quantum states, which introduce an unknown systematic phase error. We show that despite prior arguments to the contrary, it is possible to… ▽ More

    Submitted 25 September, 2017; originally announced September 2017.

  3. arXiv:0906.3274  [pdf

    physics.optics

    Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm

    Authors: D. S. L. Figueira, D. Mustafa, L. R. Tessler, N. C. Frateschi

    Abstract: We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited b… ▽ More

    Submitted 17 June, 2009; originally announced June 2009.

    Comments: 14 pages, 4 figures, in submission

  4. Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

    Authors: D. S. L Figueira, D. Mustafa, L. R. Tessler, N. C. Frateschi

    Abstract: Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be d… ▽ More

    Submitted 9 June, 2008; originally announced June 2008.

    Comments: 3 pages, 4 figures

    Journal ref: Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International, (IEEE cat. 07TH8919C, ISBN 1-4244-0661-7, Library of Congress 2006933012)