Spin dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields
Authors:
V. Laurindo Jr.,
E. D. Guarin Castro,
G. M. Jacobsen,
E. R. C. de Oliveira,
J. F. M. Domenegueti,
B. Alén,
Yu. I. Mazur,
G. J. Salamo,
G. E. Marques,
E. Marega Jr.,
M. D. Teodoro,
V. Lopez-Richard
Abstract:
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms.…
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This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms. Statistical fluctuations of the band-gap however become also relevant in this regime and we were able to deconvolute them from the decoherence contributions. The circularly polarized magneto-photoluminescence unveils a non-monotonic tuning of the coherence for one of the spin components at low magnetic fields. This effect has been ascribed to the competition between short-range interactions and spin-flip scattering, modulated by the momentum relaxation time.
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Submitted 4 January, 2022; v1 submitted 5 July, 2021;
originally announced July 2021.
Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes
Authors:
E. R. Cardozo de Oliveira,
A. Naranjo,
A. Pfenning,
V. Lopez-Richard,
G. E. Marques,
L. Worschech,
F. Hartmann,
S. Höfling,
M. D. Teodoro
Abstract:
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splittin…
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We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splitting is observed in the electroluminescence emission from the emitter prewell, enabling the determination of the charge carrier build-up. Our findings show that magneto-electroluminescence spectroscopy techniques provide useful insights on the charge carrier dynamics in resonant tunneling diodes and is a versatile tool to complement magneto-transport techniques. This approach will drive the way for developing potentially more efficient opto-electronic resonant tunneling devices, by e.g., monitoring voltage dependent charge accumulation for improving built-in fields and hence to maximize photodetector efficiency and/or minimize optical losses.
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Submitted 29 December, 2020; v1 submitted 22 July, 2020;
originally announced July 2020.
