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Safety-Oriented Calibration and Evaluation of the Intelligent Driver Model
Authors:
Kingsley Adjenughwure,
Arturo Tejada,
Pedro F. V. Oliveira,
Jeroen Hogema,
Gerdien Klunder
Abstract:
Many car-following models like the Intelligent Driver Model (IDM) incorporate important aspects of safety in their definitions, such as collision-free driving and keeping safe distances, implying that drivers are safety conscious when driving. Despite their safety-oriented nature, when calibrating and evaluating these models, the main objective of most studies is to find model parameters that mini…
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Many car-following models like the Intelligent Driver Model (IDM) incorporate important aspects of safety in their definitions, such as collision-free driving and keeping safe distances, implying that drivers are safety conscious when driving. Despite their safety-oriented nature, when calibrating and evaluating these models, the main objective of most studies is to find model parameters that minimize the error in observed measurements like spacing and speed while studies specifically focused on calibrating and evaluating unobserved safe behavior captured by the parameters of the model are scarce. Most studies on calibration and evaluation of the IDM do not check if the observed driving behavior (i.e. spacing) are within the model estimated unobserved safety thresholds (i.e. desired safety spacing) or what parameters are important for safety. This limits their application for safety driven traffic simulations. To fill this gap, this paper first proposes a simple metric to evaluate driver compliance with the safety thresholds of the IDM model. Specifically, we evaluate driver compliance to their desired safety spacing, speed and safe time gap. Next, a method to enforce compliance to the safety threshold during model calibration is proposed. The proposed compliance metric and the calibration approach is tested using Dutch highway trajectory data obtained from a driving simulator experiment and two drones. The results show that compliance to the IDM safety threshold greatly depends on braking capability with a median compliance between 38% and 90% of driving time, indicating that drivers can only partially follow the IDM safety threshold in reality.
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Submitted 19 July, 2024; v1 submitted 6 October, 2023;
originally announced October 2023.
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Description of Excitonic Absorption Using the Sommerfeld Enhancement Factor and Band-Fluctuations
Authors:
K. Lizárraga,
P. Llontop,
L. A. Enrique-Morán,
M. Piñeiro,
E. Perez,
E. Serquen,
A. Tejada,
F. Ruske,
L. Korte,
J. A. Guerra
Abstract:
One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the Elliott model and its several modifications such as non-parabolic bands, magnetic pote…
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One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the Elliott model and its several modifications such as non-parabolic bands, magnetic potentials and electro-hole-polaron interactions. However, exciton binding energies obtained from measured data often vary strongly depending on the chosen model. Here, we propose an alternative and rather simple approach, which has previously been successful in the determination of the optical bandgap of amorphous, direct and indirect semiconductors, based on the bands-fluctuations (BF) model. In this model, the fluctuations due to disorder, temperature or lattice vibrations give rise to the well known exponential distribution of band tail states (Urbach tails). This analysis results in an analytic equation with 5 parameters only. The binding energies and optical bandgaps of GaAs and the family of tri-halide perovskites ($\textrm{MAPbX}_{3}$), $\textrm{X=Br,I,Cl}$, over a wide range of temperatures, are obtained with this model. The results for the bandgap, linewidth and exciton binding energy are in good agreement with previous reports. Moreover, due to the polar nature of perovskites, the obtained binding energies can be compared with the ones computed with a theoretical model for polar materials via a model proposed by Kane et al. In this model, the exciton is surrounded by a cloud of virtual phonons interacting via the Fr$\ddot{\textrm{o}}$lich interaction. As a consequence, the upper bound for the binding energy of the exciton-polaron system is calculated. Coincidentally, these results are in good agreement with the optical constants obtained with the EBF model.
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Submitted 29 June, 2023;
originally announced June 2023.
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New Optical Models for the Accurate Description of the Electrical Permittivity in Direct and Indirect Semiconductors
Authors:
K. Lizárraga,
L. A. Enrique-Morán,
A. Tejada,
M. Piñeiro,
P. Llontop,
E. Serquen,
E. Perez,
L. Korte,
J. A. Guerra
Abstract:
We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the Tauc-Lorentz model and the band-fluctuations approach to derive a 5-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect…
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We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the Tauc-Lorentz model and the band-fluctuations approach to derive a 5-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect semiconductors. Main features of the models are the self-consistent generation of the exponential Urbach tail below the bandgap and the incorporation of the Lorentz oscillator behaviour due to electronic transitions above the fundamental region. We apply and test our models on optical data of direct (MAPbI$_{3}$, GaAs and InP), indirect (GaP and c-Si), and amorphous (a-Si) semiconductors, accurately describing the spectra of the imaginary part of the electrical permittivity. Lastly, we compare our models with other similarly inspired models to assess the optical bandgap, Urbach tail and oscillator central resonance energy.
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Submitted 7 December, 2022;
originally announced December 2022.
