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On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
Authors:
Jules Duraz,
Hassen Souissi,
Maksym Gromovyi,
David Troadec,
Teo Baptiste,
Nathaniel Findling,
Phuong Vuong,
Rajat Gujrati,
Thi May Tran,
Jean Paul Salvestrini,
Maria Tchernycheva,
Suresh Sundaram,
Abdallah Ougazzaden,
Gilles Patriarche,
Sophie Bouchoule
Abstract:
The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide…
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The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide (NiOx) is accompanied by Au diffusion down to the GaN surface, and by Ga out-diffusion through the GaN/metal interface. Electrical characterizations of the contact by Transmission Line Method (TLM) show that an ohmic contact is obtained as soon as a thin, Au-Ga interfacial layer is formed, even after complete diffusion of Ni or NiOx to the top surface of the contact. Our results clarify that the presence of Ni or NiOx at the interface is not the main origin of the ohmic-like behavior in such contacts. Auto-cleaning of the interface during the interdiffusion process may play a role, but TEM-EDX analysis evidences that the creation of Ga vacancies associated to the formation of a Ga-Au interfacial layer is crucial for reducing the Schottky barrier height, and maximizing the amount of current flowing through the contact.
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Submitted 10 February, 2025; v1 submitted 16 December, 2024;
originally announced December 2024.
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Lasing of Quantum-Dot Micropillar Lasers under Elevated Temperatures
Authors:
Andrey Babichev,
Ivan Makhov,
Natalia Kryzhanovskaya,
Alexey Blokhin,
Yuriy Zadiranov,
Yulia Salii,
Marina Kulagina,
Mikhail Bobrov,
Alexey Vasiliev,
Sergey Blokhin,
Nikolay Maleev,
Maria Tchernycheva,
Leonid Karachinsky,
Innokenty Novikov,
Anton Egorov
Abstract:
A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $μ$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $μ$W for 5 $μ$m pillar) coincided with a temperature of 130…
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A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $μ$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $μ$W for 5 $μ$m pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.
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Submitted 23 July, 2024;
originally announced July 2024.
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
Authors:
Patrick Quach,
Arnaud Jollivet,
Andrey Babichev,
Nathalie Isac,
Martina Morassi,
Aristide Lemaitre,
Pavel Yunin,
Eric Frayssinet,
Philippe de Mierry,
Mathieu Jeannin,
Adel Bousseksou,
Raffaele Colombelli,
Maria Tchernycheva,
Yvon Cordier,
François Julien
Abstract:
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride…
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We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.
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Submitted 14 April, 2022;
originally announced April 2022.
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Modified silicone rubbers for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with single-walled carbon nanotube transparent contact
Authors:
Vladimir Neplokh,
Fedor M. Kochetkov,
Konstantin V. Deriabin,
Vladimir V. Fedorov,
Alexey D. Bolshakov,
Igor E. Eliseev,
Vladimir Yu. Mikhailovskii,
Daniil A. Ilatovskii,
Dmitry V. Krasnikov,
Maria Tchernycheva,
George E. Cirlin,
Albert G. Nasibulin,
Ivan S. Mukhin,
Regina M. Islamova
Abstract:
This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes…
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This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes were contacted with different materials including single-walled carbon nanotubes or ferrocenyl-containing polymethylhydrosiloxane with and without multi-walled carbon nanotubes doping. The electrical connection of the fabricated membranes was verified by electron beam induced current (EBIC) spectroscopy. The developed methods and materials can be applied for fabrication of high quality flexible inorganic optoelectronic devices.
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Submitted 29 October, 2019;
originally announced October 2019.
