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X-ray response evaluation in subpixel level for X-ray SOI pixel detectors
Authors:
Kousuke Negishi,
Takayoshi Kohmura,
Kouichi Hagino,
Taku Kogiso,
Kenji Oono,
Keigo Yarita,
Akinori Sasaki,
Koki Tamasawa,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hideaki Matsumura,
Katsuhiro Tachibana,
Hideki Hayashi,
Sodai Harada,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Toshinobu Miyoshi,
Shunji Kishimoto,
Ikuo Kurachi
Abstract:
We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce e…
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We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce electric noises. The good time resolution enables the XRPIX to reduce Non X-ray Background in the high energy band above 10\,keV drastically by using anti-coincidence technique with active shield counters surrounding XRPIX. In order to increase the soft X-ray sensitivity, it is necessary to make the dead layer on the X-ray incident surface as thin as possible. Since XRPIX1b, which is a device at the initial stage of development, is a front-illuminated (FI) type of XRPIX, low energy X-ray photons are absorbed in the 8 $\rm μ$m thick circuit layer, lowering the sensitivity in the soft X-ray band. Therefore, we developed a back-illuminated (BI) device XRPIX2b, and confirmed high detection efficiency down to 2.6 keV, below which the efficiency is affected by the readout noise. In order to further improve the detection efficiency in the soft X-ray band, we developed a back-illuminated device XRPIX3b with lower readout noise. In this work, we irradiated 2--5 keV X-ray beam collimated to 4 $\rm μm φ$ to the sensor layer side of the XRPIX3b at 6 $\rm μm$ pitch. In this paper, we reported the uniformity of the relative detection efficiency, gain and energy resolution in the subpixel level for the first time. We also confirmed that the variation in the relative detection efficiency at the subpixel level reported by Matsumura et al. has improved.
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Submitted 25 October, 2018;
originally announced October 2018.
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Proton Radiation Damage Experiment for X-Ray SOI Pixel Detectors
Authors:
Keigo Yarita,
Takayoshi Kohmura,
Kouichi Hagino,
Taku Kogiso,
Kenji Oono,
Kousuke Negishi,
Koki Tamasawa,
Akinori Sasaki,
Satoshi Yoshiki,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hideaki Matsumura,
Katsuhiro Tachibana,
Hideki Hayashi,
Sodai Harada,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Toshinobu Miyoshi,
Ikuo Kurachi,
Tsuyoshi Hamano
, et al. (1 additional authors not shown)
Abstract:
In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors…
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In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on silicon-on-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution.
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Submitted 22 October, 2018;
originally announced October 2018.
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Investigation of the Kyoto's X-ray Astronomical SOIPIXs with Double-SOI Wafer for Reduction of Cross-talks
Authors:
Shunichi Ohmura,
Takeshi Go Tsuru,
Takaaki Tanaka,
Ayaki Takeda,
Hideaki Matsumura,
Ito Makoto,
Shinya Nakashima,
Yasuo Arai,
Koji Mori,
Ryota Takenaka,
Yusuke Nishioka,
Takayoshi Kohmura,
Kouki Tamasawa
Abstract:
We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readou…
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We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readout mode, in which all the pixels are read out serially. Previous studies have clarified that the problem is caused by the cross-talks between buried P-wells (BPW) in the sensor layer and in-pixel circuits in the circuit layer. Thus, we developed new XRPIX having a Double SOI wafer (DSOI), which has an additional silicon layer (middle silicon) working as an electrical shield between the BPW and the in-pixel circuits. After adjusting the voltage applied to the middle silicon, we confirmed the reduction of the cross-talk by observing the analog waveform of the pixel circuit. We also successfully detected $^{241}$Am X-rays with XRPIX.
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Submitted 21 August, 2015;
originally announced August 2015.
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Study of the basic performance of the XRPIX for the future astronomical X-ray satellite
Authors:
Koki Tamasawa,
Takayoshi Kohmura,
Takahiro Konno,
Takeshi Go Tsuru,
Takaaki Tanaka,
Ayaki Takeda,
Hideaki Matsumura,
Koji Mori,
Yusuke Nishioka,
Ryota Takenaka
Abstract:
We have developed CMOS imaging sensor (XRPIX) using SOI (Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-Ray soiPIXel) has advantage of a high time resolution, a high position resolution and an observation in a wide X-ray energy band with a thick depletion layer of over 200um.
However, the energy resolution of XRPIX is not as good as one of X-ray CCD. Therefore improveme…
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We have developed CMOS imaging sensor (XRPIX) using SOI (Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-Ray soiPIXel) has advantage of a high time resolution, a high position resolution and an observation in a wide X-ray energy band with a thick depletion layer of over 200um.
However, the energy resolution of XRPIX is not as good as one of X-ray CCD. Therefore improvement of the the energy resolution is one of the most important development item of XRPIX. In order to evaluate the performance XRPIX more precisely, we have investigated on the temperature dependence of the basic performance, such as readout noise, leak current, gain and energy resolution, using two type of XRPIX, XRPIX1 and XRPIX2b_CZ.
In our study, we confirmed the readout noise, the leak current noise and the energy resolution clearly depended on the operating temperature of XRPIX. In addition, we divided the readout noise into the leak current noise and the circuit origin noise. As a result, we found that noise of the electronic circuitry origin was proportional to the square root of operating temperature.
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Submitted 24 July, 2015;
originally announced July 2015.
