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Selecting Alternative Metals for Advanced Interconnects
Authors:
Jean-Philippe Soulié,
Kiroubanand Sankaran,
Benoit Van Troeye,
Alicja Leśniewska,
Olalla Varela Pedreira,
Herman Oprins,
Gilles Delie,
Claudia Fleischmann,
Lizzie Boakes,
Cédric Rolin,
Lars-Åke Ragnarsson,
Kristof Croes,
Seongho Park,
Johan Swerts,
Geoffrey Pourtois,
Zsolt Tőkei,
Christoph Adelmann
Abstract:
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions…
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Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturization. The associated scaling challenges for interconnects are expected to further intensify in future CMOS technology nodes. As interconnect dimensions approach the 10 nm scale, the limitations of conventional Cu dual-damascene metallization are becoming increasingly difficult to overcome, spurring over a decade of focused research into alternative metallization schemes. The selection of alternative metals is a highly complex process, requiring consideration of multiple criteria, including resistivity at reduced dimensions, reliability, thermal performance, process technology readiness, and sustainability. This tutorial introduces the fundamental criteria for benchmarking and selecting alternative metals and reviews the current state of the art in this field. It covers materials nearing adoption in high-volume manufacturing, materials currently under active research, and potential future directions for fundamental study. While early alternatives to Cu metallization have recently been introduced in commercial CMOS devices, the search for the optimal interconnect metal remains ongoing.
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Submitted 1 October, 2024; v1 submitted 13 June, 2024;
originally announced June 2024.
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Scaling NbTiN-based ac-powered Josephson digital to 400M devices/cm$^2$
Authors:
Anna Herr,
Quentin Herr,
Steve Brebels,
Min-Soo Kim,
Ankit Pokhrel,
Blake Hodges,
Trent Josephsen,
Sabine ONeal,
Ruiheng Bai,
Katja Nowack,
Anne-Marie Valente-Feliciano,
Zsolt Tökei
Abstract:
We describe a fabrication stackup for digital logic with 16 superconducting NbTiN layers, self-shunted a-silicon barrier Josephson Junctions (JJs), and low loss, high-$κ$ tunable HZO capacitors. The stack enables 400 MJJ/cm$^2$ device density, efficient routing, and AC power distribution on a resonant network. The materials scale beyond 28nm lithography and are compatible with standard high-temper…
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We describe a fabrication stackup for digital logic with 16 superconducting NbTiN layers, self-shunted a-silicon barrier Josephson Junctions (JJs), and low loss, high-$κ$ tunable HZO capacitors. The stack enables 400 MJJ/cm$^2$ device density, efficient routing, and AC power distribution on a resonant network. The materials scale beyond 28nm lithography and are compatible with standard high-temperature CMOS processes. We report initial results for two-metal layer NbTiN wires with 50nm critical dimension. A semi-ascendance wire-and-via process module using 193i lithography and 50nm critical dimension has shown cross-section uniformity of 1%=1s across the 300mm wafer, critical temperature of 12.5K, and critical current of 0.1mA at 4.2K. We also present a new design of the resonant AC power network enabled by NbTiN wires and HZO MIM capacitors. The design matches the device density and provides a 30 GHz clock with estimated efficiency of up to 90%. Finally, magnetic imaging of patterned NbTiN ground planes shows low intrinsic defectivity and consistent trapping of vorteces in 0.5 mm holes spaced on a 20 $μ$m x 20 $μ$m grid.
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Submitted 29 April, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
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Comprehensive Modeling of Graphene Resistivity
Authors:
Antonino Contino,
Ivan Ciofi,
Xiangyu Wu,
Inge Asselberghs,
Christopher J. Wilson,
Zsolt Tokei,
Guido Groeseneken,
Bart Soree
Abstract:
Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several discrepancies can be found, as well as a number of inconsistencies between formulas. In this paper, we revise the main scattering mechanisms in graphene, based…
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Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several discrepancies can be found, as well as a number of inconsistencies between formulas. In this paper, we revise the main scattering mechanisms in graphene, based on theory and goodness of fit to in-house experimental data. In particular, a step-by-step evaluation of the interaction between electrons and optical phonons is carried out, where we demonstrate that the process of optical phonon emission scattering is completely suppressed for all low-field applications and all temperatures in the range of interest, as opposed to what is often reported in literature. Finally, we identify the best scattering models based on the goodness of fit to experimental data.
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Submitted 1 December, 2017;
originally announced December 2017.
