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Nonlinear optical pumping to a diamond NV center dark state
Authors:
Prasoon K. Shandilya,
Vinaya K. Kavatamane,
Sigurd Flågan,
David P. Lake,
Denis Sukachev,
Paul E. Barclay
Abstract:
The photodynamics of diamond nitrogen-vacancy (NV) centers limits their performance in many quantum technologies. Quenching of photoluminescence, which degrades NV readout, is commonly ascribed to a dark state that is not fully understood. Using a nanoscale cavity to generate intense infrared fields that quench NV emission nonlinearly with field intensity, we show that the dark state is accessed b…
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The photodynamics of diamond nitrogen-vacancy (NV) centers limits their performance in many quantum technologies. Quenching of photoluminescence, which degrades NV readout, is commonly ascribed to a dark state that is not fully understood. Using a nanoscale cavity to generate intense infrared fields that quench NV emission nonlinearly with field intensity, we show that the dark state is accessed by two-photon pumping into the $^4A_2$ quartet state of the neutrally charged NV (NV$^0$). We constrain this state's energy relative to the NV$^0$ ground-state ($^2E$) to $>0.58$\,eV and the recombination energy threshold to the NV$^-$ ground state ($^3A_2$) to $<2.01$ eV. Furthermore, we show that accessing this state allows sensing of local infrared fields. This new understanding will allow predictions of the limits of NV technologies reliant upon intense fields, including levitated systems, spin--optomechanical devices, and absorption--based magnetometers.
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Submitted 15 November, 2024;
originally announced November 2024.
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Electrical Manipulation of Telecom Color Centers in Silicon
Authors:
Aaron M. Day,
Madison Sutula,
Jonathan R. Dietz,
Alexander Raun,
Denis D. Sukachev,
Mihir K. Bhaskar,
Evelyn L. Hu
Abstract:
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble opti…
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Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.
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Submitted 14 November, 2023;
originally announced November 2023.
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Development of a Boston-area 50-km fiber quantum network testbed
Authors:
Eric Bersin,
Matthew Grein,
Madison Sutula,
Ryan Murphy,
Yan Qi Huan,
Mark Stevens,
Aziza Suleymanzade,
Catherine Lee,
Ralf Riedinger,
David J. Starling,
Pieter-Jan Stas,
Can M. Knaut,
Neil Sinclair,
Daniel R. Assumpcao,
Yan-Cheng Wei,
Erik N. Knall,
Bartholomeus Machielse,
Denis D. Sukachev,
David S. Levonian,
Mihir K. Bhaskar,
Marko Lončar,
Scott Hamilton,
Mikhail Lukin,
Dirk Englund,
P. Benjamin Dixon
Abstract:
Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Bo…
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Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring the time-of-flight, polarization, and phase noise imparted on transmitted signals. We further design and demonstrate a compensation system that is both resilient to these noise sources and compatible with integration of emerging quantum memory components on the deployed link. These results have utility for future work on the BARQNET as well as other quantum network testbeds in development, enabling near-term quantum networking demonstrations and informing what areas of technology development will be most impactful in advancing future system capabilities.
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Submitted 5 January, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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Telecom networking with a diamond quantum memory
Authors:
Eric Bersin,
Madison Sutula,
Yan Qi Huan,
Aziza Suleymanzade,
Daniel R. Assumpcao,
Yan-Cheng Wei,
Pieter-Jan Stas,
Can M. Knaut,
Erik N. Knall,
Carsten Langrock,
Neil Sinclair,
Ryan Murphy,
Ralf Riedinger,
Matthew Yeh,
C. J. Xin,
Saumil Bandyopadhyay,
Denis D. Sukachev,
Bartholomeus Machielse,
David S. Levonian,
Mihir K. Bhaskar,
Scott Hamilton,
Hongkun Park,
Marko Lončar,
Martin M. Fejer,
P. Benjamin Dixon
, et al. (2 additional authors not shown)
Abstract:
Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy…
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Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy (SiV) center in diamond to the telecom O-band, maintaining low noise ($g^2(0)<0.1$) and high indistinguishability ($V=89\pm8\%$). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50 km deployed fiber link, to the visible band and mapping their quantum states onto a diamond quantum memory with fidelity $\mathcal{F}=87\pm 2.5 \% $. These results demonstrate the viability of SiV quantum memories integrated with telecom-band systems for scalable quantum networking applications.
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Submitted 17 July, 2023;
originally announced July 2023.
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Cryogenic packaging of nanophotonic devices with a low coupling loss < 1 dB
Authors:
Beibei Zeng,
Chawina De-Eknamkul,
Daniel Assumpcao,
Dylan Renaud,
Zhuoxian Wang,
Daniel Riedel,
Jeonghoon Ha,
Carsten Robens,
David Levonian,
Mikhail Lukin,
Ralf Riedinger,
Mihir Bhaskar,
Denis Sukachev,
Marko Loncar,
Bart Machielse
Abstract:
Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with s…
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Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically-compatible coupling with sub-dB losses from optical fibers to nanophotonic circuits. Here we report a technique for reproducibly generating a permanently packaged interface between a tapered optical fiber and nanophotonic devices with a record-low coupling loss < 1 dB per facet at near-infrared wavelengths (~730 nm) that remains stable from 300 K to 30 mK. We further demonstrate the compatibility of this technique with etched lithium niobate on insulator waveguides. The technique lifts performance limitations imposed by scattering as light transfers between photonic devices and optical fibers, paving the way for scalable integration of photonic technologies at both room and cryogenic temperatures.
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Submitted 10 August, 2023; v1 submitted 16 June, 2023;
originally announced June 2023.
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Demonstration of hybrid high-Q hexagonal boron nitride microresonators
Authors:
Anustup Das,
Dong Jun Lee,
Prasoon K. Shandilya,
Sejeong Kim,
Gumin Kang,
David P. Lake,
Bishnupada Behera,
Denis Sukachev,
Igor Aharonovich,
Jung-Hyun Lee,
Jaehyun Park,
Paul E. Barclay
Abstract:
Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that is emerging as a powerful platform for quantum optics and nanophotonics. In this work, we demonstrate whispering gallery mode silica microresonators hybridized with thin layers of epitaxially grown hBN that exhibit high optical quality factor $> 7 \times 10^5$. Measurements of the effect of hBN thickness on optical $Q$ a…
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Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that is emerging as a powerful platform for quantum optics and nanophotonics. In this work, we demonstrate whispering gallery mode silica microresonators hybridized with thin layers of epitaxially grown hBN that exhibit high optical quality factor $> 7 \times 10^5$. Measurements of the effect of hBN thickness on optical $Q$ and comparison with a theoretical model allows the linear optical absorption coefficient of the hBN films to be estimated. These high-$Q$ devices will be useful for applications in quantum and nonlinear optics, and their hybridized geometry provides a sensitive platform for evaluating losses in hBN and other 2D materials.
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Submitted 8 July, 2021;
originally announced July 2021.
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Optomechanical interface between telecom photons and spin quantum memory
Authors:
Prasoon K Shandilya,
David P Lake,
Matthew J Mitchell,
Denis D Sukachev,
Paul E Barclay
Abstract:
Quantum networks enable a broad range of practical and fundamental applications spanning distributed quantum computing to sensing and metrology. A cornerstone of such networks is an interface between telecom photons and quantum memories. Here we demonstrate a novel approach based on cavity optomechanics that utilizes the susceptibility of spin qubits to strain. We use it to control electron spins…
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Quantum networks enable a broad range of practical and fundamental applications spanning distributed quantum computing to sensing and metrology. A cornerstone of such networks is an interface between telecom photons and quantum memories. Here we demonstrate a novel approach based on cavity optomechanics that utilizes the susceptibility of spin qubits to strain. We use it to control electron spins of nitrogen-vacancy centers in diamond with photons in the 1550 nm telecommunications wavelength band. This method does not involve qubit optical transitions and is insensitive to spectral diffusion. Furthermore, our approach can be applied to solid-state qubits in a wide variety of materials, expanding the toolbox for quantum information processing.
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Submitted 11 June, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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Processing light with an optically tunable mechanical memory
Authors:
David P. Lake,
Matthew Mitchell,
Denis D. Sukachev,
Paul E. Barclay
Abstract:
Mechanical systems are one of the promising platforms for classical and quantum information processing and are already widely-used in electronics and photonics. Cavity optomechanics offers many new possibilities for information processing using mechanical degrees of freedom; one of them is storing optical signals in long-lived mechanical vibrations by means of optomechanically induced transparency…
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Mechanical systems are one of the promising platforms for classical and quantum information processing and are already widely-used in electronics and photonics. Cavity optomechanics offers many new possibilities for information processing using mechanical degrees of freedom; one of them is storing optical signals in long-lived mechanical vibrations by means of optomechanically induced transparency. However, the memory storage time is limited by intrinsic mechanical dissipation. More over, in-situ control and manipulation of the stored signals--processing--has not been demonstrated. Here, we address both of these limitations using a multi-mode cavity optomechanical memory. An additional optical field coupled to the memory modifies its dynamics through time-varying parametric feedback. We demonstrate that this can extend the memory decay time by an order of magnitude, decrease its effective mechanical dissipation rate by two orders of magnitude, and deterministically shift the phase of a stored field by over 2$π$. This further expands the information processing toolkit provided by cavity optomechanics.
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Submitted 3 December, 2020; v1 submitted 12 December, 2019;
originally announced December 2019.
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Quantum interference of electromechanically stabilized emitters in nanophotonic devices
Authors:
Bartholomeus Machielse,
Stefan Bogdanovic,
Srujan Meesala,
Scarlett Gauthier,
Michael J. Burek,
Graham Joe,
Michelle Chalupnik,
Young-Ik Sohn,
Jeffrey Holzgrafe,
Ruffin E. Evans,
Cleaven Chia,
Haig Atikian,
Mihir K. Bhaskar,
Denis D. Sukachev,
Linbo Shao,
Smarak Maity,
Mikhail D. Lukin,
Marko Lončar
Abstract:
Photon-mediated coupling between distant matter qubits may enable secure communication over long distances, the implementation of distributed quantum computing schemes, and the exploration of new regimes of many-body quantum dynamics. Nanophotonic devices coupled to solid-state quantum emitters represent a promising approach towards realization of these goals, as they combine strong light-matter i…
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Photon-mediated coupling between distant matter qubits may enable secure communication over long distances, the implementation of distributed quantum computing schemes, and the exploration of new regimes of many-body quantum dynamics. Nanophotonic devices coupled to solid-state quantum emitters represent a promising approach towards realization of these goals, as they combine strong light-matter interaction and high photon collection efficiencies. However, the scalability of these approaches is limited by the frequency mismatch between solid-state emitters and the instability of their optical transitions. Here we present a nano-electromechanical platform for stabilization and tuning of optical transitions of silicon-vacancy (SiV) color centers in diamond nanophotonic devices by dynamically controlling their strain environments. This strain-based tuning scheme has sufficient range and bandwidth to alleviate the spectral mismatch between individual SiV centers. Using strain, we ensure overlap between color center optical transitions and observe an entangled superradiant state by measuring correlations of photons collected from the diamond waveguide. This platform for tuning spectrally stable color centers in nanophotonic waveguides and resonators constitutes an important step towards a scalable quantum network.
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Submitted 22 February, 2019; v1 submitted 25 January, 2019;
originally announced January 2019.
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Inner-shell clock transition in atomic thulium with small BBR shift
Authors:
A. Golovisin,
E. Fedorova,
D. Tregubov,
D. Sukachev,
K. Khabarova,
V. Sorokin,
N. Kolachevsky
Abstract:
With direct polarizability measurements we demonstrated extremely low sensitivity of the inner-shell clock transition at $1.14\,μ$m in Tm atoms to external dc electric fields and black-body radiation (BBR). We measured differential polarizabilities of clock levels in Tm at wavelengths of 810--860\,nm and at 1064\,nm and inferred the static scalar differential polarizability of the inner-shell cloc…
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With direct polarizability measurements we demonstrated extremely low sensitivity of the inner-shell clock transition at $1.14\,μ$m in Tm atoms to external dc electric fields and black-body radiation (BBR). We measured differential polarizabilities of clock levels in Tm at wavelengths of 810--860\,nm and at 1064\,nm and inferred the static scalar differential polarizability of the inner-shell clock transition of $-0.047(18)$ atomic units corresponding to only $2\times10^{-18}$ fractional frequency shift from BBR at the room temperature. This is a few orders of magnitude smaller compared to the BBR shift of the clock transitions in the neutral atoms (Sr, Yb, Hg) and competes with the least sensitive ion species (e.g. Al$^+$ or Lu$^+$). For the $1.14\,μ$m clock transition, we experimentally determined the "magic" wavelength of $813.320(6)$\,nm, recorded the transition spectral linewidth of $10$\,Hz, and measured its absolute frequency of $262\,954\,938\,269\,213(30)$\,Hz.
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Submitted 26 September, 2018; v1 submitted 6 September, 2018;
originally announced September 2018.
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Photon-mediated interactions between quantum emitters in a diamond nanocavity
Authors:
Ruffin E. Evans,
Mihir K. Bhaskar,
Denis D. Sukachev,
Christian T. Nguyen,
Alp Sipahigil,
Michael J. Burek,
Bartholomeus Machielse,
Grace H. Zhang,
Alexander S. Zibrov,
Edward Bielejec,
Hongkun Park,
Marko Lončar,
Mikhail D. Lukin
Abstract:
Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode r…
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Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Our experiments pave the way for implementation of cavity-mediated quantum gates between spin qubits and for realization of scalable quantum network nodes.
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Submitted 11 July, 2018;
originally announced July 2018.
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Two-temperature momentum distribution in a Thulium magneto-optical trap
Authors:
E. Kalganova,
O. Prudnikov,
A. Golovizin,
D. Tregubov,
G. Vishnyakova,
D. Sukachev,
K. Khabarova,
V. Sorokin,
N. Kolachevsky
Abstract:
Second-stage laser cooling of thulium atoms at the 530.7 nm transition with a natural linewidth of 350 kHz offers an interesting possibility to study different regimes of a magneto-optical trap (MOT). The intermediate value of the spectral linewidth of the cooling transition allows the observation of three distinct regimes depending on intensity and detuning of the cooling beams. Namely, the "bowl…
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Second-stage laser cooling of thulium atoms at the 530.7 nm transition with a natural linewidth of 350 kHz offers an interesting possibility to study different regimes of a magneto-optical trap (MOT). The intermediate value of the spectral linewidth of the cooling transition allows the observation of three distinct regimes depending on intensity and detuning of the cooling beams. Namely, the "bowl-shaped" regime when light pressure force competes with gravity, the "double structure" regime with interplay between Doppler and polarization-gradient (sub-Doppler) cooling, and the "symmetric" regime when Doppler cooling dominates over sub-Doppler cooling and gravity. The polarization-gradient cooling manifests itself by a two-temperature momentum distribution of atoms resulting in a double-structure of the spatial MOT profile consisting of a cold central fraction surrounded by a hot halo. We studied the "double structure" regime at different saturation parameters and compared observations with calculations based on semiclassical and quantum approaches. The quantum treatment adequately reproduces experimental results if the MOT magnetic field is properly taken into account.
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Submitted 1 October, 2017; v1 submitted 10 July, 2017;
originally announced July 2017.
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Light assisted collisions in ultra-cold Tm atoms
Authors:
Ivan S. Cojocaru,
Sergey V. Pyatchenkov,
Stepan A. Snigirev,
Ilya A. Luchnikov,
Elena S. Kalganova,
Gulnara A. Vishnyakova,
D. N. Kublikova,
V. S. Bushmakin,
E. T. Davletov,
V. V. Tsyganok,
Olesya V. Belyaeva,
Andrei Khoroshilov,
Vadim N. Sorokin,
Denis D. Sukachev,
Aleksey V. Akimov
Abstract:
We studied light assisted collisions of Tm atoms in a magneto optical trap (MOT) for the first time, working on a weak cooling transition at 530.7 nm $(4f^{13}(^2F^0)6s^2,J=7/2,F=4$ to $4f^{12}(^3H_6)5d_{5/2}6s^2,J=9/2,F=5)$. We observed a strong influence from radiation trapping and light assisted collisions on the dynamics of this trap. We carefully separated these two contributions and measured…
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We studied light assisted collisions of Tm atoms in a magneto optical trap (MOT) for the first time, working on a weak cooling transition at 530.7 nm $(4f^{13}(^2F^0)6s^2,J=7/2,F=4$ to $4f^{12}(^3H_6)5d_{5/2}6s^2,J=9/2,F=5)$. We observed a strong influence from radiation trapping and light assisted collisions on the dynamics of this trap. We carefully separated these two contributions and measured the binary loss rate constant at different laser powers and detuning frequencies near the cooling transition. Analyzing losses from the MOT, we found the light assisted inelastic binary loss rate constant to reach values of up to $β=10^{-9}$ cm$^3$/s and gave the upper bound on a branching ratio $k<0.8\times 10^{-6}$ for the 530.7 nm transition.
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Submitted 26 January, 2017;
originally announced January 2017.
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A fiber-coupled diamond quantum nanophotonic interface
Authors:
Michael J. Burek,
Charles Meuwly,
Ruffin E. Evans,
Mihir K. Bhaskar,
Alp Sipahigil,
Srujan Meesala,
Denis D. Sukachev,
Christian T. Nguyen,
Jose L. Pacheco,
Edward Bielejec,
Mikhail D. Lukin,
Marko Lončar
Abstract:
Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power…
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Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power coupling at visible wavelengths. We use this approach to demonstrate a bright source of narrowband single photons, based on a silicon-vacancy color center embedded within a waveguide-coupled diamond photonic crystal cavity. Our fiber-coupled diamond quantum nanophotonic interface results in a high flux of coherent single photons into a single mode fiber, enabling new possibilities for realizing quantum networks that interface multiple emitters, both on-chip and separated by long distances.
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Submitted 29 March, 2017; v1 submitted 15 December, 2016;
originally announced December 2016.
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Quantum Nonlinear Optics with a Germanium-Vacancy Color Center in a Nanoscale Diamond Waveguide
Authors:
Mihir K. Bhaskar,
Denis D. Sukachev,
Alp Sipahigil,
Ruffin E. Evans,
Michael J. Burek,
Christian T. Nguyen,
Lachlan J. Rogers,
Petr Siyushev,
Mathias H. Metsch,
Hongkun Park,
Fedor Jelezko,
Marko Lončar,
Mikhail D. Lukin
Abstract:
We demonstrate a quantum nanophotonics platform based on germanium-vacancy (GeV) color centers in fiber-coupled diamond nanophotonic waveguides. We show that GeV optical transitions have a high quantum efficiency and are nearly lifetime-broadened in such nanophotonic structures. These properties yield an efficient interface between waveguide photons and a single GeV without the use of a cavity or…
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We demonstrate a quantum nanophotonics platform based on germanium-vacancy (GeV) color centers in fiber-coupled diamond nanophotonic waveguides. We show that GeV optical transitions have a high quantum efficiency and are nearly lifetime-broadened in such nanophotonic structures. These properties yield an efficient interface between waveguide photons and a single GeV without the use of a cavity or slow-light waveguide. As a result, a single GeV center reduces waveguide transmission by $18 \pm 1\%$ on resonance in a single pass. We use a nanophotonic interferometer to perform homodyne detection of GeV resonance fluorescence. By probing the photon statistics of the output field, we demonstrate that the GeV-waveguide system is nonlinear at the single-photon level.
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Submitted 31 May, 2017; v1 submitted 9 December, 2016;
originally announced December 2016.
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Improved measurement of the hyperfine structure of the laser cooling level $4f^{12}(^3 H_6)5d_{5/2}6s^2$ $(J=9/2)$ in $^{169}$Tm
Authors:
S. A. Fedorov,
G. A. Vishnyakova,
E. S. Kalganova,
D. D. Sukachev,
A. A. Golovizin,
D. O. Tregubov,
K. Yu. Khabarova,
A. V. Akimov,
N. N. Kolachevsky,
V. N. Sorokin
Abstract:
We report on the improved measurement of the hyperfine structure of $4f^{12}(^3 H_6)5d_{5/2}6s^2$ $(J=9/2)$ excited state in Tm-169 which is involved in the second-stage laser cooling of Tm. To measure the absolute value of the hyperfine splitting interval we used Doppler-free frequency modulation saturated absorption spectroscopy of Tm atoms in a vapor cell. The sign of the hyperfine constant was…
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We report on the improved measurement of the hyperfine structure of $4f^{12}(^3 H_6)5d_{5/2}6s^2$ $(J=9/2)$ excited state in Tm-169 which is involved in the second-stage laser cooling of Tm. To measure the absolute value of the hyperfine splitting interval we used Doppler-free frequency modulation saturated absorption spectroscopy of Tm atoms in a vapor cell. The sign of the hyperfine constant was determined independently by spectroscopy of laser cooled Tm atoms. The hyperfine constant of the level equals $A_J=-422.112(32)$ MHz that corresponds to the energy difference between two hyperfine sublevels of $-2110.56(16)$~MHz. In relation to the saturated absorption measurement we quantitatively treat contributions of various mechanisms into the line broadening and shift. We consider power broadening in the case when Zeeman sublevels of atomic levels are taken into account. We also discuss the line broadening due to frequency modulation and relative intensities of transitions in saturated-absorption experiments.
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Submitted 5 November, 2016;
originally announced November 2016.
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Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
Authors:
Tim Schröder,
Matthew E. Trusheim,
Michael Walsh,
Luozhou Li,
Jiabao Zheng,
Marco Schukraft,
Jose L. Pacheco,
Ryan M. Camacho,
Edward S. Bielejec,
Alp Sipahigil,
Ruffin E. Evans,
Denis D. Sukachev,
Christian T. Nguyen,
Mikhail D. Lukin,
Dirk Englund
Abstract:
The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm…
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The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices.
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Submitted 29 October, 2016;
originally announced October 2016.
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Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System
Authors:
Alp Sipahigil,
Ruffin E. Evans,
Denis D. Sukachev,
Michael J. Burek,
Johannes Borregaard,
Mihir K. Bhaskar,
Christian T. Nguyen,
Jose L. Pacheco,
Haig A. Atikian,
Charles Meuwly,
Ryan M. Camacho,
Fedor Jelezko,
Edward Bielejec,
Hongkun Park,
Marko Lončar,
Mikhail D. Lukin
Abstract:
Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize…
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Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks.
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Submitted 17 August, 2016;
originally announced August 2016.
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Inner-shell magnetic dipole transition in Tm atom as a candidate for optical lattice clocks
Authors:
D. Sukachev,
S. Fedorov,
I. Tolstikhina,
E. Kalganova,
G. Vishnyakova,
K. Khabarova,
D. Tregubov,
A. Golovizin,
V. Sorokin,
N. Kolachevsky
Abstract:
We consider a narrow magneto-dipole transition in the $^{169}$Tm atom at the wavelength of $1.14\,μ$m as a candidate for a 2D optical lattice clock. Calculating dynamic polarizabilities of the two clock levels $[\text{Xe}]4f^{13}6s^2 (J=7/2)$ and $[\text{Xe}]4f^{13}6s^2 (J=5/2)$ in the spectral range from $250\,$nm to $1200\,$nm, we suggest the "magic" wavelength for the optical lattice at…
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We consider a narrow magneto-dipole transition in the $^{169}$Tm atom at the wavelength of $1.14\,μ$m as a candidate for a 2D optical lattice clock. Calculating dynamic polarizabilities of the two clock levels $[\text{Xe}]4f^{13}6s^2 (J=7/2)$ and $[\text{Xe}]4f^{13}6s^2 (J=5/2)$ in the spectral range from $250\,$nm to $1200\,$nm, we suggest the "magic" wavelength for the optical lattice at $807\,$nm. Frequency shifts due to black-body radiation (BBR), the van der Waals interaction, the magnetic dipole-dipole interaction and other effects which can perturb the transition frequency are calculated. The transition at $1.14\,μ$m demonstrates low sensitivity to the BBR shift corresponding to $8\times10^{-17}$ in fractional units at room temperature which makes it an interesting candidate for high-performance optical clocks. The total estimated frequency uncertainty is less than $5 \times 10^{-18}$ in fractional units. By direct excitation of the $1.14\,μ$m transition in Tm atoms loaded into an optical dipole trap, we set the lower limit for the lifetime of the upper clock level $[\text{Xe}]4f^{13}6s^2 (J=5/2)$ of $112\,$ms which corresponds to a natural spectral linewidth narrower than $1.4\,$Hz. The polarizability of the Tm ground state was measured by the excitation of parametric resonances in the optical dipole trap at $532\,$nm.
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Submitted 29 May, 2016;
originally announced May 2016.
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Measurement of the 5D Level Polarizabilty in Laser Cooled Rb atoms
Authors:
S. Snigirev,
A. Golovizin,
D. Tregubov,
S. Pyatchenkov,
D. Sukachev,
A. Akimov,
V. Sorokin,
N. Kolachevsky
Abstract:
We report on accurate measurements of the scalar and tensor polarizabilities of the 5D fine structure levels 5D3/2 and 5D5/2 in Rb. The measured values show reasonable correspondence to previously published theoretical predictions, but are more accurate. We implemented laser excitation of the 5D level in a laser cooled cloud of optically polarized Rb-87 atoms placed in a constant electric field.
We report on accurate measurements of the scalar and tensor polarizabilities of the 5D fine structure levels 5D3/2 and 5D5/2 in Rb. The measured values show reasonable correspondence to previously published theoretical predictions, but are more accurate. We implemented laser excitation of the 5D level in a laser cooled cloud of optically polarized Rb-87 atoms placed in a constant electric field.
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Submitted 16 November, 2013;
originally announced November 2013.
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Magneto-Optical Trap for Thulium Atoms
Authors:
D. Sukachev,
A. Sokolov,
K. Chebakov,
A. Akimov,
S. Kanorsky,
N. Kolachevsky,
V. Sorokin
Abstract:
Thulium atoms are trapped in a magneto-optical trap using a strong transition at 410 nm with a small branching ratio. We trap up to $7\times10^{4}$ atoms at a temperature of 0.8(2) mK after deceleration in a 40 cm long Zeeman slower. Optical leaks from the cooling cycle influence the lifetime of atoms in the MOT which varies between 0.3 -1.5 s in our experiments. The lower limit for the leaking…
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Thulium atoms are trapped in a magneto-optical trap using a strong transition at 410 nm with a small branching ratio. We trap up to $7\times10^{4}$ atoms at a temperature of 0.8(2) mK after deceleration in a 40 cm long Zeeman slower. Optical leaks from the cooling cycle influence the lifetime of atoms in the MOT which varies between 0.3 -1.5 s in our experiments. The lower limit for the leaking rate from the upper cooling level is measured to be 22(6) s$^{-1}$. The repumping laser transferring the atomic population out of the F=3 hyperfine ground-state sublevel gives a 30% increase for the lifetime and the number of atoms in the trap.
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Submitted 29 April, 2010; v1 submitted 3 March, 2010;
originally announced March 2010.
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Zeeman slowing of thulium atoms
Authors:
K. Chebakov,
A. Sokolov,
A. Akimov,
D. Sukachev,
S. Kanorsky,
N. Kolachevsky,
V. Sorokin
Abstract:
We demonstrate laser slowing of a hot thulium atomic beam using the nearly closed cycling transition $4\textrm{f}^{13}6\textrm{s}^2(^2\textrm{F}^\circ)(J=7/2)\leftrightarrow4\textrm{f}^{12}(^3\textrm{H}_5)5\textrm{d}_{3/2}6\textrm{s}^2(J=9/2)$ at 410.6 nm. Atoms are decelerated to velocities around 25 m/s by a 40 cm Zeeman slower. The flux of slowed atoms is evaluated as…
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We demonstrate laser slowing of a hot thulium atomic beam using the nearly closed cycling transition $4\textrm{f}^{13}6\textrm{s}^2(^2\textrm{F}^\circ)(J=7/2)\leftrightarrow4\textrm{f}^{12}(^3\textrm{H}_5)5\textrm{d}_{3/2}6\textrm{s}^2(J=9/2)$ at 410.6 nm. Atoms are decelerated to velocities around 25 m/s by a 40 cm Zeeman slower. The flux of slowed atoms is evaluated as $10^7 \textrm{s}^{-1}\textrm{cm}^{-2}$. The experiment explicitly indicates the possibility of trapping Tm atoms in a magneto-optical trap.
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Submitted 14 May, 2009;
originally announced May 2009.
