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Embrittling bulk metals into hydride in acidic medium
Authors:
Ankang Chen,
Zihao Huo,
Jiewen Liu,
Chuang Liu,
Yongming Sui,
Xuan Liu,
Qingkun Yuan,
Bao Yuan,
Yan Li,
Defang Duan,
Bo Zou
Abstract:
Hydrogen embrittlement (HE), in which the hydrogen infiltrates metal lattices to form hydrides, typically causes catastrophic failure. Inspired by HE effects, we synthesized 18 high-purity metal hydrides (MgH2, ScH2, YH2, LaH2, LaH2.3, SmH2, LuH2, TiH2, δ-ZrH1.6, ε-ZrH2, HfH1.7, HfH2, VH0.8, VH2, NbH, NbH2, Ta2H, and TaH) , using bulk metal foils as precursors and sulfuric/oleic acid as hydrogen d…
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Hydrogen embrittlement (HE), in which the hydrogen infiltrates metal lattices to form hydrides, typically causes catastrophic failure. Inspired by HE effects, we synthesized 18 high-purity metal hydrides (MgH2, ScH2, YH2, LaH2, LaH2.3, SmH2, LuH2, TiH2, δ-ZrH1.6, ε-ZrH2, HfH1.7, HfH2, VH0.8, VH2, NbH, NbH2, Ta2H, and TaH) , using bulk metal foils as precursors and sulfuric/oleic acid as hydrogen donors. Through high-pressure experiments and theoretical calculations, the physical critical pressure (ΔPph) and equivalent pressure (ΔPeq) concept were introduced to elucidate the mechanisms of the synthesizing and stabilizing metal hydrides. Quantitative analysis of 18 metal hydrides establishes that the criterion |ΔPeq| > ΔPph governs HE-driven hydride synthesis. Conversely, when |ΔPeq| < ΔPph , hydrogen-induced brittle fracture initiates. This mechanism enables the synthesis of challenging hydrides (LiH) while concurrently explaining failure modes in metals such as Fe. Our approach successfully converts HE from a primary culprit of material failure to an effective contributor in hydride synthesis.
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Submitted 8 July, 2025; v1 submitted 5 June, 2025;
originally announced June 2025.
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Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector
Authors:
Xiao Tang,
Kuang-Hui Li,
Yue Zhao,
Yanxin Sui,
Huili Liang,
Zeng Liu,
Che-Hao Liao,
Zengxia Mei,
Weihua Tang,
Xiaohang Li
Abstract:
The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. Th…
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The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.
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Submitted 1 August, 2020;
originally announced August 2020.
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Large-area synthesis of continuous two-dimensional MoTexSe2-x alloy films by chemical vapor deposition
Authors:
Shudong Zhao,
Meilin Lu,
Shasha Xue,
Lei Tao,
Yu Sui,
Yang Wang
Abstract:
Great achievements have been made in alloying of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), which can allow tunable band gaps for practical applications in optoelectronic devices. However, telluride-based TMDs alloys were less studied due to the difficulties of sample synthesis. Here, in this work we report the large-area synthesis of 2D MoTexSe2-x alloy films wit…
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Great achievements have been made in alloying of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), which can allow tunable band gaps for practical applications in optoelectronic devices. However, telluride-based TMDs alloys were less studied due to the difficulties of sample synthesis. Here, in this work we report the large-area synthesis of 2D MoTexSe2-x alloy films with controllable Te composition by a modified alkali metal halides assisted chemical vapor deposition method. The as-prepared films have millimeter-scale transverse size. Raman spectra experiments combining calculated Raman spectra and vibrational images obtained by density functional theory (DFT) confirmed the 2H-phase of the MoTexSe2-x alloys. The A1g mode of MoSe2 shows a significant downshift accompanied by asymmetric broadening to lower wavenumber with increasing value of x, while E12g mode seems unchanged, which were well explained by a phonon confinement model. Our work provides a simple method to synthesize large-scale 2H phase Te-based 2D TMDs alloys for their further applications.
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Submitted 23 April, 2019;
originally announced April 2019.
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A Se vacancy induced localized Raman mode in two-dimensional MoSe2 grown by CVD
Authors:
Shudong Zhao,
Meilin Lu,
ShaSha Xue,
Lin Yan,
Peng Miao,
Yan Hang,
Xianjie Wang,
Zhiguo Liu,
Yi Wang,
Lei Tao,
Yu Sui,
Yang Wang
Abstract:
Defects play a significant role in optical properties of semiconducting two-dimensional transition metal dichalcogenides (TMDCs). In ultra-thin MoSe2, a remarkable feature at ~250 cm-1 in Raman spectra is ascribed to be a defect-related mode. Recent attempts failed to explain the origin of this peak, leaving it being a mystery. Here in this work, we demonstrate that this peak is a Se vacancy induc…
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Defects play a significant role in optical properties of semiconducting two-dimensional transition metal dichalcogenides (TMDCs). In ultra-thin MoSe2, a remarkable feature at ~250 cm-1 in Raman spectra is ascribed to be a defect-related mode. Recent attempts failed to explain the origin of this peak, leaving it being a mystery. Here in this work, we demonstrate that this peak is a Se vacancy induced defect mode. Heat effect and hydrogen etching are two main factors to introduce Se vacancies in CVD process of growing MoSe2. A phonon confinement model can well explain the behaviors of intrinsic Raman modes. Density functional theory (DFT) calculation reveals that single Se vacancy (VSe) is responsible for the appearance of Raman peak at ~250 cm-1 and this mode is an A1g-like localized mode which is also confirmed by polarized Raman scattering experiment. The relative strength of this mode can be a characterization of the quality of 2D MoSe2. This work may offer a simple method to tailor chalcogenide vacancies in 2D TMDCs and provide a way to study their vibrational properties.
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Submitted 22 April, 2019;
originally announced April 2019.
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Commissioning of te China-ADS injector-I testing facility
Authors:
Fang Yan,
Huiping Geng,
Cai Meng,
Yaliang Zhao,
Huafu Ouyang,
Shilun Pei,
Rong Liu,
Feisi He,
Tongming Huang,
Rui Ge,
Yanfeng Sui,
Qiang Ye,
Xiaoping Jing,
Fengli Long,
Jungang Li,
Quanling Peng,
Dizhou Guo,
Zusheng Zhou,
Haiyin Lin,
Xinpeng Ma,
Qunyao Wang,
Guangwei Wang,
Hua Shi,
Gang Wu,
Shengchang Wang
, et al. (36 additional authors not shown)
Abstract:
The 10 MeV accelerator-driven subcritical system (ADS) Injector-I test stand at Institute of High Energy Physics (IHEP) is a testing facility dedicated to demonstrate one of the two injector design schemes [Injector Scheme-I, which works at 325 MHz], for the ADS project in China. The Injector adopted a four vane copper structure RFQ with output energy of 3.2 MeV and a superconducting (SC) section…
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The 10 MeV accelerator-driven subcritical system (ADS) Injector-I test stand at Institute of High Energy Physics (IHEP) is a testing facility dedicated to demonstrate one of the two injector design schemes [Injector Scheme-I, which works at 325 MHz], for the ADS project in China. The Injector adopted a four vane copper structure RFQ with output energy of 3.2 MeV and a superconducting (SC) section accommodating fourteen \b{eta}g=0.12 single spoke cavities, fourteen SC solenoids and fourteen cold BPMs. The ion source was installed since April of 2014, periods of commissioning are regularly scheduled between installation phases of the rest of the injector. Continuous wave (CW) beam was shooting through the injector and 10 MeV CW proton beam with average beam current around 2 mA was obtained recently. This contribution describe the results achieved so far and the difficulties encountered in CW commissioning.
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Submitted 15 May, 2017;
originally announced May 2017.
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An Eulerian projection method for quasi-static elastoplasticity
Authors:
Chris H. Rycroft,
Yi Sui,
Eran Bouchbinder
Abstract:
A well-established numerical approach to solve the Navier--Stokes equations for incompressible fluids is Chorin's projection method, whereby the fluid velocity is explicitly updated, and then an elliptic problem for the pressure is solved, which is used to orthogonally project the velocity field to maintain the incompressibility constraint. In this paper, we develop a mathematical correspondence b…
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A well-established numerical approach to solve the Navier--Stokes equations for incompressible fluids is Chorin's projection method, whereby the fluid velocity is explicitly updated, and then an elliptic problem for the pressure is solved, which is used to orthogonally project the velocity field to maintain the incompressibility constraint. In this paper, we develop a mathematical correspondence between Newtonian fluids in the incompressible limit and hypo-elastoplastic solids in the slow, quasi-static limit. Using this correspondence, we formulate a new fixed-grid, Eulerian numerical method for simulating quasi-static hypo-elastoplastic solids, whereby the stress is explicitly updated, and then an elliptic problem for the velocity is solved, which is used to orthogonally project the stress to maintain the quasi-staticity constraint. We develop a finite-difference implementation of the method and apply it to an elasto-viscoplastic model of a bulk metallic glass based on the shear transformation zone theory. We show that in a two-dimensional plane strain simple shear simulation, the method is in quantitative agreement with an explicit method. Like the fluid projection method, it is efficient and numerically robust, making it practical for a wide variety of applications. We also demonstrate that the method can be extended to simulate objects with evolving boundaries. We highlight a number of correspondences between incompressible fluid mechanics and quasi-static elastoplasticity, creating possibilities for translating other numerical methods between the two classes of physical problems.
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Submitted 14 August, 2015; v1 submitted 7 September, 2014;
originally announced September 2014.
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Buoyancy storms in a zonal stream on the polar beta-plane: experiments with altimetry
Authors:
Yi Sui,
Yakov D. Afanasyev
Abstract:
Results from a new series of experiments on flows generated by localized heating in the presence of a background zonal current on the polar beta-plane are presented. The flow induced by a heater without the background zonal flow is in the form of a beta-plume. Zonal jets of alternating directions are formed within the plume. The westward transport velocity in the plume is proportional to the upwel…
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Results from a new series of experiments on flows generated by localized heating in the presence of a background zonal current on the polar beta-plane are presented. The flow induced by a heater without the background zonal flow is in the form of a beta-plume. Zonal jets of alternating directions are formed within the plume. The westward transport velocity in the plume is proportional to the upwelling velocity above the heater in agreement with linear theory. When the background flow in the form of the eastward zonal current is present, the beta-plume can be overwhelmed by the eastward current. The main control parameters of the experiment are the strength of the heater and strength of the sink which is used to create the background flow. The regime diagram shows the area where a beta-plume can exist in the parameter space. The critical value of the velocity of the zonal flow below which the beta-plume can exist is obtained by considering barotropic Rossby waves emitted by the baroclinic eddies in the heated area.
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Submitted 11 April, 2013;
originally announced April 2013.
