Seamless monolithic three-dimensional integration of single-crystalline films by growth
Authors:
Ki Seok Kim,
Seunghwan Seo,
Junyoung Kwon,
Doyoon Lee,
Changhyun Kim,
Jung-El Ryu,
Jekyung Kim,
Min-Kyu Song,
Jun Min Suh,
Hang-Gyo Jung,
Youhwan Jo,
Hogeun Ahn,
Sangho Lee,
Kyeongjae Cho,
Jongwook Jeon,
Minsu Seol,
Jin-Hong Park,
Sang Won Kim,
Jeehwan Kim
Abstract:
The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format, despite encountering significant processing challenges. While monolithic 3D (M3D) integration schemes show promise, the seamless connection of single-crystal…
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The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format, despite encountering significant processing challenges. While monolithic 3D (M3D) integration schemes show promise, the seamless connection of single-crystalline semiconductors without intervening wafers has yet to be demonstrated. This challenge arises from the inherent difficulty of growing single crystals on amorphous or polycrystalline surfaces post the back-end-of-the-line process at low temperatures to preserve the underlying circuitry. Consequently, a practical growth-based solution for M3D of single crystals remains elusive. Here, we present a method for growing single-crystalline channel materials, specifically composed of transition metal dichalcogenides, on amorphous and polycrystalline surfaces at temperatures lower than 400 °C. Building on this developed technique, we demonstrate the seamless monolithic integration of vertical single-crystalline logic transistor arrays. This accomplishment leads to the development of unprecedented vertical CMOS arrays, thereby constructing vertical inverters. Ultimately, this achievement sets the stage to pave the way for M3D integration of various electronic and optoelectronic hardware in the form of single crystals.
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Submitted 6 December, 2023; v1 submitted 5 December, 2023;
originally announced December 2023.
Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy
Authors:
Hyunseok Kim,
Yunpeng Liu,
Kuangye Lu,
Celesta S. Chang,
Kuan Qiao,
Ki Seok Kim,
Bo-In Park,
Junseok Jeong,
Menglin Zhu,
Jun Min Suh,
Yongmin Baek,
You Jin Ji,
Sungsu Kang,
Sangho Lee,
Ne Myo Han,
Chansoo Kim,
Chanyeol Choi,
Xinyuan Zhang,
Haozhe Wang,
Lingping Kong,
Jungwon Park,
Kyusang Lee,
Geun Young Yeom,
Sungkyu Kim,
Jinwoo Hwang
, et al. (4 additional authors not shown)
Abstract:
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to…
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Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.
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Submitted 7 April, 2022;
originally announced April 2022.
