The Impact of Organic Friction Modifiers on Engine Oil Tribofilms
Authors:
Monica Ratoi,
Vlad Bogdan Niste,
Husam Alghawel,
Yat Fan Suen,
Kenneth Nelson
Abstract:
Organic friction modifiers (OFMs) are important additives in the lubrication of machines and especially of car engines where performance improvements are constantly sought-after. Together with zinc dialkyldithiophosphates (ZDDPs) antiwear additives, OFMs have a predominant impact on the tribological behaviour of the lubricant. In the current study, the influence of OFMs on the generation, tribolog…
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Organic friction modifiers (OFMs) are important additives in the lubrication of machines and especially of car engines where performance improvements are constantly sought-after. Together with zinc dialkyldithiophosphates (ZDDPs) antiwear additives, OFMs have a predominant impact on the tribological behaviour of the lubricant. In the current study, the influence of OFMs on the generation, tribological properties and chemistry of ZDDP tribofilms has been investigated by combining tribological experiments (MTM) with in-situ film thickness measurements through optical interference imaging (SLIM), Alicona profilometry and X-ray photoelectron spectroscopy. OFMs and antiwear additives have been found to competitively react/adsorb on the rubbing ferrous substrates in a tribological contact. The formation and removal (through wear) of tribofilms are dynamic processes which result from the simultaneous interaction of these two additives with the surface of the wear track. By carefully selecting the chemistry of OFMs, the formulator can achieve lubricants that generate ZDDP antiwear films of optimum thickness, morphology and friction according to the application-specific requirements.
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Submitted 28 October, 2013;
originally announced October 2013.
Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector
Authors:
J. D. Sun,
H. Qin,
R. A. Lewis,
Y. F. Sun,
X. Y. Zhang,
Y. Cai,
D. M. Wu,
B. S. Zhang
Abstract:
In a GaN/AlGaN field-effect terahertz detector, the directional photocurrent is mapped in the two-dimensional space of the gate voltage and the drain/source bias. It is found that not only the magnitude, but also the polarity, of the photocurrent can be tuned. A quasistatic self-mixing model taking into account the localized terahertz field provides a quantitative description of the detector chara…
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In a GaN/AlGaN field-effect terahertz detector, the directional photocurrent is mapped in the two-dimensional space of the gate voltage and the drain/source bias. It is found that not only the magnitude, but also the polarity, of the photocurrent can be tuned. A quasistatic self-mixing model taking into account the localized terahertz field provides a quantitative description of the detector characteristics. Strongly localized self-mixing is confirmed. It is therefore important to engineer the spatial distribution of the terahertz field and its coupling to the field-effect channel on the sub-micron scale.
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Submitted 7 March, 2012;
originally announced March 2012.
