Showing 1–2 of 2 results for author: Sudarshan, T

Graphene to Graphane: Novel Electrochemical Conversion

Authors: Kevin M. Daniels, B. Daas, R. Zhang, I. Chowdhury, A. Obe, J. Weidner, C. Williams, T. S. Sudarshan, MVS Chandrashekhar

Abstract: A novel electrochemical means to generate atomic hydrogen, simplifying the synthesis and controllability of graphane formation on graphene is presented. High quality, vacuum grown epitaxial graphene (EG) was used as starting material for graphane conversion. A home-built electrochemical cell with Pt wire and exposed graphene as the anode and cathode, respectively, was used to attract H+ ions to re… ▽ More A novel electrochemical means to generate atomic hydrogen, simplifying the synthesis and controllability of graphane formation on graphene is presented. High quality, vacuum grown epitaxial graphene (EG) was used as starting material for graphane conversion. A home-built electrochemical cell with Pt wire and exposed graphene as the anode and cathode, respectively, was used to attract H+ ions to react with the exposed graphene. Cyclic voltammetry of the cell revealed the potential of the conversion reaction as well as oxidation and reduction peaks, suggesting the possibility of electrochemically reversible hydrogenation. A sharp increase in D peak in the Raman spectra of EG, increase of D/G ratio, introduction of a peak at ~2930 cm-1 and respective peak shifts as well as a sharp increase in resistance showed the successful hydrogenation of EG. This conversion was distinguished from lattice damage by thermal reversal back to graphene at 1000°C. △ Less

Submitted 26 October, 2010; originally announced October 2010.

Comments: 18 pages, 8 figures, 1 table, revised version submitted to the Journal of Electronic Materials

Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC

Authors: B. K. Daas, K. M. Daniels, T. S. Sudarshan, M. V. S. Chandrashekhar

Abstract: We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short… ▽ More We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-field optical devices such as superlenses. △ Less

Submitted 27 October, 2010; v1 submitted 19 October, 2010; originally announced October 2010.

Comments: 11 pages and 10 figures. Submitted to Nano-Letters