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The Potential of Geminate Pairs in Lead Halide Perovskite revealed via Time-resolved Photoluminescence
Authors:
Hannes Hempel,
Martin Stolterfoht,
Orestis Karalis,
Thomas Unold
Abstract:
Photoluminescence (PL) under continuous illumination is commonly employed to assess voltage losses in solar energy conversion materials. However, the early temporal evolution of these losses remains poorly understood. Therefore, we extend the methodology to time-resolved PL, introducing the concepts of geminate PL, doping PL, and sibling PL to quantify the transient chemical potential of photogene…
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Photoluminescence (PL) under continuous illumination is commonly employed to assess voltage losses in solar energy conversion materials. However, the early temporal evolution of these losses remains poorly understood. Therefore, we extend the methodology to time-resolved PL, introducing the concepts of geminate PL, doping PL, and sibling PL to quantify the transient chemical potential of photogenerated electron-hole pairs and key optoelectronic properties. Analyzing the initial PL amplitudes reveals hot charge carrier separation for around 100 nm and is likely limited by the grain size of the triple cation perovskite. The following PL decay is caused by the diffusive separation of non-excitonic geminate pairs and time-resolves a fundamental yet often overlooked energy loss by increasing entropy. For triple-cation halide perovskite, we measure a "geminate correlation energy" of up to 90 meV, persisting for ~ten nanoseconds. This energy is unutilized in standard solar cells and is considered lost in the Shockley-Queisser model. Therefore, this geminate energy could substantially enhance the device's efficiency, particularly under maximum power point and low-illumination conditions.
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Submitted 10 September, 2024;
originally announced September 2024.
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Enhanced Electron Extraction in Co-Doped TiO2 Quantified by Drift-Diffusion Simulation for Stable CsPbI3 Solar Cells
Authors:
Thomas W. Gries,
Davide Regaldo,
Hans Koebler,
Titan Noor Hartono Putri,
Gennaro V. Sannino,
Emilio Gutierrez Partida,
Roberto Felix,
Elif Huesam,
Ahmed Saleh,
Regan G. Wilks,
Zafar Iqbal,
Zahra Loghman Nia,
Florian Ruske,
Martin Stolterfoht,
Dieter Neher,
Marcus Baer,
Stefan A. Weber,
Paola Delli Veneri,
Philip Schulz,
Jean-Baptiste Puel,
Jean-Paul Kleider,
Qiong Wang,
Eva Unger,
Artem Musiienko,
Antonio Abate
Abstract:
Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic prop…
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Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic properties of (doped) TiO2 as an electron-selective contact. We show via KPFM that co-doping of TiO2 with Nb(V) and Sn(IV) reduces the materials work function by 270 meV, giving it stronger n-type characteristics compared to Nb(V) mono-doped TiO2. The altered electronic alignment with CsPbI3 translates to enhanced electron extraction, as demonstrated with ssPL, trPL and trSPV in triad. Importantly, we extract crucial parameters, such as the concentration of extracted electrons and the interface hole recombination velocity, from the SPV transients via 2D drift-diffusion simulations. When implementing the co-doped TiO2 into full n-i-p solar cells, the operational stability is enhanced to 32000 h of projected TS80 lifetime. This study provides fundamental understanding of interfacial charge extraction and its correlation with operational stability of perovskite solar cells, which can be transferred to other charge-selective contacts.
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Submitted 24 April, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Interface Modification for Energy Levels Alignment and Charge Extraction in CsPbI$_3$ Perovskite Solar Cells
Authors:
Zafar Iqbal,
Fengshuo Zu,
Artem Musiienko,
Emilio Gutierrez Partida,
Hans Kobler,
Thomas W. Gries,
Gennaro V. Sannino,
Laura Canil,
Norbert Koch,
Martin Stolterfoht,
Dieter Neher,
Michele Pavone,
Ana Belen Munoz-Garcia,
Antonio Abate,
Qiong Wang
Abstract:
In perovskite solar cells (PSCs) energy levels alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI$_3$ perovskite and its hole selective contact (Spiro-OMeTAD), realized by a dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a pas…
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In perovskite solar cells (PSCs) energy levels alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI$_3$ perovskite and its hole selective contact (Spiro-OMeTAD), realized by a dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a passivated perovskite film, by n-Octyl ammonium Iodide (OAI), we created an upward surface band-bending at the interface by TOPO treatment. This improved interface by the dipole molecule induces a better energy level alignment and enhances the charge extraction of holes from the perovskite layer to the hole transport material. Consequently, a Voc of 1.2 V and high-power conversion efficiency (PCE) of over 19% were achieved for inorganic CsPbI$_3$ perovskite solar cells. Further, to demonstrate the effect of the TOPO dipole molecule, we present a layer-by-layer charge extraction study by transient surface photovoltage technique (trSPV) accomplished by charge transport simulation.
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Submitted 24 July, 2023;
originally announced July 2023.
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High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell
Authors:
Huagui Lai,
Jincheng Luo,
Yannick Zwirner,
Selina Olthof,
Alexander Wieczorek,
Fangyuan Ye,
Quentin Jeangros,
Xinxing Yin,
Fatima Akhundova,
Tianshu Ma,
Rui He,
Radha K. Kothandaraman,
Xinyu Chin,
Evgeniia Gilshtein,
André Müller,
Changlei Wang,
Jarla Thiesbrummel,
Sebastian Siol,
José Márquez Prieto,
Thomas Unold,
Martin Stolterfoht,
Cong Chen,
Ayodhya N. Tiwari,
Dewei Zhao,
Fan Fu
Abstract:
Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterp…
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Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterparts primarily due to the challenges in developing efficient wide-bandgap (WBG) perovskite solar cells on the flexible substrates as well as the low open-circuit voltage (VOC) in the WBG perovskite subcell. Here, we report that the use of self-assembled monolayers as hole-selective contact effectively suppresses the interfacial recombination and allows the subsequent uniform growth of a 1.77 eV WBG perovskite with superior optoelectronic quality. In addition, we employ a post-deposition treatment with 2-thiopheneethylammonium chloride to further suppress the bulk and interfacial recombination, boosting the VOC of the WBG top cell to 1.29 V. Based on this, we present the first proof-of-concept four-terminal all-perovskite flexible TSC with a PCE of 22.6%. When integrating into two-terminal flexible tandems, we achieved 23.8% flexible all-perovskite TSCs with a superior VOC of 2.1 V, which is on par with the VOC reported on the 28% all-perovskite tandems grown on the rigid substrate.
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Submitted 25 July, 2022;
originally announced July 2022.
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Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics
Authors:
Jarla Thiesbrummel,
Francisco Peña-Camargo,
Kai Oliver Brinkmann,
Emilio Gutierrez-Partida,
Fengjiu Yang,
Jonathan Warby,
Steve Albrecht,
Dieter Neher,
Thomas Riedl,
Henry J. Snaith,
Martin Stolterfoht,
Felix Lang
Abstract:
All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will ac…
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All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will accelerate advancement. Here, we perform extensive selective characterization of the individual sub-cells to disentangle the different losses and limiting factors in these tandem devices. We find that non-radiative losses in the high-gap subcell dominate the overall recombination losses in our baseline system as well as in the majority of literature reports. We consecutively improve the high-gap perovskite subcell through a multi-faceted approach, allowing us to enhance the open-circuit voltage ($V_{OC}$) of the subcell by up to 120 mV. Due to the (quasi) lossless indium oxide interconnect which we employ for the first time in all-perovskite tandems, the $V_{OC}$ improvements achieved in the high-gap perovskites translate directly to improved all-perovskite tandem solar cells with a champion $V_{OC}$ of 2.00 V and a stabilized efficiency of 23.7%. The efficiency potential of our optimized all-perovskite tandems reaches 25.2% and 27.0% when determined from electro- and photo-luminescence respectively, indicating significant transport losses as well as imperfect energy-alignment between the perovskite and the transport layers in the experimental devices. Further improvements to 28.4% are possible considering the bulk quality of both absorbers measured using photo-luminescence on isolated perovskite layers. Our insights therefore not only show an optimization example but a generalizable evidence-based strategy for optimization utilizing optical sub-cell characterization.
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Submitted 20 July, 2022;
originally announced July 2022.
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Revealing the doping density in perovskite solar cells and its impact on device performance
Authors:
Francisco Peña-Camargo,
Jarla Thiesbrummel,
Hannes Hempel,
Artem Musiienko,
Vincent M. Le Corre,
Jonas Diekmann,
Jonathan Warby,
Thomas Unold,
Felix Lang,
Dieter Neher,
Martin Stolterfoht
Abstract:
Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical…
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Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterisation techniques comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the charge on the electrodes per unit volume at short-circuit conditions, which amounts to roughly $10^{16}$ cm$^{-3}$. This figure equals the product of the capacitance $C$ and the built-in potential $V_\mathrm{bi}$ and represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results demonstrate consistently that the doping density is below this critical threshold ($<10^{12}$ cm$^{-3}$ which means $<CV_\mathrm{bi}$ per unit volume) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations which confirm that the device performance is not affected by such low doping densities.
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Submitted 14 January, 2022;
originally announced January 2022.
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Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions
Authors:
Jonas Diekmann,
Pietro Caprioglio,
Moritz H. Futscher,
Vincent M. Le Corre,
Sebastian Reichert,
Frank Jaiser,
Malavika Arvind,
Lorena Perdigon Toro,
Emilio Gutierrez-Partida,
Francisco Pena-Camargo,
Carsten Deibel,
Bruno Ehrler,
Thomas Unold,
Thomas Kirchartz,
Dieter Neher,
Martin Stolterfoht
Abstract:
Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline silicon cells are not well understood. Here, we establish a simulation model that well describes efficient p-i-n type perovskite solar cells and a range of different…
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Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline silicon cells are not well understood. Here, we establish a simulation model that well describes efficient p-i-n type perovskite solar cells and a range of different experiments. We then study important device and material parameters and we find that an efficiency regime of 30% can be unlocked by optimizing the built-in potential across the perovskite layer by using either highly doped (10^19 cm-3), thick transport layers (TLs) or ultrathin undoped TLs, e.g. self-assembled monolayers. Importantly, we only consider parameters that have been already demonstrated in recent literature, that is a bulk lifetime of 10 us, interfacial recombination velocities of 10 cm/s, a perovskite bandgap of 1.5 eV and an EQE of 95%. A maximum efficiency of 31% is predicted for a bandgap of 1.4 eV. Finally, we demonstrate that the relatively high mobile ion density does not represent a significant barrier to reach this efficiency regime. Thus, the results of this paper promise continuous PCE improvements until perovskites may become the most efficient single-junction solar cell technology in the near future.
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Submitted 25 April, 2021; v1 submitted 16 October, 2019;
originally announced October 2019.
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High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition
Authors:
Pietro Caprioglio,
Fengshuo Zu,
Christian M. Wolff,
José A. Márquez Prieto,
Martin Stolterfoht,
Norbert Koch,
Thomas Unold,
Bernd Rech,
Steve Albrecht,
Dieter Neher
Abstract:
The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via transient and absolute photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the nea…
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The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via transient and absolute photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer and specifically at the perovskite/C60 interface. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C60 electron-transporting layer. The resulting solar cells exhibited a Voc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, bringing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3%. Our results demonstrate very high Voc values and efficiencies in Sr-containing quadruple cation perovskite pin solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.
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Submitted 29 October, 2018;
originally announced October 2018.
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The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells
Authors:
Martin Stolterfoht,
Pietro Caprioglio,
Christian M. Wolff,
José A. Márquez,
Joleik Nordmann,
Shanshan Zhang,
Daniel Rothhardt,
Ulrich Hörmann,
Alex Redinger,
Lukas Kegelmann,
Steve Albrecht,
Thomas Kirchartz,
Michael Saliba,
Thomas Unold,
Dieter Neher
Abstract:
Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. B…
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Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces.
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Submitted 22 October, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
