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Roadmap on Atomic-scale Semiconductor Devices
Authors:
Steven R. Schofield,
Andrew J. Fisher,
Eran Ginossar,
Joseph W. Lyding,
Richard Silver,
Fan Fei,
Pradeep Namboodiri,
Jonathan Wyrick,
M. G. Masteghin,
D. C. Cox,
B. N. Murdin,
S. K Clowes,
Joris G. Keizer,
Michelle Y. Simmons,
Holly G. Stemp,
Andrea Morello,
Benoit Voisin,
Sven Rogge,
Robert A. Wolkow,
Lucian Livadaru,
Jason Pitters,
Taylor J. Z. Stock,
Neil J. Curson,
Robert E. Butera,
Tatiana V. Pavlova
, et al. (25 additional authors not shown)
Abstract:
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum dev…
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Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.
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Submitted 22 January, 2025; v1 submitted 8 January, 2025;
originally announced January 2025.
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Resistless EUV lithography: photon-induced oxide patterning on silicon
Authors:
Li-Ting Tseng,
Prajith Karadan,
Dimitrios Kazazis,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Neil J. Curson,
Steven R. Schofield,
Matthias Muntwiler,
Gabriel Aeppli,
Yasin Ekinci
Abstract:
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons ca…
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In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially H-terminated Si surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the H-desorption in scanning tunneling microscopy-based lithography. We achieve SiO2/Si gratings with 75 nm half-pitch and 31 nm height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nm-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.
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Submitted 2 October, 2023;
originally announced October 2023.
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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Authors:
Taylor J. Z. Stock,
Oliver Warschkow,
Procopios C. Constantinou,
Juerong Li,
Sarah Fearn,
Eleanor Crane,
Emily V. S. Hofmann,
Alexander Kölker,
David R. McKenzie,
Steven R. Schofield,
Neil J. Curson
Abstract:
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen re…
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Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique. The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored. In this work, we demonstrate successful fabrication of atomic-scale structures of arsenic-in-silicon. Using a scanning tunneling microscope tip, we pattern a monolayer hydrogen mask to selectively place arsenic atoms on the Si(001) surface using arsine as the precursor molecule. We fully elucidate the surface chemistry and reaction pathways of arsine on Si(001), revealing significant differences to phosphine. We explain how these differences result in enhanced surface immobilization and in-plane confinement of arsenic compared to phosphorus, and a dose-rate independent arsenic saturation density of $0.24{\pm}0.04$ ML. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer improvement in out-of-plane confinement compared to similarly prepared phosphorus layers, while still retaining >80% carrier activation and sheet resistances of $<2 kΩ/{\square}$. These excellent characteristics of arsenic represent opportunities to enhance existing capabilities of atomic-scale fabrication of dopant structures in silicon, and are particularly important for three-dimensional devices, where vertical control of the position of device components is critical.
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Submitted 15 October, 2019;
originally announced October 2019.
