Showing 1–2 of 2 results for author: Stifutkin, A

Radiation damage uniformity in a SiPM

Authors: O. Bychkova, E. Garutti, E. Popova, A. Stifutkin, S. Martens, P. Parygin, A. Kaminsky, J. Schwandt

Abstract: A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $Φ$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $μ$m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage unifo… ▽ More A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $Φ$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $μ$m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to $U_\mathit{ov}$ = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements $U^{IV}_\mathit{bd}$ was extracted and compared to that of the breakdown voltage from the gain measurements $U^{G}_\mathit{bd}$. △ Less

Submitted 2 May, 2022; originally announced May 2022.

Comments: arXiv admin note: text overlap with arXiv:2111.00483

Radiation hardness study using SiPMs with single-cell readout

Authors: E. Garutti, E. Popova, P. Parygin, O. Bychkova, A. Kaminsky, S. Martens, J. Schwandt, A. Stifutkin

Abstract: A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $Φ$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $μ$m. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of $V_{off}$ by $\approx$0.5 V is obser… ▽ More A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $Φ$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $μ$m. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of $V_{off}$ by $\approx$0.5 V is observed after $Φ$ = 5e13 cm$^{-2}$. △ Less

Submitted 31 October, 2021; originally announced November 2021.

Comments: 6 pages, 11 figures